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Comprehensive study of different PECVD-deposition methods for deposition of thin intrinsic amorphous silicon for heterojunction solar cells

: Pysch, D.; Bivour, M.; Zimmermann, K.; Schetter, C.; Hermle, M.; Glunz, S.

Volltext urn:nbn:de:0011-n-1435899 (496 KByte PDF)
MD5 Fingerprint: 53f942e19eadb587d5027a07c659a35e
Erstellt am: 11.8.2012

Sinke, W. ; WIP - Renewable Energies, München; European Commission; UNESCO; World Council for Renewable Energy; International Photovoltaic Equipment Association:
24th European Photovoltaic Solar Energy Conference 2009. CD-ROM : The compiled State-of-the-Art of PV Solar Technology and Deployment. Proceedings of the International Conference held in Hamburg, 21-25 September 2009
München, 2009
ISBN: 3-936338-25-6
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <24, 2009, Hamburg>
Konferenzbeitrag, Elektronische Publikation
Fraunhofer ISE ()

This work tackles the question whether a soft PECVD-deposition of intrinsic, hydrogenised, amorphous silicon (a-Si:H(i)) is really supportive for the passivation quality of the heterojunction interface between a crystalline wafer and the a-Si:H(i)-layer itself. Two PECVD-deposition methods are under investigation: i) parallel plate 13.5 MHz deposition chamber (PP-13.5 MHz), and ii) an inductively coupled plasma deposition chamber (ICP). The time dependent degradation and the thickness dependence of the passivation quality of the a-Si:H(i)- layers are discussed as an important fact to note, when the work aims to compare different a-Si:H(i)-layer deposition techniques and/or deposition parameter sets. The two different PECVD a-Si:H(i) deposition techniques are optimized and compared with the goal to find the highest possible passivation quality while reducing the layer thickness below 10 nm.