Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.

Towards 20% efficient n-type silicon solar cells with screen-printed aluminium-alloyed rear emitter

: Schmiga, C.; Hermle, M.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-2098708 (282 KByte PDF)
MD5 Fingerprint: 872af3245479b727890ecb54d659a9dd
Created on: 21.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

We present n-type silicon solar cells featuring an effectively passivated full-area screen-printed aluminium-alloyed rear emitter. Two different passivation stacks for Al-p+ emitters are investigated: The first one consists of a plasma-enhanced-chemical-vapour-deposited amorphous silicon film covered by a plasma silicon oxide layer, the second one of a plasma-assisted atomic-layer-deposited aluminium oxide also covered by a plasma silicon oxide. For our a-Si/SiOx-passivated back junction n+np+ solar cells (4 cm2) we achieve an increase in the open-circuit voltage of 15â 20 mV compared to the non-passivated emitter cells, for our Al2O3/SiOx-passivated cells the shift amounts to 25â 30 mV, resulting in Voc values up to 655 mV. This leads to record-high efficiencies for solar cells with aluminium-doped emitter of 19.5 % and 20.1 %, respectively, on n-type phosphorus-doped 10 Îcm float-zone silicon material.