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| 2012 | In Situ TEM investigations on thermoelectric Bi2Te3/Sb2Te3 multilayers
Schürmann, U.; Winkler, M.; König, J.; Liu, X.; Duppel, V.; Bensch, W.; Böttner, H.; Kienle, L. | Zeitschriftenaufsatz |
| 2012 | Threading dislocation propagation in AlGaN/GaN based HEMT structures grown on Si (111) by plasma assisted molecular beam epitaxy
Manuel, J.M.; Morales, F.M.; Garcia, R.; Aidam, R.; Kirste, L.; Ambacher, O. | Zeitschriftenaufsatz |
| 2011 | Growth and characterization of InAlN layers nearly lattice-matched to GaN
Mánuel, J.M.; Morales, F.M.; Lozano, J.G.; García, R.; Lim, T.; Kirste, L.; Aidam, R.; Ambacher, O. | Zeitschriftenaufsatz, Konferenzbeitrag |
| 2010 | GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O. | Zeitschriftenaufsatz |
| 2010 | InN nanocolumns
Grandal, J.; Sánchez-García, M.A.; Calleja, E.; Lazic, S.; Gallardo, E.; Calleja, J.M.; Luna, E.; Trampert, A.; Niebelschütz, F.; Cimalla, V.; Ambacher, O. | Aufsatz in Buch |
| 2010 | Reproducible and uniform growth of GaN based HEMTs on 4 inch SiC by plasma assisted molecular beam epitaxy suitable for production
Aidam, R.; Waltereit, P.; Kirste, L.; Dammann, M.; Quay, R. | Zeitschriftenaufsatz |
| 2009 | Output power enhancement of 100% for quaternary GaInAsSb/AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme
Manz, C.; Köhler, K.; Kirste, L.; Yang, Q.K.; Rösener, B.; Moser, R.; Rattunde, M.; Wagner, J. | Zeitschriftenaufsatz |
| 2008 | Growth of thick films CdTe from the vapor phase
Sorgenfrei, R.; Greiffenberg, D.; Bachem, K.H.; Kirste, L.; Zwerger, A.; Fiederle, M. | Zeitschriftenaufsatz |
| 2008 | Plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors
Aidam, R.; Kirste, L.; Kunzer, M.; Müller, S.; Waltereit, P. | Zeitschriftenaufsatz |
| 2007 | Epitaxial growth of GaInAs/AlGaAsSb quantum cascade lasers
Manz, C.; Yang, Q.K.; Kirste, L.; Köhler, K. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2007 | Solid source MBE growth on InP-based DHBTs for high-speed data communication
Aidam, R.; Lösch, R.; Driad, R.; Schneider, K.; Makon, R.E. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2006 | GaSb-based tapered diode lasers at 1.93 µm with 1.5-W nearly diffraction-limited power
Pfahler, C.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Rattunde, M.; Schmitz, J.; Wagner, J. | Zeitschriftenaufsatz |
| 2006 | Molecular beam epitaxy and doping of AlN at high growth temperatures
Boger, R.; Fiederle, M.; Kirste, L.; Maier, M.; Wagner, J. | Zeitschriftenaufsatz |
| 2006 | Multi-wafer MBE grown InP-based DHBTs for millimeterwave and digital applications
Driad, R.; Lösch, R.; Schneider, K.; Makon, R.E.; Ludwig, M.; Weimann, G. | Zeitschriftenaufsatz |
| 2005 | Bonding of nitrogen in dilute InAsN and high In-content GaInAsN
Wagner, J.; Köhler, K.; Ganser, P.; Maier, M. | Zeitschriftenaufsatz |
| 2005 | Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
Walther, M.; Schmitz, J.; Rehm, R.; Kopta, S.; Fuchs, F.; Fleißner, J.; Cabanski, W.; Ziegler, J. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2005 | High temperature (T >= 400 K) operation of strain-compensated quantum cascade lasers with thin InAs insertion layers and AlAs blocking barriers
Yang, Q.K.; Mann, C.; Fuchs, F.; Köhler, K.; Bronner, W. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2005 | High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode
Manz, C.; Yang, Q.K.; Köhler, K.; Maier, M.; Kirste, L.; Wagner, J.; Send, W.; Gerthsen, D. | Zeitschriftenaufsatz |
| 2005 | MBE growth of mid-IR type-II interband laser diodes
Schmitz, J.; Mermelstein, C.; Kiefer, R.; Walther, M.; Wagner, J. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2005 | Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing
Pavelescu, E.-M.; Wagner, J.; Komsa, H.-P.; Rantala, T.; Dumitrescu, M.; Pessa, M. | Zeitschriftenaufsatz |
| 2004 | High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 µm wavelength range
Wagner, J.; Serries, D.; Köhler, K.; Ganser, P.; Maier, M.; Kirste, L.; Kiefer, R. | Konferenzbeitrag |
| 2004 | Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers
Aidam, R.; Lösch, R.; Walther, M.; Driad, R.; Kallenbach, S. | Konferenzbeitrag |
| 2004 | The realization of long-wavelength (lambda <= 2.3 µm) Ga(1-x)In(x)As(1-y)N(y) quantum wells on InP by molecular-beam epitaxy
Köhler, K.; Wagner, J.; Ganser, P.; Serries, D.; Geppert, T.; Maier, T.; Kirste, L. | Zeitschriftenaufsatz |
| 2003 | Bonding of nitrogen in dilute GaInAsN and AlGaAsN studied by Raman spectroscopy
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M. | Zeitschriftenaufsatz |
| 2003 | Quantitative assessment of Al-to-N bonding in dilute Al(0.33)Ga(0.67)As(1-y)N(y)
Wagner, J.; Geppert, T.; Köhler, K.; Ganser, P.; Maier, M. | Zeitschriftenaufsatz |
| 2002 | Preferential formation of Al-N bonds in low N-content AlGaAsN
Geppert, T.; Wagner, J.; Köhler, K.; Ganser, P.; Maier, M. | Zeitschriftenaufsatz |
| 2001 | Growth and layer structure optimization of 2.26 µm (AlGaIn)(AsSb) diode lasers for room temperature operation
Simanowski, S.; Mermelstein, C.; Walther, M.; Herres, N.; Kiefer, R.; Rattunde, M.; Schmitz, J.; Wagner, J.; Weimann, G. | Zeitschriftenaufsatz |
| 2001 | Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
Künzel, H.; Biermann, K.; Nickel, D.; Elsaesser, T. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 2000 | Antimonidische III/V-Halbleiterheterostrukturen für Infrarot-Diodenlaser
Simanowski, S. | Dissertation |
| 2000 | Strain adjustment in (GaIn)(AsSb)/(AlGa)(AsSb) QWs for 2.3.-2.7. µm laser structures
Simanowski, S.; Herres, N.; Mermelstein, C.; Kiefer, R.; Schmitz, J.; Walther, M.; Wagner, J.; Weimann, G. | Zeitschriftenaufsatz |
| 1999 | Arsenic incorporation in molecular beam epitaxy (MBE) grown (AlGaIn)(AsSb) layers for 2.0-2.5 mu m laser structures on GaSb substrates
Simanowski, S.; Walther, M.; Schmitz, J.; Kiefer, R.; Herres, N.; Fuchs, F.; Maier, M.; Mermelstein, C.; Wagner, J.; Weimann, G. | Zeitschriftenaufsatz |
| 1999 | Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP
Biermann, K.; Hase, A.; Kunzel, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 1999 | Solid-solubility limits of Be in molecular beam epitaxy grown Al(x)Ga(1-x)As layers and short-period superlattices
Gaymann, A.; Maier, M.; Köhler, K. | Zeitschriftenaufsatz |
| 1997 | Barrier composition dependence of the emission properties of AlGaInAs/GaInAs quantum wells grown by molecular beam epitaxy
Hase, A.; Chew-Walter, A.; Kuenzel, H. | Zeitschriftenaufsatz |
| 1996 | GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits
Schlaak, W.; Passenberg, W.; Schramm, C.; Mekonnen, G.G.; Umbach, A.; Ebert, W.; Bach, H.-G. | Konferenzbeitrag |
| 1996 | MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration
Passenberg, W.; Schlaak, W.; Umbach, A. | Konferenzbeitrag |
| 1995 | Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing
Kunzel, H.; Bottcher, J.; Hase, A.; Hofsass, V.; Kaden, C.; Schweizer, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 1995 | Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Strahle, S.; Kohn, E. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 1994 | Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
Hase, A.; Kunzel, H.; Zahn, D.R.T.; Richter, W. | Zeitschriftenaufsatz |
| 1994 | Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Heedt, C. | Zeitschriftenaufsatz |
| 1994 | Interface formation and surface Fermi level pinning in GaSb and InSb grown on GaAs by molecular beam epitaxy
Wagner, J.; Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P. | Konferenzbeitrag |
| 1994 | Interface formation in InAs/AlSb and InAs/AlAs/AlSb quantum wells grown by molecular-beam epitaxy
Wagner, J.; Schmitz, J.; Behr, D.; Ralston, J.D.; Koidl, P. | Zeitschriftenaufsatz |
| 1993 | Dünnschicht-Solarzellen aus Galliumarsenid
Wettling, W. | Konferenzbeitrag |
| 1993 | Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 1993 | Molecular beam epitaxy of laterally structured lead chalcogenides for the fabrication of buried heterostructure lasers.
Lambrecht, A.; Böttner, H.; Agne, M.; Kurbel, R.; Fach, A.; Halford, B.; Schießl, U.; Tacke, M.; Schiessl, U. | Zeitschriftenaufsatz |
| 1993 | Nucleation, relaxation and redistribution of Si layers in GaAs.
Brandt, O.; Crook, G.; Ploog, K.; Bierwolf, R.; Hohenstein, M.; Maier, M.; Wagner, J. | Zeitschriftenaufsatz |
| 1992 | Compositional analysis of MBE pseudomorphic InGaAs/AlGaAs/GaAs structures by determination of film thickness with SIMS
Höpner, A.; As, D.J.; Köhler, K.; Maier, M. | Konferenzbeitrag |
| 1992 | Epitaxial growth of laterally structured lead chalcogenide lasers
Lambrecht, A.; Fach, A.; Kurbel, R.; Halford, B.; Böttner, H.; Tacke, M. | Konferenzbeitrag |
| 1991 | Crystal-field splittings of Er3+-4f11- in molecular beam epitaxially grown ErAs/GaAs.
Schneider, J.; Müller, H.D.; Fuchs, F.; Thonke, K.; Dörnen, A.; Ralston, J.D. | Zeitschriftenaufsatz |
| 1991 | Dopant incorporation and activation in highly Si doped GaAs layers grown by atomic layer molecular beam epitaxy
Silveira, J.P.; Briones, F.; Ramsteiner, M.; Wagner, J. | Konferenzbeitrag |
| 1991 | Molecular beam epitaxy of Pb1-xSrxSe for the use in IR devices
Kuhn, S.; Evers, J.; Böttner, H.; Herres, N.; Lambrecht, A.; Spanger, B.; Tacke, M. | Zeitschriftenaufsatz |
| 1991 | Picosecond optical nonlinearity in lead chalcogenide semiconductors.
Buhleier, R.; Elsaesser, T.; Klann, R.; Lambrecht, A. | Zeitschriftenaufsatz |
| 1990 | Cathodoluminescence study of erbium in La1-xErxF3 epitaxial layers on Si-111-.
Müller, H.D.; Schneider, J.; Lüth, H.; Strümpler, R. | Zeitschriftenaufsatz |
| 1990 | Comparative investigation of the interface quality of GaAs/AlGaAs quantum wells grown by MBE.
Schweizer, T.; Bachem, K.H.; Voigt, A.; Strunk, H.P.; Ganser, P.; Köhler, K.; Maier, M.; Wagner, J. | Zeitschriftenaufsatz |
| 1990 | Investigation of the interface of GaAs/AlGaAs heterostructures.
Schweizer, T.; Bachem, K.H.; As, D.J.; Ganser, P.; Köhler, K. | Zeitschriftenaufsatz |
| 1990 | Optimization of extremely highly p-doped In0.53Ga0.47As:Be contact layers grown by MBE
Passenberg, W.; Harde, P.; Kunzel, H.; Trommer, D. | Konferenzbeitrag |
| 1990 | Study of ErAs/GaAs strained-layer structures using optical absorption.
Ralston, J.D.; Fuchs, F.; Schneider, J.; Schmälzlin, J. | Zeitschriftenaufsatz |
| 1989 | Monitoring of gaseous pollutants by tunable diode lasers '88
: Grisar, R.; Schmidtke, G.; Tacke, M.; Restelli, G. | Tagungsband |
| 1987 | Monitoring of gaseous pollutants by tunable diode lasers '86
: Grisar, R.; Schmidtke, G.; Tacke, M.; Restelli, G. | Tagungsband |
| 1985 | Molecular beam epitaxy of III-V compounds
Kunzel, H. | Konferenzbeitrag |