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Spatially resolved luminescence spectroscopy on multicrystalline silicon

: Schubert, M.C.; Gundel, P.; The, M.; Warta, W.; Romero, M.J.; Ostapenko, S.; Arguirov, T.

Fulltext urn:nbn:de:0011-n-2098850 (321 KByte PDF)
MD5 Fingerprint: e70db8e73031dd5afc32886770788a38
Created on: 21.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
M√ľnchen: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Luminescence spectroscopy is applied to multicrystalline p-type silicon. Photoluminescence spectroscopy, cathodoluminescence spectrum imaging, and defect luminescence imaging are used for the characterisation at temperatures from 21 K to 300 K. A defect line, persistent up to ambient temperature, was found in the photoluminescence spectrum of highly defective areas of the silicon samples under test. The line was associated with the dislocation characteristic emission and identified as the D2' band. Temperature dependent analysis of the peak position and peak intensity together with the application of a theoretical description of the thermal deactivation process of the luminescence transitions are used to estimate the energy positions of the involved defects.