Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2011Plasmonic reflection grating back contacts for microcrystalline silicon solar cells
Paetzold, U.W.; Moulin, E.; Michaelis, D.; Böttler, W.; Wächter, C.; Hagemann, V.; Meier, M.; Carius, R.; Rau, U.
2011Properties of SiO2 and Si3N4 as gate dielectrics for printed ZnO transistors
Walther, S.; Polster, S.; Meyer, B.; Jank, M.; Ryssel, H.; Frey, L.
Zeitschriftenaufsatz, Konferenzbeitrag
2003Comparison of the ZnO:Al films deposited in static and dynamic modes by reactive mid-frequency magnetron sputtering
Hong, R.J.; Jiang, X.; Szyszka, B.; Sittinger, V.; Xu, S.H.; Werner, W.; Heide, G.
2003Growth behaviours and properties of the ZnO:Al films prepared by reactive mid-frequency magnetron sputtering
Hong, R.J.; Jiang, X.; Heide, G.; Szyszka, B.; Sittinger, V.; Werner, W.
1998Output characteristics and optical efficiency of SrS:Ce and ZnS:Mn thin-film electroluminescent devices
Richter, S.; Mauch, R.H.
1997High efficiency blue from SrS:Ce/ZnS:Mn 'color by white' thin film electroluminescence devices
Oberacker, T.A.; Troppenz, U.; Hüttl, B.; Gaertner, T.; Herrmann, R.; Velthaus, K.-O.
1996Electroluminescent materials
Mauch, R.H.
1994High luminance ZnS:Mn/SrS:Ce TFEL devices
Velthaus, K.-O.; Troppenz, U.; Hüttl, B.; Herrmann, R.; Mauch, R.H.
1993Mechanisms of thin film color electroluminescence
Mach, R.; Mueller, G.O.
1984A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistor
Schmitt, F.; Su, L.M.; Franke, D.; Kaumanns, R.