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Progress in advanced metallization technology at Fraunhofer ISE

: Glunz, S.W.; Aleman, M.; Bartsch, J.; Bay, N.; Bayer, K.; Bergander, R.; Filipovic, A.; Greil, S.; Grohe, A.; Hörteis, M.; Knorz, A.; Menkö, M.; Mette, A.; Pysch, D.; Radtke, V.; Richter, P.; Rudolph, D.; Rublack, T.; Schetter, C.; Schmidt, D.; Schultz, O.; Woehl, R.

Fulltext urn:nbn:de:0011-n-898166 (603 KByte PDF)
MD5 Fingerprint: 4688142a796196f03d6530ce354f379d
Created on: 17.11.2012

IEEE Electron Devices Society:
33rd IEEE Photovolatic Specialists Conference, PVSC 2008. Proceedings. Vol.4 : San Diego, CA, May 11 - 16, 2008
Piscataway, NJ: IEEE, 2008
ISBN: 978-1-4244-1640-0
ISBN: 978-1-4244-1641-7
ISBN: 1-4244-1640-X
Photovoltaic Specialists Conference (PVSC) <33, 2008, San Diego/Calif.>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Fraunhofer ISE's concept for an advanced metallization of silicon solar cells is based on a two-step process: the deposition of a seed layer to form a mechanical and electrical contact and the subsequent thickening of this seed layer by a plating step, preferably by light-induced plating (LIP). The concept of a multi-layer metallization is used for most of the relevant high-efficiency cell types in industry. The main advantage of this concept is that each layer can be optimized individually, i.e. the seed layer to achieve an optimal electrical and mechanical contact and the plated layer in terms of high lateral conductivity and good solderability. Solar cells results with seed layers fabricated by aerosol printing, chemical Ni plating on cells with a laser-structured dielectric layer and laser-enhanced Ni plating are presented.