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Detailed arsenic concentration profiles at Si/SiO2 interfaces

Genaue Arsen-Konzentrationsprofile an Si/SiO2 Grenzschichten
: Pei, L.; Duscher, G.; Steen, C.; Pichler, P.; Ryssel, H.; Napolitani, E.; Salvador, D. de; Piro, A.M.; Terrasi, A.; Severac, F.; Cristiano, F.; Ravichandran, K.; Gupta, N.; Windl, W.

Postprint urn:nbn:de:0011-n-780127 (858 KByte PDF)
MD5 Fingerprint: 0dde3451a674097ef717e717fe4084f8
Copyright AIP
Created on: 28.8.2008

Journal of applied physics 104 (2008), No.4, Art. 043507, 11 pp.
ISSN: 0021-8979
ISSN: 1089-7550
Journal Article, Electronic Publication
Fraunhofer IISB ()
arsenic; interface; pile-up; segregation; silicon; characterization; EELS; txrf

The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI- XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be ~1x10(exp 15) cm-2 for an implanted dose of 1x10(exp 16) cm-2 with a maximum concentration of ~10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects.