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Spectral ellipsometry analysis of ultrathin amorphous silicon layers

: Richter, A.; Benick, J.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-2098281 (566 KByte PDF)
MD5 Fingerprint: 624a875a66ae613ce81bbf40e810525a
Created on: 21.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Ultrathin layers of hydrogenated amorphous silicon (a-Si:H) are of high interest in todayâ s photovoltaics. A reliable characterization (layer thickness, optical constants) of such layers is essential for process control and development. Spectral ellipsometry is a fast and non-destructive method for analyzing thin layers. A common analysis procedure for ellipsometric data fails in case of ultrathin a-Si:H layers with thicknesses below 15 nm. For evaluation of such a-Si:H layers a new analysis procedure has been introduced. The procedure has been applied successfully to layers of a thickness down to 5 nm, verified by reflection and transmission measurements as well as transmission electron microscopy.