Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020Carrier recombination dynamics in Ga0.51In0.49P double-heterostructures up to 500K
Walker, A.; Shaked, A.; Dagan, R.; Kribus, A.; Rosenwaks, Y.; Ohlmann, J.; Lackner, D.; Dimroth, F.
Zeitschriftenaufsatz
2018Defects and carrier lifetime in 4H-Silicon Carbide
Kallinger, Birgit; Erlekampf, Jürgen; Rommel, Mathias; Berwian, Patrick; Friedrich, J.; Matthus, Christian D.
Vortrag
2018Influence of substrate properties on the defectivity and minority carrier lifetime in 4H-SiC homoepitaxial layers
Kallinger, Birgit; Erlekampf, Jürgen; Roßhirt, Katharina; Berwian, Patrick; Stockmeier, Matthias; Vogel, Michael; Hens, Philip; Wischmeyer, Frank
Vortrag
2018Taking monocrystalline silicon to the ultimate lifetime limit
Niewelt, Tim; Richter, Armin; Kho, T.C.; Grant, N.E.; Bonilla, R.S.; Steinhauser, Bernd; Polzin, Jana-Isabelle; Feldmann, Frank; Hermle, Martin; Murphy, J.D.; Phang, S.P.; Kwapil, Wolfram; Schubert, Martin C.
Zeitschriftenaufsatz
2016Modelling of effective minority carrier lifetime in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Konferenzbeitrag
2015Modelling of effective minority carrier lifetimes in 4H-SiC n-type epilayers
Kaminzky, Daniel; Kallinger, Birgit; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Poster
2014Comparison of carrier lifetime measurements and mapping in 4H SiC using time resolved photoluminescence and μ-PCD
Kallinger, Birgit; Rommel, Mathias; Lilja, Louise; Hassan, Jawad ul; Booker, Ian; Janzen, Erik; Bergman, Peder
Konferenzbeitrag
2014HCl assisted growth of thick 4H-SiC epilayers for bipolar devices
Kallinger, Birgit; Ehlers, Christian; Berwian, Patrick; Rommel, Mathias; Friedrich, Jochen
Konferenzbeitrag