Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications
Albrecht, M.; Perez, D.; Martens, R.C.; Bauer, A.J.; Erlbacher, T.
Konferenzbeitrag
2019Design and fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body structure
Ni, W.; Wang, X.; Xu, M.; Li, M.; Feng, C.; Xiao, H.; Li, W.; Wang, Q.; Schlichting, H.; Erlbacher, T.
Konferenzbeitrag
2016Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs
Albrecht, Matthäus; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar
Konferenzbeitrag
2015Detection of different target-DNA concentrations with highly sensitive AlGaN/GaN high electron mobility transistors
Espinosa, N.; Schwarz, S.U.; Cimalla, V.; Ambacher, O.
Zeitschriftenaufsatz
2014On an improved boron segregation calibration from a particularly sensitive power MOS process
Koffel, S.; Burenkov, A.; Sekowski, M.; Pichler, P.; Giubertoni, D.; Bersani, M.; Knaipp, M.; Wachmann, E.; Schrems, M.; Yamamoto, Y.; Bolze, D.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Direct integration of carbon nanotubes on CMOS with high-temperature tungsten metallization
Jupe, Andreas; Hoeren, André; Goehlich, Andreas; Meißner, Frank; Endler, Ingolf; Vogt, Holger
Konferenzbeitrag
1994Novel high gate barrier AlInAs/GaInAs/InP HEMT structure: Concept verification and key technologies
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Schramm, C.; Kunzel, H.
Konferenzbeitrag