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Ion implantation into nanoparticulate functional layers

: Walther, S.; Jank, M.P.M.; Ebbers, A.; Ryssel, H.

Fulltext urn:nbn:de:0011-n-931642 (3.5 MByte PDF)
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Copyright AIP
Created on: 7.4.2009

Seebauer, E.G.:
Ion implantation technology 2008. 17th International Conference on Ion Implantation Technology, IIT 2008 : Monterey, California, 8 - 13 June 2008
Melville/NY: AIP Press, 2008 (AIP Conference Proceedings 1066)
ISBN: 978-0-7354-0597-4
ISSN: 0094-243X
International Conference on Ion Implantation Technology (IIT) <17, 2008, Monterey/Calif.>
Conference Paper, Electronic Publication
Fraunhofer IISB ()
printable electronic; silicon nanoparticle; ion implantation

Layers of silicon nanoparticles with resistivity down to 10 mΩcm are demonstrated using chemical and thermal treatment as well as ion implantation. Morphology and crystallinity of the layers are characterized using AFM and XRD. After chemical and thermal treatment AFM measurement revealed a fine grain structure, where the grains are of good crystallinity as measured by XRD. Implantation of 5.1015 cm-2 arsenic at 100 keV yields partially amorphous layers that can be recrystallized by post implantation anneal. By this process, surface roughness of layers increases as grain growth takes place.