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A simple laser based process for the formation of a LBSF for n-type silicon solar cells

: Jäger, U.; Suwito, D.; Benick, J.; Janz, S.; Hermle, M.; Glunz, S.W.; Preu, R.

Volltext urn:nbn:de:0011-n-1564212 (239 KByte PDF)
MD5 Fingerprint: f6bbf5f3c8a3e820c4ebf5aa6931caca
Erstellt am: 10.8.2012

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
München: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
PV Produktionstechnologie und Qualitätssicherung; Silicium-Photovoltaik; Pilotherstellung von industrienahen Solarzellen; Messtechnik und Produktionskontrolle; Industrielle und neuartige Solarzellenstrukturen; Produktionsanlagen und Prozessentwicklung

We present a simple laser process for the formation of a local back surface field (LBSF) for n-type silicon solar cells. Point contacts are formed by applying a laser process to a doped, passivating layer of amorphous silicon carbide (PassDop layer). In a single processing step, point contacts are opened and local doping of the underlying silicon is done. A variation in dopant content and laser fluency enables the control of the doping profile. The effectiveness of the LBSF structure is investigated on lifetime samples. We find that high dopant content of the PassDop layer and medium laser fluencies yield best values for the suppression of the recombination at the contact.