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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2003Optical evaluation of spatial carrier concentration fluctuations in doped InP substrates
Baeumler, M.; Diwo, E.; Jantz, W.; Sahr, U.; Müller, G.; Grant, I.
Konferenzbeitrag
20022K PL topography of silicon doped VGf-GaAs wafers
Baeumler, M.; Maier, M.; Herres, N.; Bünger, T.; Stenzenberger, J.; Jantz, W.
Zeitschriftenaufsatz
2002Photoluminescence topography of sulfur doped 2'' InP grown by the vertical gradient freeze technique
Sahr, U.; Mueller, G.; Grant, I.; Baeumler, M.; Jantz, W.
Konferenzbeitrag
2002Photoluminescence topography, PICTS and microwave conductivity investigation of EL6 in GaAs
Steinegger, T.; Gründig-Wendrock, B.; Baeumler, M.; Jurisch, M.; Jantz, W.; Niklas, J.
Zeitschriftenaufsatz
2000Quantitative topographic assessment of Cu incorporation in GaAs
Baeumler, M.; Stibal, R.; Stolz, W.; Steinegger, T.; Jurisch, M.; Maier, M.; Jantz, W.
Zeitschriftenaufsatz
1999Luminescence imaging - a well-established technique to study material- and device-related problems
Baeumler, M.; Fitz, C.,; Weinberg, U.; Wagner, J.; Jantz, W.
Zeitschriftenaufsatz
1993Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D.
Zeitschriftenaufsatz
1992Low temperature photoluminescence topography of MOCVD-grown InGaP, AlGaAs and AlGaAs/GaAs single quantum wells.
As, D.J.; Korf, S.; Wang, Z.M.; Bachem, K.H.; Jantz, W.; Windscheif, J.
Konferenzbeitrag
1992Photoluminescence microscopy investigation of lattice defects in epitaxial heterostructures
Wang, Z.M.; Baeumler, M.; Jantz, W.; Bachem, K.H.; Larkins, E.C.; Ralston, J.D.
Konferenzbeitrag
1991Variation of material parameters along the growth direction of liquid encapsulated Czochralski grown GaAs ingots
Stibal, R.; Jantz, W.; Wagner, J.; Windscheif, J.
Zeitschriftenaufsatz