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High-efficiency back-contact back-junction silicon solar cell research at Fraunhofer ISE

: Granek, F.; Hermle, M.; Reichel, C.; Schultz-Wittmann, O.; Glunz, S.W.

Fulltext urn:nbn:de:0011-n-2095763 (210 KByte PDF)
MD5 Fingerprint: fd45c9e2dbfd5a7fa105a8c95e2457ac
Created on: 1.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
M√ľnchen: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

In this paper we present the Fraunhofer ISE approach to high-efficiency back-contact back-junction (BC-BJ) solar cell design and processing. An industrially feasible processing sequence for manufacturing of the BC-BJ solar cells was developed. The best efficiency of 21.3 % was achieved on 1 ohm cm n-type FZ Si. The cell features a phosphorus-doped front-surface field. Local recombination losses called electrical shading were indentified as one of the main cell loss mechanism. In the case of base resistivity of 1 ohm cm the increased recombination over the BSF and undiffused gap areas is responsible for 3.3 % reduction of IQE. This causes around 0.7 % absolute efficiency loss. A novel cell structure with locally overcompensated boron emitters is proposed as a solution to reducing the carrier recombination over the base areas.