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| 2016 | A possible explanation of the record electrical performance of silicon nanowire tunnel FETs with silicided source contact
Burenkov, Alex; Lorenz, Juergen | Konferenzbeitrag |
| 2014 | Analysis of solar cell cross sections with micro-light beam induced current (µLBIC)
Breitwieser, M.; Heinz, F.; Büchler, A.; Kasemann, M.; Schön, J.; Warta, W.; Schubert, M.C. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2014 | Localization and characterization of annealing-induced shunts in Ni-plated monocrystalline silicon solar cells
Büchler, A.; Kluska, S.; Kasemann, M.; Breitwieser, M.; Kwapil, W.; Hähnel, A.; Blumtritt, H.; Hopman, S.; Glatthaar, M. | Zeitschriftenaufsatz |
| 2014 | Micro characterization and imaging of spikes in nickel plated solar cells
Büchler, A.; Kluska, S.; Brand, A.; Geisler, C.; Hopman, S.; Glatthaar, M. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2014 | Nanoscale Investigation of the Interface Situation of Plated Nickel and Thermally Formed Nickel Silicide for Silicon Solar Cell Metallization
Mondon, A.; Wang, D.; Zuschlag, A.; Bartsch, J.; Glatthaar, M.; Glunz, S.W. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2007 | The structure, diffusion and phase formation in Mo/Si multilayers with stressed Mo layers
Zubarev, E.N.; Zhurba, A.V.; Kondratenko, V.V.; Pinegyn, V.I.; Sevryukova, V.A.; Yulin, S.A.; Feigl, T.; Kaiser, N. | Zeitschriftenaufsatz |
| 2005 | Phase formation in porous liquid phase sintered silicon carbide: Part II: Interaction between Y2O3 and SiC
Ihle, J.; Herrmann, M.; Adler, J. | Zeitschriftenaufsatz |
| 2005 | Phase formation in porous liquid phase sintered silicon carbide: Part III: Interaction between Al2O3-Y2O3 and SiC
Ihle, J.; Herrmann, M.; Adler, J. | Zeitschriftenaufsatz |
| 2004 | Silicon Front-End Junction Formation - Physics and Technology
: Pichler, P.; Claverie, A.; Lindsay, R.; Orlowski, M.; Windl, W. | Tagungsband |
| 1999 | Nondestructive analytical tools for characterization of thin titanium silicide films prepared by conventional and direct step silicidation with enhanced transition
Kal, S.; Ryssel, H. | Zeitschriftenaufsatz |
| 1997 | Application of high energy resolved X-ray emission spectroscopy for monitoring of silicide formation in Co/SiO2/Si system
Kurmaev, E.Z.; Shamin, S.N.; Galakhov, V.R.; Kasko, I. | Zeitschriftenaufsatz |
| 1994 | Nuclear microprobe application to semiconductor process development - silicide formation and multi-layered structure
Takai, M.; Katayama, Y.; Lohner, T.; Kinomura, A.; Ryssel, H.; Tsien, P.H.; Satou, M.; Chayahara, A.; Burte, E.P. | Zeitschriftenaufsatz |
| 1994 | Practical aspects of ion beam analysis of semiconductor structures
Frey, L.; Pichler, P.; Kasko, I.; Thies, I.; Lipp, S.; Streckfuß, N.; Gong, L. | Zeitschriftenaufsatz |
| 1994 | Proceedings of the FORWIHR Symposium on High Performance Scientific Computing
Griebel, M.; Zenger, C. | Tagungsband |
| 1993 | Effect of ion-beam mixing temperature on cobalt silicide formation
Kasko, I.; Dehm, C.; Frey, L.; Ryssel, H. | Zeitschriftenaufsatz |
| 1993 | Influence of impurities on ion beam induced TiSi2 formation
Dehm, C.; Raum, B.; Kasko, I.; Ryssel, H. | Zeitschriftenaufsatz |
| 1992 | The influence of ion beam mixed TiSi2 layers on reverse characteristics of diodes.
Zimmermann, H.; Burte, E.P.; Dehm, C.; Gyulai, J. | Zeitschriftenaufsatz |
| 1989 | Ion-beam mixed MoSi2 layers - formation and contract properties
Dehm, C.; Gyulai, J.; Ryssel, H.; Valyi, G. | Konferenzbeitrag |
| 1988 | The influence of implantation parameters and annealing conditions on the formation and properties of MoSi2 layers.
Dehm, C.; Möller, W.; Ryssel, H.; Valyi, G. | Aufsatz in Buch |