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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
Kallinger, Birgit; Polster, Sebastian; Berwian, Patrick; Friedrich, Jochen; Danilewsky, A.N.
Zeitschriftenaufsatz
2011Threading dislocations in n- and p-type 4H-SiC material analyzed by etching and synchrotron x-ray topography
Kallinger, B.; Polster, S.; Berwian, P.; Friedrich, J.; Müller, G.; Danilewsky, A.N.; Wehrhahn, A.; Weber, A.-D.
Zeitschriftenaufsatz
2010Dislocation conversion and propagation during homoepitaxial growth of 4H-SiC
Kallinger, B.; Thomas, B.; Polster, S.; Berwian, P.; Friedrich, J.
Konferenzbeitrag
2006Crystallographic anisotropy of wear on a polycrystalline diamond surface
El-Dasher, B.S.; Gray, J.J.; Tringe, J.W.; Biener, J.; Hamza, A.V.; Wild, C.; Wörner, E.; Koidl, P.
Zeitschriftenaufsatz
2006Spatially resolved X-ray diffraction measurements on (Al,Ga)N/GaN/4H-SiC heterostructures for electronic devices
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Konferenzbeitrag, Zeitschriftenaufsatz
2006X-ray topographic imaging of (AI,Ga)N/GaN based electronic device structures on SiC
Kirste, L.; Müller, S.; Kiefer, R.; Quay, R.; Köhler, K.; Herres, N.
Zeitschriftenaufsatz, Konferenzbeitrag
20022K PL topography of silicon doped VGf-GaAs wafers
Baeumler, M.; Maier, M.; Herres, N.; Bünger, T.; Stenzenberger, J.; Jantz, W.
Zeitschriftenaufsatz
2001Strain and temperature distribution in broad-area high-power laser diodes under operation determined by high resolution x-ray diffraction and topography
Zeimer, U.; Grenzer, J.; Baumbach, T.; Lübbert, D.; Mazuelas, A.; Erbert, G.
Zeitschriftenaufsatz
2000Residual strain in annealed GaAs single crystal wafers measured by scanning infrared polariscopy and x-ray diffraction and topography
Herms, M.; Fukuzawa, M.; Melov, V.G.; Schreiber, J.; Möck, P.; Yamada, M.
Zeitschriftenaufsatz
1996Stress analysis using an area detector
Schubert, A.; Michel, B.; Kämpfe, B.
Konferenzbeitrag