| | |
|---|
| 2011 | Next generation 8xx nm laser bars and single emitters
Strauss, U.; Müller, M.; Swietlik, T.; Fehse, R.; Lauer, C.; Grönninger, G.; König, H.; Keidler, M.; Fillardet, T.; Kohl, A.; Stoiber, M.; Scholl, I.; Biesenbach, J.; Baeumler, M.; Konstanzer, H. | Konferenzbeitrag |
| 2011 | Polarization switching of the optical gain in semipolar InGaN quantum wells
Scheibenzuber, W.; Schwarz, U.T. | Zeitschriftenaufsatz |
| 2011 | Recent results of blue and green InGaN laser diodes for laser projection
Lutgen, S.; Dini, D.; Pietzonka, I.; Tautz, S.; Breidenassel, A.; Lell, A.; Avramescu, A.; Eichler, C.; Lermer, T.; Müller, J.; Bruederl, G.; Gomez-Iglesias, A.; Strauss, U.; Scheibenzuber, W.G.; Schwarz, U.T.; Pasenow, B.; Koch, S. | Konferenzbeitrag |
| 2009 | Injection seeded single mode intra-cavity absorption spectroscopy
Scherer, B.; Salzmann, W.; Wöllenstein, J.; Weidemüller, M. | Zeitschriftenaufsatz |
| 2009 | Pressure tuning of external-cavity tapered laser
Trzeciakowski, W.; Dybala, F.; Mrozowicz, M.; Bercha, A.; Piechal, B.; Ostendorf, R.; Gilly, J.; Kelemen, T. | Zeitschriftenaufsatz |
| 2008 | 5 W frequency stabilized 976 nm tapered diode laser
Friedmann, P.; Gilly, J.; Moritz, S.; Ostendorf, R.; Kelemen, M.T. | Konferenzbeitrag |
| 2008 | GaSb-based VECSEL exhibiting multiple-watt output power and high beam quality at a lasing wavelength of 2.25µm
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J. | Konferenzbeitrag |
| 2008 | High-brightness 2.X µm semiconductor lasers
Rattunde, M.; Kelemen, M.T.; Schulz, N.; Pfahler, C.; Manz, C.; Schmitz, J.; Kaufel, G.; Wagner, J. | Konferenzbeitrag |
| 2008 | High-brightness quantum well and quantum dot tapered lasers
Michel, N.; Krakowski, M.; Hassiaoui, I.; Calligaro, M.; Lecomte, M.; Parillaud, O.; Weinmann, P.; Zimmermann, C.; Kaiser, W.; Kamp, M.; Forchel, A.; Pavelescu, E.-M.; Reithmaier, J.-P.; Sumpf, B.; Erbert, G.; Kelemen, M.; Ostendorf, R.; García-Tijero, J.-M.; Odriozola, H.; Esquivias, I. | Konferenzbeitrag |
| 2008 | High-power diode lasers for the 1.9 to 2.2 µm wavelength range
Kelemen, M.T.; Gilly, J.; Moritz, R.; Rattunde, M.; Schmitz, J.; Wagner, J. | Konferenzbeitrag |
| 2008 | High-power high-brightness operation of a 2.25-mu m (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser
Rösener, B.; Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J. | Zeitschriftenaufsatz |
| 2008 | An improved active region concept for highly efficient GaSb-based optically in-well pumped vertical-external-cavity surface-emitting lasers
Schulz, N.; Rösener, B.; Moser, R.; Rattunde, M.; Manz, C.; Köhler, K.; Wagner, J. | Zeitschriftenaufsatz |
| 2008 | Infrared semiconductor lasers for DIRCM applications
Wagner, J.; Schulz, N.; Rösener, B.; Rattunde, M.; Yang, Q.; Fuchs, F.; Manz, C.; Bronner, W.; Mann, C.; Köhler, K.; Raab, M.; Romasev, E.; Tholl, H.D. | Konferenzbeitrag |
| 2008 | Optically pumped (AlGaIn)(AsSb) semiconductor disk laser employing a dual-chip cavity
Rösener, B.; Schulz, N.; Rattunde, M.; Moser, R.; Manz, C.; Köhler, K.; Wagner, J. | Konferenzbeitrag |
| 2008 | Polymer optical motherboard technology
Keil, N.; Yao, H.; Zawadzki, C.; Grote, N.; Schell, M. | Konferenzbeitrag |
| 2007 | Optical coupling of active components and polymer based optical waveguide boards
Keil, N.; Yao, H.H.; Zawadzki, C.; Mohrle, M.; Schlaak, W.; Grote, N. | Konferenzbeitrag |
| 2007 | Vertically coupled microring laser devices based on InP using BCB waferbonding
Hamacher, M.; Troppenz, U.; Heidrich, H.; Dragoi, V. | Konferenzbeitrag |
| 2006 | GaSb-based tapered diode lasers at 1.93 µm with 1.5-W nearly diffraction-limited power
Pfahler, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Rattunde, M.; Schmitz, J.; Wagner, J. | Zeitschriftenaufsatz |
| 2006 | GaSb-based VECSELs emitting at around 2.35 µm employing different optical pumping concepts
Schulz, N.; Rattunde, M.; Manz, C.; Köhler, K.; Wild, C.; Wagner, J.; Beyertt, S.-S.; Brauch, U.; Kübler, T.; Giesen, A. | Konferenzbeitrag |
| 2005 | (AlGaIn)(AsSb) quantum well diode lasers with improved beam quality
Wagner, J.; Geerlings, E.; Kaufel, G.; Kelemen, M.T.; Manz, C.; Pfahler, C.; Rattunde, M.; Schmitz, J. | Konferenzbeitrag |
| 2005 | 40 Gb/s WDM-transmission with EDFAs in comparison to Raman amplified transmission with Raman fiber lasers as first-order and second-order pump
Schulze, E.; Warnke, A.; Raub, F. | Konferenzbeitrag |
| 2005 | Intensity noise properties of quantum cascade lasers
Gensty, T.; Elsässer, W.; Mann, C. | Zeitschriftenaufsatz |
| 2005 | Optical switching of clockwise/anti-clockwise lasing in bus coupled microrings
Troppenz, U.; Hamacher, M.; Radziunas, M.; Heidrich, H. | Konferenzbeitrag |
| 2003 | Infrarot-Diodenlaser auf der Basis der III-V-Antimonide
Rattunde, M. | Dissertation |
| 2001 | InGaAs/AlGaAs Leistungslaser hoher elektro-optischer Effizienz und hoher Brillanz
Schmitt, A. | Dissertation |
| 2001 | Micro thermal management of high-power diode laser bars
Lorenzen, D.; Bonhaus, J.; Fahrner, E.; Kaulfersch, E.; Wörner, E.; Koidl, P.; Unger, K.; Müller, D.; Rölke, S.; Schmidt, H.; Grellmann, M. | Zeitschriftenaufsatz |
| 2001 | Polarization insensitive frequency conversion by four-wave mixing in a semiconductor optical amplifier
Schnabel, R.; Dietrich, E.; Diez, S.; Eiselt, M. | Konferenzbeitrag |
| 2000 | Femtosecond pulse source with grating-waveguide structure
Pawlowski, E.; Friesem, A.A.; Kuller, L.; Levy-Yurista, G.; Ludwig, R.; Weber, H.G. | Konferenzbeitrag |
| 2000 | Halbleiter-Trapezverstärker als Laserstrahlquellen hoher Brillanz
Morgott, S. | Dissertation |
| 2000 | High-power diode lasers. Fundamentals, technology, applications
: Diehl, R. | Buch |
| 2000 | Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3.-2.7. µm laser structures
Simanowski, S.; Herres, N.; Mermelstein, C.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.; Weimann, G. | Zeitschriftenaufsatz |
| 1999 | Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 mu m laser structures on GaSb substrates
Simanowski, S.; Walther, M.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Maier, M.; Mermelstein, C.; Wagner, J.; Weimann, G. | Zeitschriftenaufsatz |
| 1999 | Carrier capture and escape processes in In(0.25)Ga(0.75)As-GaAs quantum-well lasers
Romero, B.; Esquivias, I.; Weisser, S.; Larkins, E.C.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1999 | Carrier dynamics and microwave characteristics of GaAs-based quantum-well lasers
Esquivias, I.; Weisser, S.; Romero, B.; Ralston, J.D.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1999 | High-efficiency and high-brightness 980-nm AlGaAs/InGaAs diode lasers
Braunstein, J.; Mikulla, M.; Schmitt, A.; Kiefer, R.; Walther, M.; Weimann, G. | Konferenzbeitrag |
| 1999 | Mode conversion in GaN based laser structures on sapphire due to the birefringence of the nitrides
Heppel, S.; Wirth, R.; Off, J.; Scholz, F.; Hangleiter, A.; Obloh, H.; Wagner, J.; Kirchner, C.; Kamp, M. | Zeitschriftenaufsatz |
| 1999 | Stability of the beam quality of 0.98 mu m InGaAlAs tapered laser oscillators
Schmitt, A.; Mikulla, M.; Walther, M.; Kiefer, R.; Braunstein, J.; Weimann, G. | Konferenzbeitrag |
| 1998 | High-power near-diffraction-limited external cavity laser, tunable from 1030 to 1085 nm
Morgott, S.; Chazan, P.; Mikulla, M.; Walther, M.; Kiefer, R.; Braunstein, J.; Weimann, G. | Zeitschriftenaufsatz |
| 1998 | Lead chalcogenide mid-infrared diode lasers fabricated by ion-implantation
Xu, J.; Lambrecht, A.; Tacke, M. | Zeitschriftenaufsatz |
| 1998 | Optical microwave generation and transmission experiments in the 12- and 60-GHz region for wireless communications
Braun, R.-P.; Grosskopf, G.; Heidrich, H.; Helmolt, C. von; Kaiser, R.; Kruger, K.; Kruger, U.; Rohde, D.; Schmidt, F.; Stenzel, R.; Trommer, D. | Zeitschriftenaufsatz |
| 1997 | Birefringence in polarization insensitive semiconductor optical amplifiers: Influence on four-wave mixing
Diez, S.; Schmidt, C.; Ludwig, R.; Weber, H.G.; Kindt, S.; Obermann, K.; Kolchanov, I.; Petermann, K.; Ducellier, T.; Doussiere, P. | Konferenzbeitrag |
| 1997 | Chirp characteristics of 1.55 mu m InGaAs/InGaAlAs multiple quantum well laser diodes
Czotscher, K.; Weisser, S.; Länge, R.; Benz, W.; Burkhard, H.; Hillmer, H.; Steinhagen, F.; Kiefer, R.; Lösch, R.; Pletschen, W.; Walcher, H.; Walther, M.; Rosenzweig, J. | Konferenzbeitrag |
| 1997 | Switching window of picosecond pulse switching using four-wave mixing in semiconductor-optical amplifiers
Schmidt, C.; Diez, S.; Ludwig, R.; Weber, H.G. | Konferenzbeitrag |
| 1997 | Uncooled high-temperature (130 deg C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s
Czotscher, K.; Larkins, E.C.; Weisser, S.; Benz, W.; Daleiden, J.; Fleissner, J.; Maier, M.; Ralston, J.D.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1996 | Hybrid integration of laser diode chips on a glass substrate
Cabon, B.; Hilt, A.; Vilcot, A.; Czotscher, K.; Weisser, S.; Berceli, T. | Konferenzbeitrag |
| 1996 | InGaAsP/InP 1.55-micron lasers with chemically assisted ion beam-etched facets
Daleiden, J.; Eisele, K.; Keller, R.; Vollrath, G.; Fiedler, F.; Ralston, J.D. | Zeitschriftenaufsatz |
| 1995 | New developments and applications of tunable IR lead salt lasers
Tacke, M. | Zeitschriftenaufsatz |
| 1995 | Simultaneous measurement of the linewidth, linewidth enhancement factor alpha , and FM and AM response of a semiconductor laser
Kruger, U.; Kruger, K. | Zeitschriftenaufsatz |
| 1994 | 5 Gbit/s optical switching between two injection locked modes of a semiconductor laser
Weich, K.; Patzak, E.; Horer, I.; As, D.J.; Eggemann, R.; Mohrle, M. | Konferenzbeitrag |
| 1994 | Band structure engineering in strained semiconductor lasers
O'Reilly, E.P.; Adams, A.R. | Zeitschriftenaufsatz |
| 1994 | Effects of strain and GaInP2 superlatice ordering on laser polarization.
Forstmann, G.G.; Barth, F.; Schweizer, H.; Moser, M.; Geng, C. | Zeitschriftenaufsatz |
| 1994 | Emblossed-Grating Lead Chalcogenide Buried-Waveguide Distributed-Feedback Lasers
Fach, M.A.; Böttner, H.; Schlereth, K.-H.; Tacke, M. | Zeitschriftenaufsatz |
| 1994 | Guided modes and far-field patterns of lead chalcogenide buried heterostructure laser diodes
Agne, M.; Lambrecht, A.; Tacke, M.; Schiessl, U. | Zeitschriftenaufsatz |
| 1994 | Lead chalcogenide implanted diode lasers in CW operation above 77 K
Xu, J.; Lambrecht, A.; Tacke, M. | Zeitschriftenaufsatz |
| 1994 | Quantum cascade laser has no role for holes.
O'Reilly, E.P. | Zeitschriftenaufsatz |
| 1993 | 7.4 Gbit/s monolithically integrated GaAs/AlGaAs laser diode-laser driver structure.
Hornung, J.; Wang, Z.-G.; Bronner, W.; Olander, E.; Köhler, K.; Ganser, P.; Raynor, B.; Benz, W.; Ludwig, M. | Zeitschriftenaufsatz |
| 1993 | Alpha-factor improvements in high-speed p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1992 | 15 Gbit/s integrated laser diode driver using 0,3 mym gate length quantum well transistors.
Nowotny, U.; Gotzeina, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Kaufel, G.; Köhler, K.; Wang, Z.-G. | Zeitschriftenaufsatz |
| 1992 | 18 Gbit/s monolithically integrated 2 to 1 multiplexer and laser driving using 0.3 mym gate length quantum well hemt's.
Nowotny, U.; Bronner, W.; Hofmann, P.; Hülsmann, A.; Raynor, B.; Schneider, J.; Berroth, M.; Köhler, K.; Wang, Z.-G. | Zeitschriftenaufsatz |
| 1992 | Comparison of ultrahigh-speed 30 GHz undoped and p-doped In0.35Ga0.65As/GaAs MQW lasers.
Schönfelder, A.; Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Fleissner, J.; Tasker, P.J.; Rosenzweig, J. | Konferenzbeitrag |
| 1992 | Efficient high-speed direct modulation in p-doped In0.35Ga0.65As/GaAs multiquantum well lasers.
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Zeitschriftenaufsatz |
| 1992 | Embossed grating lead chalcogenide distributed-feedback lasers.
Schlereth, K.-H.; Böttner, H. | Zeitschriftenaufsatz |
| 1992 | Embossed monomode single heterostructure distributed feedback lead chalcogenide diode lasers.
John, J.; Fach, A.; Böttner, H.; Tacke, M. | Zeitschriftenaufsatz |
| 1992 | High-frequency characterization of 30 GHz p-type modulation-doped In0.35Ga0.65As/GaAs MQW lasers
Weisser, S.; Ralston, J.D.; Larkins, E.C.; Esquivias, I.; Tasker, P.J.; Fleissner, J.; Rosenzweig, J. | Konferenzbeitrag |
| 1992 | Influence of facet reflectivity on the differential gain and K-factor in high-speed GaAs/AlGaAs and InGaAs/GaAs MQW lasers
Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Schönfelder, A.; Larkins, E.C.; Fleissner, J. | Konferenzbeitrag |
| 1992 | Mid IR diode lasers for diode laser trace gas analysis
Tacke, M. | Konferenzbeitrag |
| 1992 | Modelling and characterization of high-speed GaAs and In0.35Ga0.65As multiple-quantum-well laser diodes
Schönfelder, A.; Weisser, S.; Esquivias, I.; Ralston, J.D.; Rosenzweig, J.; Gallagher, D.F.G. | Konferenzbeitrag |
| 1991 | High-frequency intensity noise of lead-salt diode lasers.
Fischer, H.; Tacke, M. | Zeitschriftenaufsatz |
| 1991 | Optical signal processing using semiconductor laser amplifiers
Weber, H.G.; Grosskopf, G.; Ludwig, R.; Patzak, E.; Schnabel, R. | Konferenzbeitrag |
| 1991 | Transparent all-optical coherent-multi-carrier 4*2 switching node
Braun, R.-P.; Bachus, E.-J.; Caspar, C.; Foisel, H.-M.; Strebel, B. | Konferenzbeitrag |
| 1991 | Vertically compact 15 GHz GaAs/AlGaAs multiple quantum well laser grown by molecular beam epitaxy.
Ralston, J.D.; Tasker, P.J.; Zappe, H.P.; Esquivias, I.; Fleissner, J.; Gallagher, D.F.G. | Zeitschriftenaufsatz |
| 1986 | Investigation of linewidth and side-mode suppression for a DBR laser with integrated passive waveguide
Meissner, P.; Patzak, E. | Zeitschriftenaufsatz |
| 1986 | Reliable laboratory transmitter with submegahertz linewidth
Wenke, G.; Patzak, E.; Meissner, P. | Zeitschriftenaufsatz |
| 1985 | A split-step Fourier transform based analysis of the spontaneous emission factor
Yevick, D. | Zeitschriftenaufsatz |
| 1983 | Polarisation-maintaining single-mode-fibre resonator
Bachus, E.-J.; Braun, R.-P.; Strebel, B. | Zeitschriftenaufsatz |