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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2015Impact of acceptor concentration on electrical properties and density of interface states of 4H-SiC n-metal-oxide-semiconductor field effect transistors studied by Hall effect
Ortiz, Guillermo; Strenger, Christian; Uhnevionak, Viktoryia; Burenkov, Alexander; Bauer, Anton J.; Pichler, Peter; Cristiano, Fuccio; Bedel-Pereira, Elena; Mortet, Vincent
Zeitschriftenaufsatz
2010Electronic structure and transport properties of transition-metaI/ SrTi03(100) heterojunctions
Kalivoda, E.M.
Konferenzbeitrag
2009Schottky barriers at transition-metal/SrTiO3(001) interfaces
Mrovec, M.; Albina, J.-M.; Meyer, B.; Elsässer, C.
Zeitschriftenaufsatz
1996Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W.
Konferenzbeitrag
1993InP based InGaAs-JFET with delta-doped channel
Mekonnen, G.G.; Passenberg, W.; Schramm, C.; Trommer, D.; Unterborsch, G.
Konferenzbeitrag
1989The electronic states of the Si-SiO2 interface.
Klausmann, E.; Fahrner, W.R.; Bräunig, D.
Aufsatz in Buch
1989The intrinsic states and fixed charges of the Si-SiO2 interface.
Klausmann, E.; Fahrner, W.R.; Bräunig, D.
Aufsatz in Buch