| | |
|---|
| 2020 | Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications
Albrecht, M.; Perez, D.; Martens, R.C.; Bauer, A.J.; Erlbacher, T. | Konferenzbeitrag |
| 2019 | Design and fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body structure
Ni, W.; Wang, X.; Xu, M.; Li, M.; Feng, C.; Xiao, H.; Li, W.; Wang, Q.; Schlichting, H.; Erlbacher, T. | Konferenzbeitrag |
| 2016 | Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs
Albrecht, Matthäus; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar | Konferenzbeitrag |
| 2015 | Detection of different target-DNA concentrations with highly sensitive AlGaN/GaN high electron mobility transistors
Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Ambacher, O. | Zeitschriftenaufsatz |
| 2014 | On an improved boron segregation calibration from a particularly sensitive power MOS process
Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, D.; Bersani, M.; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2012 | Direct integration of carbon nanotubes on CMOS with high-temperature tungsten metallization
Jupe, Andreas; Hoeren, André; Goehlich, Andreas; Meißner, Frank; Endler, Ingolf; Vogt, Holger | Konferenzbeitrag |
| 1994 | Novel high gate barrier AlInAs/GaInAs/InP HEMT structure: Concept verification and key technologies
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Schramm, C.; Kunzel, H. | Konferenzbeitrag |