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Very low emitter saturation current densities on ion implanted boron emitters

: Benick, J.; Bateman, N.; Hermle, M.

Volltext urn:nbn:de:0011-n-1557006 (384 KByte PDF)
MD5 Fingerprint: 97208e72570fc99e77b8389fcd5ab117
Erstellt am: 20.12.2014

European Commission:
25th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2010. Proceedings : 5th World Conference on Photovoltaic Energy Conversion, 6-10 , September 2010, Valencia, Spain
M√ľnchen: WIP-Renewable Energies, 2010
ISBN: 3-936338-26-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <25, 2010, Valencia>
World Conference on Photovoltaic Energy Conversion <5, 2010, Valencia>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()
Solarzellen - Entwicklung und Charakterisierung; Silicium-Photovoltaik; Dotierung und Diffusion; Industrielle und neuartige Solarzellenstrukturen; Produktionsanlagen und Prozessentwicklung

Ion implantation is the technique of choice for introducing dopant species into semiconductors in CMOS devices. In photovoltaics ion implantation could be an interesting alternative to tube furnace diffusion processes. However, one issue of major importance concerning ion implantation always is the removal of the damage introduced by the implantation process as solar cells always require a defect free, perfectly passivated surface. Thus the surface quality and passivation of boron and phosphorus implanted samples was investigated within this work. It has been found that after an appropriate annealing the introduced damage of both boron and phosphorus implanted surfaces can be completely removed. Very low saturation current densities of <25 fA/cm2 could be achieved for both boron and phosphorus implanted surfaces after passivation with Al2O3 and SiO2 respectively. On n-type back junction solar cells were both the phosphorus FSF as well as the boron emitter have been realized by ion implantation conversion efficiencies up to 19.4% could be achieved.