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Passivation of laser-drilled via holes for emitter-wrap-through-cells

: Mingirulli, N.; Trittler, S.; Bui, M.; Grohe, A.; Biro, D.; Preu, R.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-2097407 (143 KByte PDF)
MD5 Fingerprint: 2f914f956cbd7e92afee49c426581675
Created on: 6.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
M√ľnchen: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

A high speed via-hole drilling laser process for emitter-wrap through cell production is investigated concerning the removal of induced crystal damage by a subsequent alkaline etching step. The etching time necessary for damage removal is identified. Further the passivating properties at the via-hole surface of two passivation layers are compared. The passivating effect of a PECVD-SiN layer deposited on both sides of the wafers is confronted to thermal oxide passivation by lifetime measurement. A theoretical frame work using the analogy of via-holes and dislocations is applied to extract values for the surface recombination velocity at the via-hole wall. Both analysis indicate that the passivating effect of the PECVD layer depends on the via hole radius whereas the passivation quality of the SiO2-layer saturates for an etching time of equal or greater 240 s. For the highest etching times surface recombination velocities of down to 60 cm/s are found for SiN.