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| 2007 | Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AIAs/AIAsSb
Grimm, C.V.-B.; Priegnitz, M.; Winnerl, S.; Schneider, H.; Helm, M.; Biermann, K.; Künzel, H. | Zeitschriftenaufsatz |
| 2002 | Low-temperature-grown 1.55 mu m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response
Kuenzel, H.; Biermann, K.; Boettcher, J.; Harde, P.; Kurtzweg, M.; Schneider, R.; Neumann, W.; Nickel, D.; Reimann, K.; Woerner, M.; Elsaesser, T. | Konferenzbeitrag |
| 2001 | Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
Künzel, H.; Biermann, K.; Nickel, D.; Elsaesser, T. | Zeitschriftenaufsatz |
| 2000 | MBE growth of single crystalline AlInAs/GaInAs MQWs at the low growth temperature limit
Biermann, K.; Kunzel, H.; Elsasser, T. | Konferenzbeitrag |
| 1998 | A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure
Mörl, L.; Bornholdt, C.; Hoffmann, D.; Matzen, K.; Mekonnen, G.G.; Reier, F.W. | Konferenzbeitrag |
| 1997 | Barrier composition dependence of the emission properties of AlGaInAs/GaInAs quantum wells grown by molecular beam epitaxy
Hase, A.; Chew-Walter, A.; Kuenzel, H. | Zeitschriftenaufsatz |
| 1997 | Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere
Roehle, H.; Schroeter-Janssen, H.; Kaiser, R. | Zeitschriftenaufsatz |
| 1997 | LP-MOVPE growth of laser structures using nitrogen carrier gas
Roehle, H.; Schroeter-Janssen, H. | Konferenzbeitrag |
| 1997 | Strain compensated GaInAs/AlInAs tunnelling barrier MQW structure for polarisation independent optical switching
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Mörl, L.; Weinert, C.M. | Konferenzbeitrag |
| 1996 | Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures
Reier, F.W.; Bornholdt, C.; Hoffmann, D.; Kappe, F.; Mörl, L. | Konferenzbeitrag |
| 1996 | LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas
Roehle, H.; Schroeter-Janssen, H. | Konferenzbeitrag |
| 1995 | Fast 2*2 Mach-Zehnder optical space switches using InGaAsP-InP multiquantum-well structures
Agrawal, N.; Weinert, C.M.; Ehrke, H.-J.; Mekonnen, G.G.; Franke, D.; Bornholdt, C.; Langenhorst, R. | Zeitschriftenaufsatz |
| 1995 | In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth
Kunzel, H.; Bochnia, R.; Bottcher, J.; Harde, P.; Hase, A.; Griebenow, U. | Zeitschriftenaufsatz |
| 1995 | Novel digital optical switch with crosstalk below -40 dB based on absorptive switching
Hoffmann, D.; Bornholdt, C.; Kappe, F.; Morl, L.; Reier, F.-W. | Konferenzbeitrag |
| 1995 | Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Strahle, S.; Kohn, E. | Zeitschriftenaufsatz |
| 1994 | 2*2 optical space switches using InGaAsP/InP MQW structures for 10-GHz applications
Agrawal, N.; Franke, D.; Weinert, C.M.; Bornholdt, C. | Konferenzbeitrag |
| 1994 | Development of advanced GaInAs/AlInAs delta-doped SQW-HEMT structures
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Hase, A. | Konferenzbeitrag |
| 1994 | High-speed optical 2*2 space switch on InP with travelling wave electrodes
Kappe, F.; Bornholdt, C.; Mekonnen, G.G.; Ehrke, H.J.; Reier, F.-W.; Hoffmann, D. | Konferenzbeitrag |
| 1994 | Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Heedt, C. | Zeitschriftenaufsatz |
| 1994 | Self-consistent calculation of quantum well electron transfer structures for ultrafast optical switches
Weinert, C.M.; Agrawal, N. | Konferenzbeitrag |
| 1994 | Self-consistent finite difference method for simulation and optimization of quantum well electron transfer structures
Weinert, C.M.; Agrawal, N. | Zeitschriftenaufsatz |
| 1993 | Highly abrupt modulation Zn doping in LP-MOVPE grown InAlAs as applied to quantum well electron transfer structures for optical switching
Reier, F.W.; Agrawal, N.; Harde, P.; Bochnia, R. | Konferenzbeitrag |
| 1993 | MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures
Kunzel, H.; Bottcher, J.; Hase, A.; Shramm, C. | Zeitschriftenaufsatz |
| 1992 | Electro-optic modulation by electron transfer in multiple InGaAsP/InP barrier, reservoir, and quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C. | Zeitschriftenaufsatz |
| 1992 | Fundamental characteristics of InGaAs/InGaAsP-MQW-SCH-lasers emitting in 1.3 mu m wavelength range
Möhrle, M.; Rosenzweig, M.; Düser, H.; Grützmacher, D. | Zeitschriftenaufsatz |
| 1992 | MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices
Agrawal, N.; Franke, D.; Grote, N.; Reier, F.W.; Schroeter-Janssen, H. | Zeitschriftenaufsatz |
| 1991 | Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.; Clemens, U.; Witt, A.; Wegener, M. | Konferenzbeitrag |
| 1991 | Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers
Rosenzweig, M.; Möhrle, M.; Düser, H.; Venghaus, H. | Zeitschriftenaufsatz |