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Rear-side contact structure for epitaxy wrap-through silicon thin-film solar cells

 
: Mitchell, E.J.; Künle, M.; Kwiatkowska, M.; Janz, S.; Reber, S.

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Fulltext urn:nbn:de:0011-n-2097458 (396 KByte PDF)
MD5 Fingerprint: f1af35f014f158158f30f79c6bec7cdb
Created on: 6.9.2012


Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
pp.2212-2216
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Abstract
The Epitaxy Wrap-Through (EpiWT) cell is a rear contact version of the Epitaxial Wafer-Equivalent, our crystalline silicon thin-film solar cell. The EpiWT concept is similar to an Emitter Wrap-Through cell but the rear structuring requires an isolation layer. Amorphous silicon carbide layers have been tested using an experimental sample structure. The layer resistivity and pinhole incorporation were measured using different types of metal contacts, and laser-scribed isolation trenches were demonstrated. The results indicate that SiC would be a suitable isolation layer for the EpiWT cell if applied with evaporated metallisation, but the laser trenches require further optimisation.

: http://publica.fraunhofer.de/documents/N-209745.html