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Titanium-related defect levels in silicon analyzed by temperature-dependent photoluminescence lifetime spectroscopy

: Roth, T.; Rüdiger, M.; Trupke, T.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-898286 (690 KByte PDF)
MD5 Fingerprint: 08735636c2bcb0eedaf96c559277942f
Created on: 21.9.2012

IEEE Electron Devices Society:
33rd IEEE Photovolatic Specialists Conference, PVSC 2008. Proceedings. Vol.2 : San Diego, CA, May 11 - 16, 2008
Piscataway, NJ: IEEE, 2008
ISBN: 978-1-4244-1640-0
ISBN: 978-1-4244-1641-7
ISBN: 1-4244-1640-X
Photovoltaic Specialists Conference (PVSC) <33, 2008, San Diego/Calif.>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Temperature-dependent lifetime spectroscopy allows for the determination of defect parameters (like ratio of the carrier capture cross sections and energy level) of pointlike defects in silicon. This necessitates reliable measurements of the low-level injection excess carrier lifetime. Photoluminescence-based measurement techniques have been shown to be ideal for this kind of measurements at room temperature, being immune to several measurement artifacts like minority carrier trapping or depletion region modulation. In this contribution it will be shown how the effect of photon reabsorption influences the temperaturedependent photoluminescence measurements and how this can be accounted for using a theoretical model based on the generalized Planck equation. An intentionally titanium- contaminated silicon sample is used to demonstrate this significant effect experimentally. Defect parameters of two independent recombination centers will be presented, which titanium introduces into the silicon band gap.