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Temperature-dependent quasi-steady-state photoluminescence lifetime measurements for defect spectroscopy

: Rüdiger, M.; Roth, T.; Warta, W.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-2098532 (576 KByte PDF)
MD5 Fingerprint: 9147f5ba19b965cead48ef7e74497857
Created on: 21.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Temperature and injection-dependent lifetime measurements of the effective excess carrier lifetime of crystalline silicon enable the determination of characteristic defect parameters like the energetic defect level and the ratio of the capture cross sections of electrons and holes. Since the effect of temperature-dependent photon reabsorption on quasi-steady-state photoluminescence lifetime measurements can be accounted for, this method is well suited to provide data for the spectroscopic analysis of defects in crystalline silicon. In contradiction to other techniques to determine the injection-dependent lifetime like photoconductance measurements, quasi-steady-state photoluminescence stands out for the robustness against parasitic artifacts like depletion region modulation and trapping, which makes it an ideal tool for the purposes of defect spectroscopy. In this work the capability and reproducibility of the determination of defect parameters of titanium contaminated crystalline silicon samples with different doping and defect concentrations will be shown and results will be presented.