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Analysis of hydrogen passivation by sputtered silicon nitride

: Catoir, J.; Wolke, W.; Griesshammer, M.; Preu, R.; Trassl, R.; Grambole, D.

Fulltext urn:nbn:de:0011-n-2094943 (213 KByte PDF)
MD5 Fingerprint: 2a719d9acdf80593a7d816735adfba33
Created on: 1.9.2012

Lincot, D. ; European Commission, Joint Research Centre -JRC-:
The compiled state-of-the-art of PV solar technology and deployment. 23rd European Photovoltaic Solar Energy Conference, EU PVSEC 2008. Proceedings. CD-ROM : Held in Valencia, Spain, 1 - 5 September 2008; Proceedings of the international conference
M√ľnchen: WIP-Renewable Energies, 2008
ISBN: 3-936338-24-8
ISBN: 978-3-936338-24-9
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <23, 2008, Valencia>
Conference Paper, Electronic Publication
Fraunhofer ISE ()

An important parameter for a good bulk passivation of silicon solar cells is the hydrogen content of the silicon nitride anti reflexion layer [1,2]. Several studies [3,4] show that the hydrogen diffuses during the silicon nitride (SiN:H) deposion and the contact formation process into the bulk of the solar cell and passivates impurities and defects. In this work we present some results showing the benefit of an optimal hydrogen rate and a plasma pretreatment of the SiN especially for the bulk passivation. Additionally Nuclear Reaction Resonance Analysis measurements and effusion measurements were carried out for a better understanding of the hydrogen diffusion in the silicon nitride and at the boundary layer.