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Defect transformation in intentionally contaminated FZ silicon during low temperature annealing

: Habenicht, H.; Gundel, P.; Mchedlidze, T.; Kittler, M.; Coletti, G.; Warta, W.

Fulltext urn:nbn:de:0011-n-2095988 (174 KByte PDF)
MD5 Fingerprint: da790ddd12df3b6fb07e232fd86e465e
Created on: 1.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
München: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Silicon samples intentionally contaminated with iron during growth were investigated in the as-grown state and after a prolonged low temperature anneal at around 300°C with different characterisation techniques, i.e. Deep Level Transient Spectroscopy (DLTS), Temperature Dependent Lifetime Spectroscopy (TLDS) and Photoluminescence (PL) spectroscopy. A defect transformation was found, changing the type of defect from iron-related complexes to interstitial iron.