| | |
---|
2020 | Evidence of strong electron-phonon interaction in a GaN-based quantum cascade emitter Hofstetter, Daniel; Beck, Hans; Epler, John E.; Kirste, Lutz; Bour, David P. | Zeitschriftenaufsatz |
2007 | Measurement of the internal quantum efficiency of InGaN quantum wells Laubsch, A.; Sabathil, M.; Bruederl, G.; Wagner, J.; Strassburg, M.; Baur, E.; Braun, H.; Schwarz, U.T.; Lell, A.; Lutgen, S.; Linder, N.; Oberschmid, R.; Hahn, B. | Konferenzbeitrag |
1997 | Strain compensated GaInAs/AlInAs tunnelling barrier MQW structure for polarisation independent optical switching Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Mörl, L.; Weinert, C.M. | Konferenzbeitrag |
1996 | Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures Reier, F.W.; Bornholdt, C.; Hoffmann, D.; Kappe, F.; Mörl, L. | Konferenzbeitrag |
1996 | Joint electrorefraction and electroabsorption in MQWs for digital switching with extremely low cross talk (< -45 dB) Hoffman, D.; Bornholdt, C.; Kappe, F.; Mörl, L.; Reier, F.-W.; Sigmund, A. | Konferenzbeitrag |
1995 | Fast 2*2 Mach-Zehnder optical space switches using InGaAsP-InP multiquantum-well structures Agrawal, N.; Weinert, C.M.; Ehrke, H.-J.; Mekonnen, G.G.; Franke, D.; Bornholdt, C.; Langenhorst, R. | Zeitschriftenaufsatz |
1994 | High-speed optical 2*2 space switch on InP with travelling wave electrodes Kappe, F.; Bornholdt, C.; Mekonnen, G.G.; Ehrke, H.J.; Reier, F.-W.; Hoffmann, D. | Konferenzbeitrag |