Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2002X-Ray determination of the composition of partially strained group-III nitride layers using the extended bond method
Herres, N.; Kirste, L.; Obloh, H.; Köhler, K.; Wagner, J.; Koidl, P.
Zeitschriftenaufsatz
1999Strain Relaxation in Surface Nano-Structures Studied by X-Ray Diffraction Methods
Baumbach, T.; Lübbert, D.; Gailhanou, M.
Zeitschriftenaufsatz
1996Growth of high quality Al(0,48)In(0,52)As/Ga(0,47)In(0,53)As heterostructures using strain relaxed Al(x)Ga(y)In(1-x-y)As buffer layers on GaAs
Haupt, M.; Köhler, K.; Ganser, P.; Emminger, S.; Müller, S.; Rothemund, W.
Zeitschriftenaufsatz
1996Influence of interdiffusion processes on optical and structural properties of pseudomorphic In(0.35)Ga(0.65)As/GaAs multiple quantum well structures
Bürkner, S.; Baeumler, M.; Wagner, J.; Larkins, E.C.; Rothemund, W.; Ralston, J.D.
Zeitschriftenaufsatz
1995Impurity free selective interdiffusion of pseudomorphic InyGa1-yAs/GaAs multiple quantum well laser and modulator structures
Bürkner, S.; Larkins, E.C.; Baeumler, M.; Wagner, J.; Rothemund, W.; Flemig, G.; Ralston, J.D.
Zeitschriftenaufsatz
1994Ion-channeling studies of InyGa1-yAs/GaAs strained-layer single and multiple quantum-well structures
Flemig, G.W.; Brenn, R.; Larkins, E.C.; Bürkner, S.; Bender, G.; Baeumler, M.; Ralston, J.D.
Zeitschriftenaufsatz
1994Strain relaxation in In0.2Ga0.8As/GaAs MQW structures
Bender, G.; Larkins, E.C.; Schneider, H.; Ralston, J.D.; Koidl, P.
Konferenzbeitrag
1993Strain relaxation in high-speed p-i-n photodetectors with In0.2Ga0.8As/GaAs multiple quantum wells.
Bender, G.; Larkins, E.C.; Schneider, H.; Ralston, J.D.; Koidl, P.
Zeitschriftenaufsatz
1993Strain-relaxed, high-speed In0.2Ga0.8As MQW p-i-n photodetectors grown by MBE.
Larkins, E.C.; Bender, G.; Schneider, H.; Ralston, J.D.; Rothemund, W.; Dischler, B.; Fleissner, J.; Koidl, P.; Wagner, J.
Zeitschriftenaufsatz