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Analysis of the physical origin of trap centres and their effect on solar cells

: Gundel, P.; Schubert, M.; Allardt, M.; Warta, W.

Fulltext urn:nbn:de:0011-n-2095936 (580 KByte PDF)
MD5 Fingerprint: 83ed600f27385ae45e940d35efe9600d
Created on: 1.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
M√ľnchen: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

Defect sites in silicon, which temporarily capture excess charge carriers (traps), are a promising source of information on defect structures relevant for PV-application of the material. In this work the correlation between traps in p-type silicon, structural crystal defects and impurities is explored in order to find the origin of these traps in multicrystalline silicon. The trap density is compared to the density of different impurities and structural crystal defects. These comparisons reveal that the trap density is positively correlated to the oxygen density and negatively correlated to the density of the metallic impurities analyzed. In addition we show that structural crystal defects are necessary but not sufficient for the existence of high trap densities. The properties of theses structural defects are further investigated by photoluminescence. In summary, structural crystal defects which are decorated by oxygen precipitates arise as likely origin of trap centers.