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Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition

Selbstjustierendes Wachstum organometallischer Schichten für nichtflüchige Speicherzellen: Vergleich von Flüssigphasen- und Dampfphasenabscheidung
: Erlbacher, T.; Jank, M.P.M.; Ryssel, H.; Frey, L.; Engl, R.; Walter, A.; Sezi, R.; Dehm, C.

Preprint urn:nbn:de:0011-n-820634 (3.8 MByte PDF)
MD5 Fingerprint: 422818a5489150f5d43c318047d2d4ea
Created on: 18.2.2009

Journal of the Electrochemical Society 155 (2008), No.9, pp.H693-H697
ISSN: 0013-4651
ISSN: 1945-7111
ISSN: 0096-4786
Journal Article, Electronic Publication
Fraunhofer IISB ()
non-volatile memory; organometallic layer; vapor phase deposition

Deposition methods for the self-aligned growth of organometallic charge-transfer complexes for use as a conductivity-modulated, nonvolatile switching layer are presented. First, a deposition from liquid phase is investigated and a model for film growth is derived. Then, a deposition technique for charge-transfer complexes, namely selective organic vapor-phase deposition, is introduced which excels in selectivity and homogeneity. In particular, silicon dioxide layers exposed to the precursor molecules during processing remain completely uncovered, whereas copper pads in contact holes are rapidly filled with the desired layer of the charge-transfer complex. Then, both deposition methods are compared regarding reproducibility, selectivity, homogeneity, and the ability to selectively grow thin films in small structures with diameters below 200 nm. Finally, electrical switching properties are investigated and the switching mechanism for the present charge-transfer complex is discussed.