Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020Pre-Deposition Interfacial Oxidation and Post-Deposition Interface Nitridation of LPCVD TEOS Used as Gate Dielectric on 4H-SiC
Lim, Minwho; Sledziewski, Tomasz; Rommel, Mathias; Erlbacher, Tobias; Kim, Hong-Ki; Kim, Seongjun; Shin, Hoon-Kyu; Bauer, Anton J.
Konferenzbeitrag
2018Gate oxide electrical stability of p-type diamond MOS capacitors
Loto, O.; Florentin, M.; Masante, N.; Donato, N.; Hicks, M.-L.; Pakpour-Tabrizi, A.C.; Jackman, R.B.; Zürbig, Verena; Godignon, B.; Eon, D.; Pernot, J.; Udrea, F.; Gheeraert, E.
Zeitschriftenaufsatz
2013High temperature reliability investigations up to 350 °C of gate oxid capacitors realized in a Silicon-on-Insulator CMOS-technology
Grella, Katharina; Dreiner, Stefan; Vogt, Holger; Paschen, Uwe
Konferenzbeitrag
2013Reliability investigations up to 350°C of gate oxid capacitors realized in a Silicon-on-Insulator CMOS-technology
Grella, Katharina; Dreiner, Stefan; Vogt, Holger; Paschen, Uwe
Zeitschriftenaufsatz