Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2020Evaluation of Inline High-Intensity Illumination Treatments against LeTID
Vahlman, H.; Roder, S.; Krauß, K.; Nekarda, J.; Rein, S.
2019The electrical properties of high performance multicrystalline silicon and mono-like silicon: Material limitations and cell potential
Sio, Hang Cheong; Phang, Sieu Pheng; Fell, Andreas; Wang, Haitao; Zheng, Peiting; Chen, D.K.; Zhang, Xinyu; Zhang, Tao; Wang, Qi; Jin, Hao; Macdonald, Daniel
2016Optimized Grain Size of Seed Plates for High Performance Multicrystalline Silicon
Krenckel, P.; Riepe, S.; Schindler, F.; Strauch, T.
2015Development of multicrystalline silicon for 20 % efficient n-Type solar cells
Riepe, S.; Krenckel, P.; Schindler, F.; Schmid, C.; Strauch, T.; Benick, J.; Schubert, M.C.
2012Damage and breakage of silicon wafers during impact loading on the wafer edge
Kaule, F.; Koepge, R.; Schönfelder, S.
2012Effect of metal-wrap-through holes and etching parameters on the strength of multicrystalline silicon wafers
Oswald, M.; Loewenstein, T.; Schubert, G.; Schoenfelder, S.
2012Fast method to determine the structural defect density of 156 x 156 mm2 Mc-Si wafers
Bakowskie, R.; Kesser, G.; Richter, R.; Lausch, D.; Eidner, A.; Clemens, P.; Petter, K.
Konferenzbeitrag, Zeitschriftenaufsatz
2012Influence of crucible and coating on the contamination of directionally solidified silicon
Kwapil, W.; Zuschlag, A.; Reis, I.; Schwirtlich, I.; Meyer, S.; Zierer, R.; Krain, R.
1993Computer modelling of a silicon ingot casting process and growth of high quality test ingots
Schätzle, P.; Haas, F.; Zöllner, T.; Eyer, A.; Ockewitz, A.; Stöckl, H.
1991Localization of the solid/liquid interface during directional solidification of silicon by a pulse-echo ultrasonic technique
Haas, F.; Schätzle, P.; Knobel, R.M.; Eyer, A.; Paul, M.
1991Texture etching of multicrystalline silicon
Kaiser, U.; Kaiser, M.; Schindler, R.