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Progress in silicon solar cell characterization with infrared imaging methods

: Kasemann, M.; Kwapil, W.; Walter, B.; Giesecke, J.; Michl, B.; The, M.; Wagner, J.-M.; Bauer, J.; Schütt, A.; Carstensen, J.; Kampwerth, H.; Gundel, P.; Schubert, M.C.; Bardos, R.A.; Föll, H.; Nagel, H.; Würfel, P.; Trupke, T.; Breitenstein, O.; Warta, W.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-2096693 (212 KByte PDF)
MD5 Fingerprint: 639c24f7e8f3a4550e7249e2da968f94
Created on: 6.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

This paper reviews the latest results in application and development of infrared imaging methods for fast and spatially resolved silicon solar cell characterization. Infrared imaging methods comprise electroluminescence (EL) imaging, photoluminescence (PL) imaging, and lock-in thermography (LIT). We report on new insights into the nature of local series resistances and important observations on local junction breakdown in industrial multicrystalline silicon solar cells. Significant improvements have been achieved in the applicability of infrared imaging methods for in-line application in silicon solar cell production. It was demonstrated that quantitative values for local reverse currents in hot-spots can be easily obtained in 10 milliseconds. Quantitative series resistance images were obtained in 800 milliseconds with a good potential to reduce the measurement time to below 500 milliseconds.