Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Band structure engineering in organic semiconductors
Schwarze, Martin; Tress, Wolfgang; Beyer, Beatrice; Gao, Feng; Scholz, Reinhard; Poelking, Karl; Ortstein, Katrin; Leo, Karl
Zeitschriftenaufsatz
2016III-V multi-junction Metal-Wrap-Through (MWT) concentrator solar cells
Oliva, E.; Salvetat, T.; Jany, C.; Thibon, R.; Helmers, H.; Steiner, M.; Schachtner, M.; Beutel, P.; Klinger, V.; Moulet, J.; Dimroth, F.
Konferenzbeitrag
2015Ordering of PCDTBT revealed by time-resolved electron paramagnetic resonance spectroscopy of its triplet excitons
Biskup, T.; Sommer, M.; Rein, S.; Meyer, D.L.; Kohlstädt, M.; Würfel, U.; Weber, S.
Zeitschriftenaufsatz
2015Photoluminescence-based current-voltage characterisation of individual subcells in multi-junction devices
Alsonso-Álvarez, D.; Lackner, D.; Philipps, S.P.; Bett, A.W.; Ekins-Daukes, N.J.
Konferenzbeitrag
2013Determination of hardness and Young's modulus for important III-V compound semiconductors
Klinger, V.; Roesener, T.; Lorenz, G.; Petzold, M.; Dimroth, F.
Zeitschriftenaufsatz
2013Overview about technology perspectives for high efficiency solar cells for space and terrestrial applications
Bett, A.W.; Philipps, S.P.; Essig, S.; Heckelmann, S.; Kellenbenz, R.; Klinger, V.; Niemeyer, M.; Lackner, D.; Dimroth, F.
Konferenzbeitrag
2013Parameterization of free carrier absorption in highly doped silicon for solar cells
Rüdiger, M.; Greulich, J.; Richter, A.; Hermle, M.
Zeitschriftenaufsatz
2013Temperature dependent electroluminescence and voltages of multi-junction solar cells
Karcher, C.; Helmers, H.; Schachtner, M.; Dimroth, F.; Bett, A.W.
Konferenzbeitrag
2000MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride
Wolfram, P.; Ebert, W.; Kreissl, J.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
1998Comparative study of surface roughness measured on polysilicon using spectroscopic ellipsometry and atomic force microscopy
Petrik, P.; Biro, L.P.; Fried, M.; Lohner, T.; Berger, R.; Schneider, C.; Gyulai, J.; Ryssel, H.
Zeitschriftenaufsatz
1996Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W.
Konferenzbeitrag
1993Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1993Vectorial simulation of passive TE/TM mode converter devices on InP
Weinert, C.M.; Heidrich, H.
Zeitschriftenaufsatz
1992Coherent receiver front-end module including a polarization diversity waveguide OIC and a high-speed InGaAs twin-dual p-i-n photodiode OEIC both based on InP
Hamacher, M.; Heidrich, H.; Kruger, U.; Stenzel, R.; Bauer, J.G.; Albrecht, H.
Zeitschriftenaufsatz
1992Key components for optical broadband communication based in InP
Preier, H.; Doldissen, W.; Venghaus, H.
Zeitschriftenaufsatz
1992Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy
Kunzel, H.; Bottcher, J.; Gibis, R.; Urmann, G.
Zeitschriftenaufsatz
1991The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layers
Sartorius, B.; Reier, F.; Wolfram, P.
Konferenzbeitrag, Zeitschriftenaufsatz
1991MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers
Passenberg, W.; Bach, H.G.; Bottcher, J.
Konferenzbeitrag
1991Optimization and calibration of two-wavelength transmission for absolute thickness measurements of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.
Konferenzbeitrag
1991Recent advances in dry etching processes for InP-based materials
Niggebrugge, U.
Konferenzbeitrag
1991RF and noise characterization of a monolithically integrated receiver on InP
Feiste, U.; Kaiser, R.; Mekonnen, G.G.; Schramm, C.; Trommer, D.; Unterborsch, G.
Konferenzbeitrag
1991Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure
Paraskevopoulos, A.; Weber, R.; Harde, P.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1990Characteristics of 1.5 µm InGaAs/InGaAsP MQW lasers
Duser, H.; Fidorra, F.; Franke, D.; Mohrle, M.; Rosenzweig, M.; Wolfram, P.; Grutzmacher, D.
Konferenzbeitrag
1990Control of a reactive ion etching process for InP and related materials by in-situ ellipsometry in the near infrared
Muller, R.
Konferenzbeitrag
1990The development of a polarization-diversity heterodyne receiver-waveguide switch on InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.P.; Schlak, M.; Weinert, C.M.
Konferenzbeitrag
1990Dry chemical etching processes for the production of InP-based components
Niggebrugge, U.; Muller, R.
Konferenzbeitrag
1990Hydrogen passivation of Zn acceptors in InGaAs during reactive ion etching
Moehrie, M.
Zeitschriftenaufsatz
1990WDM components on the basis of InGaAsP/InP directional couplers
Bornholdt, C.; Kappe, F.; Nolting, H.P.; Stenzel, R.; Venghaus, H.; Weinert, C.M.
Konferenzbeitrag
1989Butt coupled photodiodes integrated with Y-branched optical waveguides on InP
Döldissen, W.; Fiedler, F.; Kaiser, R.; Mörl, L.
Zeitschriftenaufsatz
1989Implanted-collector InGaAsP/InP heterojunction bipolar transistor
Su, L.M.; Grote, N.; Schumacher, P.; Franke, D.
Konferenzbeitrag
1989Two-dimensional simulation methods (integrated optics)
Nolting, H.-P.; Weinert, C.M.
Zeitschriftenaufsatz
1989Wideband bipolar multiplier IC with high dynamic range for use in coherent optical receivers
Fluge, M.; Frederiksen, P.T.; Enning, B.; Walf, G.; Weber, H.G.; Rein, H.M.
Zeitschriftenaufsatz
1988A comparative study on protection methods against InP substrate decomposition in liquid phase epitaxy
Pfanner, K.; Franke, D.; Sartorius, B.; Schlak, M.
Zeitschriftenaufsatz
1988Thermal degradation effects in InP
Sartorius, B.; Schlak, M.; Rosenzweig, M.; Parschke, K.
Zeitschriftenaufsatz
1987Current-injection analysis of invertible InGaAsP/InP double-heterostructure bipolar transistors
Bach, H.G.; Grote, N.; Fiedler, F.
Konferenzbeitrag
1986Monolithic IO-technology-modulators and switches based on InP
Schlachetzki, A.
Konferenzbeitrag
1985NpnN double-heterojunction bipolar transistor on InGaAsP/InP
Su, L.M.; Grote, N.; Kaumanns, R.; Schroeter, H.
Zeitschriftenaufsatz