Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2002MOVPE-based in-situ etching of InP epitaxial heterostructures
Wolfram, P.; Franke, D.; Ebert, W.; Grote, N.
Konferenzbeitrag
2000Three-Dimensional Simulation of the Conformality of Copper Layers Deposited by Low-Pressure Chemical Vapor Deposition from CuI(tmvs)(hfac)
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
1999Control and Improvement of Surface Triangulation for Three-Dimensional Process Simulation
Bär, E.; Lorenz, J.
Konferenzbeitrag
1999Novel process control strategies for 300 mm semiconductor production
Pfitzner, L.; Oechsner, R.; Schneider, C.; Ryssel, H.; Riemer, M.; Podewils, M. von
Zeitschriftenaufsatz
1998Integrated three-dimensional topography simulation and its application to dual-damascene processing
Bär, E.; Henke, W.; List, S.; Lorenz, J.
Konferenzbeitrag
1998Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Zeitschriftenaufsatz
1998Three-dimensional simulation of layer deposition
Bär, E.; Lorenz, J.; Ryssel, H.
Zeitschriftenaufsatz
19973D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
19973D simulation of sputter deposition of titanium layers in contact holes with high aspect ratios2
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1997Atomistic analysis of the vacancy diffusion mechanism
List, S.; Ryssel, H.
Konferenzbeitrag
1997Integrated three-dimensional topography simulation of contact hole processing
Bär, E.; Benvenuti, A.; Henke, W.; Jünemann, B.; Kalus, C.; Niedermaier, P.; Lorenz, J.
Konferenzbeitrag
1997Monte-Carlo simulation of silicon amorphization during ion implantation
Bohmayr, W.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Selberherr, S.
Konferenzbeitrag
1997Three-dimensional simulation of contact hole metallization using aluminum sputter deposition at elevated temperatures
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1997Three-dimensional simulation of conventional and collimated sputter deposition of Ti layers into high aspect ratio contact holes
Bär, E.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1997Three-dimensional simulation of ion implantation
Lorenz, J.; Tietzel, K.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
1996Hydrogen radical processing-in-situ semiconductor surface cleaning for epitaxial regrowth
Kunzel, H.; Hase, A.; Griebenow, U.
Konferenzbeitrag
1996Three-dimensional simulation of ion implantation
Tietzel, K.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1995Active silicon CMOS addressing matrices for light-valve projection displays
Molzow, W.-D.; Brinker, W.; Wirges, W.; Gerhard-Multhaupt, R.; Melcher, R.; Budde, W.; Fiedler, H.
Zeitschriftenaufsatz
1994Development and characterization of microelectrode arrays by means of electrochemical and surface analysis methods.
Wittkampf, M.; Naendorf, B.; Cammann, K.; Rospert, M.; Mokwa, W.; Hagenhoff, B.; Benninghoven, A.; Amrein, M.; Reichelt, R.; Gründig, B.
Konferenzbeitrag
1994Ohmic contacts to buried n-GaInAs layers for GaInAs/AlInAs-HEMTs
Umbach, A.; Schramm, C.; Bottcher, J.; Unterborsch, G.
Konferenzbeitrag
1993Stability of an AlGaAs/GaAs/AlGaAsE/D-HEMT process with double pulse doping
Jakobus, T.; Bronner, W.; Hofmann, P.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Landsberg, B.; Raynor, B.; Schneider, J.; Grün, N.; Windscheif, J.; Berroth, M.; Hornung, J.
Konferenzbeitrag
1992The modelling of platinum diffusion in silicon under non-equilibrium conditions
Zimmermann, H.; Ryssel, H.
Zeitschriftenaufsatz
1991Accurate measurement of the vacancy equilibrium concentration in silicon
Zimmermann, H.
Zeitschriftenaufsatz
1991Carrier concentration profiles by high-energy boron ion implantation into silicon
Sayama, H.; Takai, M.; Namba, S.; Ryssel, H.
Zeitschriftenaufsatz
1991Effect of deposition temperature of arsenic implanted poly-Si-on-insulator on grain size and residual stress
Takai, M.; Kato, K.; Namba, S.; Pfannenmüller, U.; Ryssel, H.
Zeitschriftenaufsatz
1991The influence of post-exposure bake on linewidth control for the resist system RAY-PN-AZPN 100- in X-ray mask fabrication
Chlebek, J.; Schulz, T.; Grimm, J.; Huber, H.-L.
Konferenzbeitrag
1991Modelling of illumination effects on resist profiles in X-ray lithography
Oertel, H.; Weiß, M.; Huber, H.-L.; Vladimirsky, Y.; Maldonado, J.R.
Konferenzbeitrag
1991Oblique ion implantation into nonplanar targets
Takai, M.; Namba, S.; Ryssel, H.
Zeitschriftenaufsatz
1991Observation of inverse u-shaped profiles after platinum diffusion in silicon
Zimmermann, H.; Ryssel, H.
Zeitschriftenaufsatz
1991Recent advances in dry etching processes for InP-based materials
Niggebrugge, U.
Konferenzbeitrag
1991Thickness inhomogeneity during silicon X-ray mask membrane fabrication: generation and prevention
Löchel, B.; Macioßek, A.; Huber, H.-L.; König, M.
Konferenzbeitrag
1991Überblick und Haupttrends im Bereich Halbleitermaterialien und -technologien
Kersten, G.
Buch
1990Ion projection lithography - electronic alignment and dry development of IPL exposed resist materials
Buchmann, L.-M.; Heuberger, A.; Fallmann, W.; Paschke, F.; Stangl, G.; Chalupka, A.; Fegerl, J.; Löschner, H.; Malek, L.; Nowak, R.; Stengl, G.; Traher, C.; Wolf, P.; Fischer, R.
Zeitschriftenaufsatz
1990Silicon micromachining for microsensors and microactuators
Benecke, W.
Konferenzbeitrag
1989Butt coupled photodiodes integrated with Y-branched optical waveguides on InP
Döldissen, W.; Fiedler, F.; Kaiser, R.; Mörl, L.
Zeitschriftenaufsatz
1989Contributions of atomic hydrogen to the low temperature removal of traps at silicon oxide-silicon interfaces.
Burte, E.P.; Matthies, P.
Zeitschriftenaufsatz
1989Simulation halbleitertechnologischer Prozess-Schritte in der Mikroelektronik
Lorenz, J.; Pelka, J.; Ryssel, H.
Zeitschriftenaufsatz
1989Two-dimensional simulation methods (integrated optics)
Nolting, H.-P.; Weinert, C.M.
Zeitschriftenaufsatz
1987Current-injection analysis of invertible InGaAsP/InP double-heterostructure bipolar transistors
Bach, H.G.; Grote, N.; Fiedler, F.
Konferenzbeitrag
1987Dielectrics for passivation of planar InP/InGaAs diodes
Unterborsch, G.; Bach, H.G.; Schmitt, F.; Schmidt, R.; Schlaak, W.
Konferenzbeitrag, Zeitschriftenaufsatz
1986Influence of sputter effects on the resolution in X-ray mask repair
Betz, H.; Heuberger, A.; Economou, N.P.; Shaver, D.C.
Konferenzbeitrag
1986A novel process for reactive ion etching on InP, using CH4/H2
Niggebrugge, U.; Klug, M.; Garus, G.
Konferenzbeitrag
1986Reactive ion beam etching of InP with N2 and N2/O2 mixtures
Katzschner, W.; Niggebrügge, U.; Löffler, R.; Schroeter-Janssen, H.
Zeitschriftenaufsatz
1984Ion beam milling of InP with an Ar/O2-gas mixture
Katzchner, W.; Steckenborn, A.; Löffler, R.; Grote, N.
Zeitschriftenaufsatz
1977The development of information theory and semiconductor technology and the practical effects on telecommunication technology
Ohnsorge, H.
Konferenzbeitrag