Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Correlation of optical properties and interface morphology in type-II semiconductor heterostructures
Rost, Luise; Gies, Sebastian; Stein, Markus; Fuchs, Christian; Nau, Siegfried; Kükelhan, Pirmin; Volz, Kerstin; Stolz, Wolfgang; Koch, Martin; Heimbrodt, Wolfram
Zeitschriftenaufsatz
2017Mesa Separation of GaInP Solar Cells by Picosecond Laser Ablation
Weber, J.; Klinger, V.; Brand, A.; Gutscher, S.; Wekkeli, A.; Mondon, A.; Oliva, E.; Dimroth, F.
Zeitschriftenaufsatz
2016Integrated Power and Data Transceiver Devices for Power-by-Light Systems - A Concept Study
Helmers, H.; Lackner, D.; Siefer, G.; Oliva, E.; Dimroth, F.; Bett, A.W.
Konferenzbeitrag
2016Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Transient I-V Measurement Set-up for Photovoltaic Laser Power Converters under Monochromatic Irradiance
Reichmuth, S.K.; Helmers, H.; Garza, C.E.; Vahle, D.; Boer, M. de; Stevens, L.; Mundus, M.; Helmers, H.; Bett, A.W.; Siefer, G.
Konferenzbeitrag
2013Generation and detection of terahertz radiation up to 4.5 THz by low-temperature grown GaAs photoconductive antennas excited at 1560 nm
Rämer, Jan-Martin; Ospald, Frank; Freymann, Georg von; Beigang, René
Zeitschriftenaufsatz
2007Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AIAs/AIAsSb
Grimm, C.V.-B.; Priegnitz, M.; Winnerl, S.; Schneider, H.; Helm, M.; Biermann, K.; Künzel, H.
Zeitschriftenaufsatz
2007Vertically coupled microring laser devices based on InP using BCB waferbonding
Hamacher, M.; Troppenz, U.; Heidrich, H.; Dragoi, V.
Konferenzbeitrag
2005The evolution of the electric field in an optically excited semiconductor superlattice
Lisauskas, A.; Blöser, C.; Hummel, A.B.; Sachs, R.; Roskos, H.G.; Juozapavicius, A.; Valusis, G.; Köhler, K.
Zeitschriftenaufsatz
2005Time-resolved photocurrent spectroscopy of the evolution of the electric field in optically excited superlattices and the prospects for Bloch gain
Lisauskas, A.; Blöser, C.; Sachs, R.; Roskos, H.G.; Juozapavicius, A.; Valusis, G.; Köhler, K.
Zeitschriftenaufsatz
2002All-active InGaAsP/InP ring cavities for widespread functionalities in the wavelength domain
Troppenz, U.; Hamacher, M.; Rabus, D.G.; Heidrich, H.
Konferenzbeitrag
2002Box-like filter response of triple ring resonators with integrated SOA sections based on GaInAsP/InP
Rabus, D.G.; Hamacher, M.; Heidrich, H.; Troppenz, U.
Konferenzbeitrag
2002High-performance all-active tapered 1550 nm InGaAsP-BH-FP lasers
Möhrle, M.; Roehle, H.; Sigmund, A.; Suna, A.; Reier, F.
Konferenzbeitrag
2002High-Q channel-dropping filters using ring resonators with integrated SOAs
Rabus, D.G.; Hamacher, M.; Troppenz, U.; Heidrich, H.
Zeitschriftenaufsatz
2002Investigation of macroscopic uniformity during CH4/H2 reactive ion etching of InP and its improvement by use of a guard ring
Janiak, K.; Niggebrugge, U.
Zeitschriftenaufsatz
2002Low-temperature-grown 1.55 mu m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response
Kuenzel, H.; Biermann, K.; Boettcher, J.; Harde, P.; Kurtzweg, M.; Schneider, R.; Neumann, W.; Nickel, D.; Reimann, K.; Woerner, M.; Elsaesser, T.
Konferenzbeitrag
2002MOVPE-based in-situ etching of InP epitaxial heterostructures
Wolfram, P.; Franke, D.; Ebert, W.; Grote, N.
Konferenzbeitrag
2002Optoelectronic/photonic integrated circuits on InP between technological feasibility and commercial success
Kaiser, R.; Heidrich, H.
Zeitschriftenaufsatz
2002Zener tunneling in superlattices in a magnetic field
Meinhold, D.; Leo, K.; Fromer, N.A.; Chemla, D.S.; Glutsch, S.; Bechstedt, F.; Köhler, K.
Zeitschriftenaufsatz
2001'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP ( lambda =1.53-1.55 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Zeitschriftenaufsatz
20011300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
Kovshb, A.R.; Maleev, N.A.; Sakharov, A.V.; Moeller, C.; Krestnikov, I.L.; Kovsh, A.R.; Mikhrin, S.S.; Zhukov, A.E.; Ustinov, V.M.; Passenberg, W.; Pawlowski, E.; Kuenzel, H.; Tsatsul'nikov, A.F.; Ledentsov, N.N.; Bimberg, D.; Alferov, Z.I.
Zeitschriftenaufsatz, Konferenzbeitrag
200150 GHz photoreceiver modules for RZ and NRZ modulation format comprising InP-OEICs
Bach, H.-G.; Schlaak, W.; Mekonnen, G.G.; Steingrüber, R.; Seeger, A.; Passenberg, W.; Ebert, W.; Jacumeit, G.; Eckhard, T.; Ziegler, R.; Beling, A.; Schmauss, B.; Munk, A.; Engel, T.; Umbach, A.
Konferenzbeitrag
2001Analysis of optical crosstalk within optoelectronic integrated circuits including lasers and photodetectors
Heidrich, H.; Kaiser, R.; Albrecht, P.; Fidorra, S.; Hamacher, M.; Rehbein, W.
Konferenzbeitrag, Zeitschriftenaufsatz
2001Fabrication of InGaAsP/InP ridge waveguide lasers with dry etched facets using chemically assisted ion beam etching and a simple photoresist mask
Paraskevopoulos, A.; Hensel, H.-J.; Molzow, W.-D.; Janiak, K.; Suryaputra, E.; Roehle, H.; Wolfram, P.; Ebert, W.
Konferenzbeitrag
2001High single-mode-yield multiple-wavelength DFB-laser arrays in the 1.55 mu m range
Kreissl, J.; Troppenz, U.; Rehbein, W.; Hüttl, B.; Lenz, E.; Venghaus, H.; Fidorra, F.
Konferenzbeitrag
2001Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
Künzel, H.; Biermann, K.; Nickel, D.; Elsaesser, T.
Konferenzbeitrag, Zeitschriftenaufsatz
2001MMI-coupled ring resonators in GaInAsP-InP
Rabus, D.G.; Hamacher, M.
Zeitschriftenaufsatz
2001Status of InP-based metal organic MBE with reference to conventional MBE and MOVPE
Kunzel, H.; Gibis, R.; Kaiser, R.; Malchow, S.; Schelhase, S.
Konferenzbeitrag
2000"On-wafer" surface implanted high power, picosecond pulse InGaAs/InP ( lambda -1.53-1.55 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Konferenzbeitrag
200040 GHz InP-based photoreceiver OEICs: Application for 40 Gb/s TDM systems and beyond
Bach, H.G.; Schlaak, W.; Mekonnen, G.G.; Umbach, A.; Schramm, C.; Unterborsch, G.; Passenberg, W.
Konferenzbeitrag
2000Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas
Schroeter-Janssen, H.; Roehle, H.; Franke, D.; Bochnia, R.; Harde, P.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
2000Conservation of low dark current of InGaAs photodiodes after NH3/HF etch with a BCB passivation layer
Schmidt, D.; Trommer, D.
Konferenzbeitrag
2000Coupled Bloch-phonon oscillations in GaAs/AlGaAs superlattices: theory and experiment
Dekorsy, T.; Bartels, A.; Kurz, H.; Ghosh, A.; Jönsson, L.; Wilkens, J.; Köhler, K.; Hey, R.; Ploog, K.
Zeitschriftenaufsatz
2000Detuned grating multi-section-RW-DFB-lasers for high speed optical signal processing
Möhrle, M.; Sartorius, B.; Bornholt, C.; Bauer, S.; Brox, O.; Sigmund, A.; Steingrüber, R.; Radziunas, M.; Wünsche, H.J.
Konferenzbeitrag
2000Direct observation of depolarization shift of the intersubband resonance
Graf, S.; Sigg, H.; Köhler, K.; Bächtold, W.
Zeitschriftenaufsatz
2000Direct Observation of dynamical screening of the intersubband resonance
Graf, S.; Sigg, H.; Köhler, K.; Bächtold, W.
Zeitschriftenaufsatz
2000Dynamics of Bloch oscillations under the influence of scattering and coherent plasmon coupling
Löser, F.; Kosevich, Y.; Köhler, K.; Leo, K.
Zeitschriftenaufsatz
2000Evolution of energy levels of a GaAs/AlGaAs superlattice under the influence of a strong magnetic field
Bauer, T.; Hummel, A.; Roskos, H.; Köhler, K.
Zeitschriftenaufsatz
2000GaN static induction transistor fabrication
Weimann, G.; Eastman, L.F.; Obloh, H.; Köhler, K.
Konferenzbeitrag
2000Generation and manipulation of Bloch wave packets
Löser, F.; Sudzius, M.; Lyssenko, V.; Kosevich, Y.; Dignam, M.; Köhler, K.; Leo, K.
Zeitschriftenaufsatz
2000High-power, picosecond pulse generation from surface implanted InGaAsP/InP ( lambda =1.53 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Konferenzbeitrag
2000Hydrogen passivation in InP:Zn resulting from reactive ion etching during laser stripe formation
Kreissl, J.; Moehrle, M.; Sigmund, A.; Bochnia, R.; Harde, P.; Ulrici, W.
Konferenzbeitrag
2000Impact of a conducting interface layer on the characteristics of integrated InP photoreceivers
Schramm, C.; Mekonnen, G.G.; Bach, H.-G.; Unterborsch, G.; Schlaak, W.; Ebert, W.; Wolfram, P.
Konferenzbeitrag
2000InP photoreceiver OEICs for high-speed optical transmission systems
Mekonnen, G.G.; Schlaak, W.; Bach, H.-G.; Engel, T.; Schramm, C.; Umbach, A.
Konferenzbeitrag
2000InP-based OEIC fabrication technology for 40 Gbit/s broadband and 38/60 GHz narrowband photoreceivers
Schlaak, W.; Engel, T.; Umbach, A.; Passenberg, W.; Steingrüber, R.; Seeger, A.; Schramm, C.; Mekonnen, G.G.; Unterborsch, G.; Bach, H.-G.; Bimberg, D.
Konferenzbeitrag
2000InP-based pin TWA photoreceivers with low group delay scatter over 40 GHz bandwidth
Bach, H.-G.; Schlaak, W.; Mekonnen, G.G.; Seeger, A.; Steingrüber, R.; Schramm, C.; Jacumeit, G.; Ziegler, R.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Ebert, W.; Eckardt, T.
Konferenzbeitrag
2000Integratable high-power small-linewidth lambda /4 phase-shifted 1.55 mu m InGaAsP-InP-ridge-waveguide DFB-lasers
Mohrle, M.; Sigmund, A.; Kreissl, J.; Reier, F.; Steingrüber, R.; Rehbein, W.; Roehle, H.
Konferenzbeitrag
2000MBE growth of single crystalline AlInAs/GaInAs MQWs at the low growth temperature limit
Biermann, K.; Kunzel, H.; Elsasser, T.
Konferenzbeitrag
2000MOMBE selective infill growth of InP/GaInAs for quantum dot formation
Gibis, R.; Schelhase, S.; Steingrüber, R.; Urmann, G.; Kunzel, H.; Thiel, S.; Stier, O.; Bimberg, D.
Konferenzbeitrag, Zeitschriftenaufsatz
2000MOMBE: Superior epitaxial growth for InP-based monolithically integrated photonic circuits
Gibis, R.; Kizuki, H.; Albrecht, P.; Harde, P.; Urmann, G.; Kaiser, R.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
2000Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications
Hamacher, M.; Kaiser, R.; Heidrich, H.; Albrecht, P.; Borchert, B.; Janiak, K.; Löffler, R.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.
Konferenzbeitrag
2000MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride
Wolfram, P.; Ebert, W.; Kreissl, J.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
2000Optical crosstalk within monolithic transceiver ICs on GaInAsP/InP
Kaiser, R.; Hamacher, M.; Heidrich, H.; Albrecht, P.; Janiak, K.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.
Konferenzbeitrag
2000Optimizing Fe-doped semi-insulating optical waveguide layers: Detection of interface layer conduction
Bach, H.-G.; Ebert, W.; Umbach, A.; Schramm, C.; Hubsch, R.; Seeger, A.
Konferenzbeitrag
19991.55 mu m balanced mixer receiver OEIC with 15 GHz bandwidth
Unterborsch, G.; Schramm, C.; Hubsch, R.; Mekonnen, G.G.; Seeger, A.; Trommer, D.; Umbach, A.
Konferenzbeitrag
199937 GHz bandwidth InP-based photoreceiver OEIC suitable for data rates up to 50 Gb/s
Mekonnen, G.G.; Schlaak, W.; Bach, H.-G.; Steingrüber, R.; Seeger, A.; Enger, Th.; Passenberg, W.; Umbach, A.; Schramm, C.; Unterborsch, G.; Waasen, S. van
Zeitschriftenaufsatz
199940 Gbit/s photoreceiver modules comprising InP-OEICs for RZ and NRZ coded TDM system applications
Bach, H.-G.; Schlaak, W.; Unterborsch, G.; Mekonnen, G.G.; Jacumeit, G.; Ziegler, R.; Steingrüber, R.; Seeger, A.; Engel, T.; Umbach, A.; Schramm, C.; Passenberg, W.
Konferenzbeitrag
1999Bloch oscillations in semiconductor superlattices
Lyssenko, V.G.; Sudzius, M.; Löser, F.; Valusis, G.; Hasche, T.; Leo, K.; Dignam, M.M.; Köhler, K.
Aufsatz in Buch
1999Cyclotron mass of correlated two-dimensional electron GAS systems in GaAs
Manger, M.; Batke, E.; Köhler, K.; Ganser, P.
Konferenzbeitrag
1999InP integrated receivers for narrow band radio over fiber systems
Engel, T.; Unterborsch, G.
Konferenzbeitrag
1999Monolithic integration of III-V microcavity LEDs on silicon drivers using conformal epitaxy
Gerard, B.; Marcadet, X.; Etienne, P.; Pribat, D.; Friedrich, D.; Eichholz, J.; Bernt, H.; Carlin, J.-F.; Ilegems, M.
Konferenzbeitrag
1999A new fiber-chip coupling concept for reusable multipurpose packaging suitable for up to 45 GHz bandwidth
Fischer, U.H.P.; Eckhardt, T.; Jacumeit, G.; Kilk, A.; Mekonnen, G.G.; Pech, D.; Ziegler, R.
Konferenzbeitrag
1999A novel flexible, reliable and easy to use technique for the fabrication of optical spot size converters for InP based PICs
Trommer, D.; Steingrüber, R.; Löffler, R.; Umbach, A.
Konferenzbeitrag
1999Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP
Biermann, K.; Hase, A.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1999Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS
Harde, P.; Gibis, R.; Kaiser, R.; Kizuki, H.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1999Technology of InP-based 1.55- mu m ultrafast OEMMICs: 40-Gbit/s broad-band and 38/60-GHz narrow-band photoreceivers
Umbach, A.; Engel, T.; Bach, H.-G.; Waasen, S. van; Droge, E.; Strittmatter, A.; Ebert, W.; Passenberg, W.; Steingrüber, R.; Schlaak, W.; Mekonnen, G.G.; Unterborsch, G.; Bimberg, D.
Zeitschriftenaufsatz
1999Transport parameters of 2D systems derived from microwave transmission experiments
Brensing, A.; Bauhofer, W.; Köhler, K.
Konferenzbeitrag
1999Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP
Mori, L.; Hoffmann, D.; Bornholdt, C.; Mekonnen, G.G.; Reier, F.
Konferenzbeitrag
199850 Gbit/s InP-based photoreceiver OEIC with gain flattened transfer characteristics
Bach, H.G.; Schlaak, W.; Mekonnen, G.G.; Steingrüber, R.; Seeger, A.; Engel, T.; Passenberg, W.; Umbach, A.; Schramm, C.; Unterborsch, G.
Konferenzbeitrag
199855 GHz dynamic frequency divider IC
Lao, Z.; Thiede, A.; Hornung, J.; Schlechtweg, M.; Lienhart, H.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Seibel, J.; Sedler, M.; Kaufel, G.
Zeitschriftenaufsatz
1998Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP
Engel, T.; Strittmatter, A.; Passenberg, W.; Seeger, A.; Steingrüber, R.; Mekonnen, G.G.; Unterborsch, G.; Bimberg, D.
Konferenzbeitrag
1998Effect of birefringence in a bulk semiconductor optical amplifier on four-wave mixing
Diez, S.; Schmidt, C.; Ludwig, R.; Weber, H.G.; Doussiere, P.; Ducellier, T.
Zeitschriftenaufsatz
1998Full-duplex WDM transceiver PICs
Hamacher, M.; Heidrich, H.; Kaiser, R.; Albrecht, P.; Ebert, W.; Malchow, S.; Möhrle, M.; Rehbein, W.; Schroeter-Janssen, H.; Stenzel, R.
Konferenzbeitrag
1998InGaAs photodetector with integrated biasing network for mm-wave applications
Trommer, D.; Umbach, A.; Unterborsch, G.
Konferenzbeitrag
1998Laser/waveguide integration utilizing selective area MOMBE regrowth for photonic IC applications
Kunzel, H.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Konferenzbeitrag
1998Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Zeitschriftenaufsatz
1998MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs
Kuenzel, H.; Gibis, R.; Kizuki, H.; Albrecht, P.; Ebert, S.; Harde, P.; Malchow, S.; Kaiser, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1998Monolithically integrated transceivers on InP: The development of a generic integration concept and its technological challenges
Kaiser, R.; Hamacher, M.; Heidrich, H.; Albrecht, P.; Ebert, W.; Gibis, R.; Künzel, H.; Löffler, R.; Malchow, S.; Möhrle, M.; Rehbein, W.; Schroeter-Janssen, H.
Konferenzbeitrag
1998Narrow-band photoreceiver OEIC on InP operating at 38 GHz
Engel, T.; Strittmatter, A.; Passenberg, W.; Umbach, A.; Schlaak, W.; Droge, E.; Seeger, A.; Steingrüber, R.; Mekonnen, G.C.; Unterborsch, G.; Bach, H.-G.; Bottcher, E.H.; Bimberg, D.
Zeitschriftenaufsatz
1998Polarisation insensitive meander-type wavelength demultiplexer with large tuning range
Trommer, D.; Arps, M.; Kreissl, J.; Steingrüber, R.; Ebert, W.; Venghaus, H.
Konferenzbeitrag
1998Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
1998Selective infill metalorganic molecular beam epitaxy of InP:Si n+/n- layers for buried collector double heterostructure bipolar transistors
Schelhase, S.; Bottcher, J.; Gibis, R.; Harde, P.; Paraskevopoulos, A.; Kunzel, H.
Zeitschriftenaufsatz
1998Selective MOMBE growth of InP-based waveguide/laser butt-joints
Kuenzel, H.; Ebert, S.; Gibis, R.; Kaiser, R.; Kizuki, H.; Malchow, S.; Urmann, G.
Zeitschriftenaufsatz
1998A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure
Mörl, L.; Bornholdt, C.; Hoffmann, D.; Matzen, K.; Mekonnen, G.G.; Reier, F.W.
Konferenzbeitrag
199770 GHz long-wavelength photodetector
Unterborsch, G.; Umbach, A.; Trommer, D.; Mekonnen, G.G.
Konferenzbeitrag
1997Barrier composition dependence of the emission properties of AlGaInAs/GaInAs quantum wells grown by molecular beam epitaxy
Hase, A.; Chew-Walter, A.; Kuenzel, H.
Zeitschriftenaufsatz
1997Coherent signature of differential transmission signals in semiconductors: Theory and experiment
Bartels, G.; Cho, G.C.; Dekorsy, T.; Kurz, H.; Stahl, A.; Köhler, K.
Zeitschriftenaufsatz
1997Direct measurement of the spatial displacement of bloch-oscillating electrons in semiconductor superlattices
Lyssenko, V.G.; Valusis, G.; Löser, F.; Hasche, T.; Leo, K.; Köhler, K.; Dignam, M.M.
Zeitschriftenaufsatz
1997Direct measurement of the spatial displacement of bloch-oscillating electrons in semiconductor superlattices
Lyssenko, V.G.; Sudzius, M.; Valusis, G.; Löser, F.; Hasche, T.; Leo, K.; Dignam, M.M.; Köhler, K.
Zeitschriftenaufsatz
1997Evaluation of defect densities on LP-MOVPE grown InGaAsP in dependence of InP substrate type
Franke, D.; Grote, N.
Konferenzbeitrag
1997Excitonic emisssion of THz radiation. Experimental evidence of the shortcomings of the Bloch equation method
Haring Bolivar, P.; Wolter, F.; Müller, A.; Roskos, H.G.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1997High-frequency behavior of waveguide integrated photodiodes monolithically integrated on InP using optical butt coupling
Umbach, A.; Leone, A.M.; Unterborsch, G.
Zeitschriftenaufsatz
1997Highly reproducible and defect-free MOVPE overgrowth of InGaAsP-based DFB gratings
Franke, D.; Roehle, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1997InAs/AlSb/GaSb heterostructures
Wagner, J.; Schmitz, J.; Fuchs, F.; Obloh, H.; Herres, N.; Koidl, P.
Aufsatz in Buch
1997Integration of guided wave devices for very high bitrates
Agrawal, N.; Bach, H.-G.; Hoffmann, D.
Konferenzbeitrag
1997Investigation of Be-distribution profiles in MBE-grown GaInAs for optimization of HBT base structures
Passenberg, W.; Harde, P.; Paraskevopoulos, A.
Konferenzbeitrag
1997Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere
Roehle, H.; Schroeter-Janssen, H.; Kaiser, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1997LP-MOVPE growth of laser structures using nitrogen carrier gas
Roehle, H.; Schroeter-Janssen, H.
Konferenzbeitrag
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1997MBE regrowth of InP on patterned surfaces and its application potential for optoelectronic devices
Paraskevopoulos, A.; Kunzel, H.; Bottcher, J.; Urmann, G.; Hensel, H.J.; Bozbek, A.
Konferenzbeitrag
1997MBE regrowth on AlGaInAs DFB gratings using in-situ hydrogen radical cleaning
Kuenzel, H.; Boettcher, J.; Hase, A.; Hensel, H.-J.; Janiak, K.; Urmann, G.; Paraskevopoulos, A.
Konferenzbeitrag, Zeitschriftenaufsatz
1997Molecular beam epitaxy of Al(0.48)In(0.52)As/Ga(0.47)In(0.53)As heterostructures on metamorphic Al(x)Ga(y)In(1-x-y)As buffer layers
Haupt, M.; Köhler, K.; Ganser, P.; Müller, S.; Rothemund, W.
Zeitschriftenaufsatz
1997Molecular beam epitaxy of vertically compact Al(x)Ga(1-x)As/GaAs laser-HEMT structures for monolithic integration
Gaymann, A.; Schaub, J.; Bronner, W.; Grün, N.; Hornung, J.; Köhler, K.
Zeitschriftenaufsatz
1997MOMBE growth of semi-insulating GaInAsP(lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Konferenzbeitrag
1997MOVPE growth of a polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier MQW waveguide structure
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Morl, L.; Weinert, C.M.
Konferenzbeitrag
1997Optically pumped, indirect-gap Al(x)Ga(1-x)As lasers
Wörner, A.; Westphäling, R.; Kalt, H.; Köhler, K.
Zeitschriftenaufsatz
1997Selective MOMBE growth behaviour at the lateral interface of waveguide/laser butt-joints
Kunzel, H.; Ebert, S.; Gibis, R.; Kaiser, R.; Kizuki, H.; Malchow, S.
Konferenzbeitrag
1997Strain compensated GaInAs/AlInAs tunnelling barrier MQW structure for polarisation independent optical switching
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Mörl, L.; Weinert, C.M.
Konferenzbeitrag
1997Surface preparation for molecular beam epitaxy-regrowth on metalorganic vapour phase epitaxy grown InP and InGaAsP layers
Passenberg, W.; Schlaak, W.
Zeitschriftenaufsatz
1997Ultrafast acoustic phonon ballistics in semiconductor heterostructures
Baumberg, J.J.; Williams, D.A.; Köhler, K.
Zeitschriftenaufsatz
1997Ultrafast monolithic InP-based photoreceiver module detecting a 40 Gbit/s optical TDM RZ modulated pulse sequence
Bach, H.-G.; Bertenburg, R.M.; Bulow, H.; Jacumeit, G.; Mekonnen, G.G.; Umbach, A.; Unterborsch, G.; Veith, G.; Waasen, S. van
Konferenzbeitrag
199620 Gbit/s InP-based photoreceiver module: application in nonrepeatered TDM with 198 km DSF
Bach, H.-G.; Bertenburg, R.M.; Bogner, W.; Gottwald, E.; Jacumeit, G.; Mekonnen, G.G.; Umbach, A.; Unterborsch, G.; Wassen, S. van
Konferenzbeitrag
199627 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier
Umbach, A.; Passenberg, W.; Unterborsch, G.; Mekonnen, G.G.; Schlaak, W.; Schramm, C.; Ebert, W.; Wolfram, P.; Bach, H.-G.; Waasen, S. van; Bertenburg, R.M.; Janssen, G.; Reuter, R.; Auer, U.; Tegude, F.-J.
Konferenzbeitrag
1996Bi-directional photonic integrated transceivers for optical communication systems
Heidrich, H.; Hamacher, M.; Kaiser, R.; Wenger, G.; Albrecht, P.; Löffler, R.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.; Steingrüber, R.
Konferenzbeitrag
1996Bloch oscillations of excitonic and continuum states in superlattices
Leisching, P.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Köhler, K.; Kurz, H.
Konferenzbeitrag
1996Bloch oscillations. Coherent control of wave packet dynamics in superlattices
Lyssenko, V.G.; Valusis, G.; Löser, F.; Hasche, T.; Leo, K.; Köhler, K.; Dignam, M.M.
Konferenzbeitrag
1996Coherent exciton dynamics as a function of quantum-well number
Weber, D.; Feldmann, J.; Göbel, E.O.; Stroucken, T.; Knorr, A.; Koch, S.W.; Citrin, D.S.; Köhler, K.
Zeitschriftenaufsatz
1996Crosstalk reduced digital optical switch with single electrode designed for InP
Nolting, H.-P.; Gravert, M.; Bachmann, M.; Renaud, M.
Konferenzbeitrag
1996Dephasing and selection rules of interband and intraband polarisations in superlattices
Leisching, P.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1996Dephasing dynamics of wave packets in semiconductor superlattices
Valusis, G.; Lyssenko, V.G.; Klatt, D.; Löser, F.; Pantke, K.-H.; Leo, K.; Köhler, K.
Konferenzbeitrag
1996Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP
Schramm, C.; Schlaak, W.; Mekonnen, G.G.; Passenberg, W.; Umbach, A.; Seeger, A.; Wolfram, P.; Bach, H.-G.
Zeitschriftenaufsatz
1996Design of fiber-matched uncladded rib waveguides on InP with polarization-independent mode matching loss of 1 dB
Weinert, C.M.
Zeitschriftenaufsatz
1996Design of fibre matched uncladded rib waveguides on InP with polarization independent fibre coupling loss of 1 dB
Weinert, C.M.
Konferenzbeitrag
1996Dissipative tunneling in asymmetric double-quantum-well system. A coherence phenomenon
Vaupel, H.; Thomas, P.; Kühn, O.; May, V.; Maschke, K.; Heberle, A.P.; Rühle, W.W.; Köhler, K.
Zeitschriftenaufsatz
1996Exciton dephasing in quantum wells. Influence of spectral fluctuation processes
Löser, F.; Neuber, A.; Klatt, D.; Lyssenko, V.G.; Pantke, K.-H.; Leo, K.; Glutsch, S.; Köhler, K.
Konferenzbeitrag
1996Femtosecond coherent fields induced by many-particle correlations in transient four-wave mixing
Schäfer, W.; Kim, D.-S.; Shah, J.; Damen, T.C.; Cunningham, J.E.; Goossen, K.W.; Pfeiffer, L.N.; Köhler, K.
Zeitschriftenaufsatz
1996Field enhanced blockade of the confined energy levels in nanometer scale pillar arrays
Alphenaar, B.W.; Durrani, Z.A.K.; Wagner, M.; Köhler, K.
Zeitschriftenaufsatz
1996GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits
Schlaak, W.; Passenberg, W.; Schramm, C.; Mekonnen, G.G.; Umbach, A.; Ebert, W.; Bach, H.-G.
Konferenzbeitrag
1996High-bandwidth 1.55 mu m waveguide integrated photodetector
Unterborsch, G.; Trommer, D.; Umbach, A.; Mekonnen, G.G.
Konferenzbeitrag
1996Hydrogen radical processing-in-situ semiconductor surface cleaning for epitaxial regrowth
Kunzel, H.; Hase, A.; Griebenow, U.
Konferenzbeitrag
1996Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures
Reier, F.W.; Bornholdt, C.; Hoffmann, D.; Kappe, F.; Mörl, L.
Konferenzbeitrag
1996Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W.
Konferenzbeitrag
1996Influence of spatial doping correlation on scattering times studied in gated and ungated GaAs/AlGaAs quantum weels under hydrostatic pressure
Brunthaler, G.; Penn, C.; Suski, T.; Wisniewski, P.; Litwin-Staszewska, E.; Köhler, K.
Zeitschriftenaufsatz
1996Influence of the electron-electron and electron-phonon interaction on the cyclotron resonance of 2DEG in GaAs
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1996Integration of polarisation independent mode transformers with uncladded InGaAsP/InP rib waveguides
Albrecht, P.; Heidrich, H.; Löffler, R.; Mörl, L.; Reier, F.; Weinert, C.M.
Zeitschriftenaufsatz
1996Intersubband plasmon-phonon modes of a quasi two-dimensional electron gas in GaAs
Friedrich, T.; Rösch, M.; Latussek, V.; Batke, E.; Köhler, K.; Ganser, P.
Konferenzbeitrag
1996Investigation of macroscopic uniformity during CH4/H2 reactive ion etching of InP and improvement using a guard ring
Janiak, K.; Niggebrugge, U.
Konferenzbeitrag
1996LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas
Roehle, H.; Schroeter-Janssen, H.
Konferenzbeitrag
1996MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration
Passenberg, W.; Schlaak, W.; Umbach, A.
Konferenzbeitrag
1996Metal-non-metal transition at the crossover from antidots to quantum dots
Lütjering, G.; Weiss, D.; Tank, R.W.; Klitzing, K. von; Hülsmann, A.; Jakobus, T.; Köhler, K.
Zeitschriftenaufsatz
1996Mobility and quantum lifetime in a GaAs/AlGaAs heterostructure. Tuning of the remote-charge correlations
Wisniewski, P.; Suski, T.; Litwin-Staszewska, E.; Brunthaler, G.; Köhler, K.
Zeitschriftenaufsatz
1996Molecular beam epitaxy of GaAs/Al(x)Ga(1-x)As/In(y)Ga(1-y)As heterostructures for opto-electronic devices. Control of growth parameters
Köhler, K.
Zeitschriftenaufsatz
1996MOMBE growth of high quality GaInAsP (lambda g=1.05 mu m) for waveguide applications
Kuenzel, H.; Albrecht, P.; Gibis, R.; Hamacher, M.; Schelhase, S.
Konferenzbeitrag, Zeitschriftenaufsatz
1996MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth
Schelhase, S.; Boettcher, J.; Gibis, R.; Kuenzel, H.; Paraskevopoulos, A.
Konferenzbeitrag, Zeitschriftenaufsatz
1996Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth
Umbach, A.; Waasen, S. van; Auer, U.; Bach, H.-G.; Bertenburg, R.M.; Breuer, V.; Ebert, W.; Janssen, G.; Mekonnen, G.G.; Passenberg, W.; Schlaak, W.; Schramm, C.; Seeger, A.; Tegude, F.-J.; Unterborsch, G.
Zeitschriftenaufsatz
1996Monolithically integrated nonlinear interferometers for all-optical switching
Jahn, E.; Agrawal, N.; Ehrke, H.-J.; Pieper, W.; Franke, D.; Furst, W.; Weinert, C.M.
Konferenzbeitrag
1996Nonlinear optical studies of Bloch oscillations
Leisching, P.; Beck, W.; Kurz, H.; Köhler, K.; Schäfer, W.; Leo, K.
Zeitschriftenaufsatz
1996Novel chips for the communication age-joint effort on III-V electronics a success
Diehl, R.
Zeitschriftenaufsatz
1996Optical study of Bloch oscillations in superlattices
Cho, G.C.; Dekorsy, T.; Bakker, H.J.; Kohl, A.; Opitz, B.; Köhler, K.; Kurz, H.
Konferenzbeitrag
1996Photoluminescence and Raman spectroscopy of single delta-doped III-V semiconductor heterostructures
Wagner, J.; Richards, D.
Aufsatz in Buch
1996Photon drag spectroscopy of a two-dimensional electron system
Sigg, H.; Son, P. van; Köhler, K.
Zeitschriftenaufsatz
1996Polarization independent integrated mode transformer for uncladded InGaAsP/InP rib waveguides without epitaxial regrowth
Albrecht, P.; Heidrich, H.; Löffler, R.; Mörl, L.; Reier, F.; Weinert, C.M.
Konferenzbeitrag
1996Quantum coherence of continuum states in the valence band of GaAs quantum wells
Dekorsy, T.; Kim, A.M.T.; Cho, G.C.; Hunsche, S.; Bakker, H.J.; Kurz, H.; Chuang, S.L.; Köhler, K.
Zeitschriftenaufsatz
1996Raman spectroscopy of doping sheets and heterointerfaces in III-V semiconductor structures
Wagner, J.; Schmitz, J.; Newman, R.C.; Roberts, C.
Zeitschriftenaufsatz
1996Relaxation dynamics of electrons between Landau levels in GaAs
Hannak, R.M.; Rühle, W.W.; Köhler, K.
Zeitschriftenaufsatz
1996Resonant polaron coupling of high index electron Landau levels in GaAs heterostructures
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1996Time-resolved optical investigations of Bloch oscillations in semiconductor superlattices
Dekorsy, T.; Ott, R.; Leisching, P.; Bakker, H.J.; Waschke, C.; Roskos, H.G.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1996Time-resolved study of intervalence band thermalization in a GaAs quantum well
Kim, A.M.T.; Hunsche, S.; Dekorsy, T.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1996Ultrafast coherent carrier control in quantum wells
Baumberg, J.J.; Heberle, A.P.; Köhler, K.; Ploog, K.
Zeitschriftenaufsatz
1996Ultrafast coherent carrier control in quantum wells
Heberle, A.P.; Baumberg, J.J.; Köhler, K.; Ploog, K.
Konferenzbeitrag
1996Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Mekonnen, G.G.; Schlaak, W.; Schramm, C.; Ebert, W.; Wolfram, P.; Waasen, S. van; Bertenburg, R.M.; Janssen, G.; Reuter, R.; Auer, U.; Tegude, F.-J.
Konferenzbeitrag
1996Ultrafast hole-lattice thermalization in GaAs quantum wells
Hunsche, S.; Kim, A.M.T.; Dekorsy, T.; Kurz, H.; Köhler, K.
Konferenzbeitrag
1996Ultrafast monolithically integrated InP-based photoreceiver: OEIC-design, fabrication, and system application
Bach, H.-G.; Umbach, A.; Waasen, S. van; Bertenburg, R.M.; Unterborsch, G.
Zeitschriftenaufsatz
1996Ultrafast photon drag detector for intersubband spectroscopy
Sigg, H.; Graf, S.; Kwakernaak, M.H.; Margotte, B.; Erni, D.; Son, P. van; Köhler, K.
Zeitschriftenaufsatz
1996Uncladded InGaAsP/InP rib waveguides with integrated thickness tapers for efficient fibre-chip butt coupling
Mörl, L.; Weinert, C.M.; Reier, F.; Stoll, L.; Nolting, H.-P.
Zeitschriftenaufsatz
1996Waveguide integrated 1.55 mu m photodetector with 45 GHz bandwidth
Umbach, A.; Trommer, D.; Mekonnen, G.G.; Ebert, W.; Unterborsch, G.
Zeitschriftenaufsatz
1995Band-gap renormalization and excitonic effects in tunneling in asymmetric double quantum wells
Tackeuchi, A.; Heberle, A.P.; Rühle, W.W.; Köhler, K.
Zeitschriftenaufsatz
1995Bloch oscillations at room temperature
Dekorsy, T.; Ott, R.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1995Bloch oscillations in semiconductor superlattices
Roskos, H.G.; Waschke, C.; Victor, K.; Köhler, K.; Kurz, H.
Zeitschriftenaufsatz
1995Coexistence of the Franz-Keldysh and Wannier-Stark effect in semiconductor superlattices
Linder, N.; Schmidt, K.H.; Geisselbrecht, W.; Döhler, G.H.; Grahn, H.T.; Ploog, K.; Schneider, H.
Zeitschriftenaufsatz
1995Coherent dynamics of excitonic and biexcitonic wave packets in semiconductor superlattices
Leisching, P.; Ott, R.; Bolivar, P.H.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1995Coherent exciton-photon dynamics in single, double, and quintuple quantum wells.
Weber, D.; Feldmann, J.; Göbel, E.O.; Citrin, D.S.; Köhler, K.
Zeitschriftenaufsatz
1995Controllable self-pulsations in multi-section DFB lasers with an integrated phase-tuning section
Sartorius, B.; Möhrle, M.; Reichenbacher, S.; Ebert, W.
Zeitschriftenaufsatz
1995Electron g factor in quantum wells determined by spin quantum beats
Hannak, R.M.; Oestreich, M.; Heberle, A.P.; Rühle, W.W.; Köhler, K.
Zeitschriftenaufsatz
1995Exceptionally slow dephasing of electronic continuum states in a semiconductor
Leisching, P.; Dekorsy, T.; Bakker, H.J.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1995External-field-dependent enhancement of internal Coulomb interactions in time-resolved four-wave mixing
Beck, W.; Leisching, P.; Kurz, H.; Schaefer, W.; Leo, K.; Köhler, K.
Zeitschriftenaufsatz
1995External-field-induced electric dipole moment of biexcitons in a semiconductor
Leisching, P.; Ott, R.; Haring Bolivar, P.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1995Fabrication of polarization diversity heterodyne receiver PICs on InP: Status, challenges and perspectives
Kaiser, R.
Konferenzbeitrag
1995Fast 2*2 Mach-Zehnder optical space switches using InGaAsP-InP multiquantum-well structures
Agrawal, N.; Weinert, C.M.; Ehrke, H.-J.; Mekonnen, G.G.; Franke, D.; Bornholdt, C.; Langenhorst, R.
Zeitschriftenaufsatz
1995First heterodyne receiver frontend module including a polarization diversity receiver OEIC on InP
Hamacher, M.; Trommer, D.; Heidrich, H.; Albrecht, P.; Jacumeit, G.; Passenberg, W.; Rohle, H.; Schroeter-Janssen, H.; Stenzel, R.; Unterborsch, G.
Zeitschriftenaufsatz
1995First system experiments with a monolithically integrated tunable polarization diversity heterodyne receiver OEIC on InP
Hilbk, U.; Hermes, T.; Meissner, P.; Jacumeit, C.; Stentel, R.; Unterborsch, G.
Zeitschriftenaufsatz
1995Four-wave-mixing theory beyond the semiconductor Bloch equations
Axt, V.M.; Stahl, A.; Mayer, E.J.; Haring Bolivar, P.; Nüsse, S.; Ploog, K.; Köhler, K.
Zeitschriftenaufsatz
1995In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth
Kunzel, H.; Bochnia, R.; Bottcher, J.; Harde, P.; Hase, A.; Griebenow, U.
Konferenzbeitrag, Zeitschriftenaufsatz
1995Interaction coupled cyclotron transitions of two-dimensional electron systems in GaAs at high temperatures
Hu, C.M.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1995Laser emission in indirect-gap AlxGa1-xAs
Westphäling, R.; Wörner, A.; Kalt, H.; Köhler, K.
Konferenzbeitrag
1995Mobility enhancement due to spatial correlation of remote impurity charges in delta-doped AlGaAs/GaAs heterostructure
Suski, T.; Brunthaler, G.; Stöger, G.; Köhler, K.; Wisniewski, P.
Konferenzbeitrag
1995Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing
Kunzel, H.; Bottcher, J.; Hase, A.; Hofsass, V.; Kaden, C.; Schweizer, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1995Monolithic integrated high-speed balanced-mixer detector on InP
Unterborsch, G.; Trommer, D.; Jacumeit, G.; Mekonnen, G.G.; Reier, F.; Stenzel, R.
Konferenzbeitrag
1995Monolithically integrated polarisation-insensitive high-speed balanced mixer receiver on InP
Trommer, D.; Unterborsch, G.
Zeitschriftenaufsatz
1995Multi-purpose dual tunable laser/combiner PIC based on InP
Trommer, D.; Kaiser, R.; Stenzel, R.; Heidrich, H.
Konferenzbeitrag
1995Non-Markovian polarization decay in semiconductor quantum wells by three-beam four-wave mixing
Löser, F.; Klatt, D.; Pantke, K.-H.; Leo, K.; Bakker, H.; Shah, J.; Köhler, K.
Zeitschriftenaufsatz
1995On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP
Roehle, H.; Schroeter-Janssen, H.; Harde, P.; Franke, D.
Konferenzbeitrag
1995Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Strahle, S.; Kohn, E.
Konferenzbeitrag, Zeitschriftenaufsatz
1995Photonic ICs await their utilisation
Heidrich, H.
Zeitschriftenaufsatz
1995Photonic integration on InP
Trommer, D.
Konferenzbeitrag
1995Spin-split cyclotron resonance and spatial distribution of interacting electrons
Hu, C.M.; Friedrich, T.; Batke, E.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1995Stable operation of two OEIC-based tunable polarization-diversity heterodyne receivers
Hilbk, U.; Hermes, T.; Meissner, P.; Westphal, F.-J.
Konferenzbeitrag
1995State-of-the-art III-V semiconductor devices for microwave/mm-wave and optoelectronic applications
Diehl, R.; Schlechtweg, M.
Konferenzbeitrag
1995Submicron InGaAs/InP MSM photodetectors for operation at 1.55 mu m
Umbach, A.; Droge, E.; Engel, H.; Bottcher, E.H.; Unterborsch, G.; Steingrüber, R.; Bimberg, D.
Konferenzbeitrag
1995Time-resolved luminescence of semiconductor heterostructures in high magnetic field
Heberle, A.P.; Haacke, S.; Oestreich, M.; Potemski, M.; Rühle, W.W.; Maan, J.C.; Köhler, K.; Weimann, G.; Queisser, H.-J.
Zeitschriftenaufsatz
1995Ultrafast coherent control and destruction of excitons in quantum wells
Heberle, A.P.; Baumberg, J.J.; Köhler, K.
Zeitschriftenaufsatz
1995Ultrafast far-infrared GaAs/AlGaAs photon drag detector in microwave transmission line topology.
Sigg, H.; Kwakernaak, M.H.; Margotte, A.B.; Erni, D.; Son, P. van; Köhler, K.
Zeitschriftenaufsatz
1995Uncladded thickness tapers integrated with InGaAsP/InP rib waveguides for efficient fibre-chip butt coupling
Morl, L.; Weinert, C.M.; Reier, F.; Stoll, L.; Nolting, H.-P.
Konferenzbeitrag
1995X(5) signature in th four-wave-mixing signal from a GaAs/Al(0.3)Ga(0.7)As superlattice
Bartels, G.; Axt, V.M.; Victor, K.; Stahl, A.; Leisching, P.; Köhler, K.
Zeitschriftenaufsatz
199412 GHz to 64 GHz continuous frequency tuning in selfpulsating 1.55 mu m quantum well DFB lasers
Feiste, U.; Möhrle, M.; Sartorius, B.; Hörer, J.; Löffler, R.
Konferenzbeitrag
19942*2 optical space switches using InGaAsP/InP MQW structures for 10-GHz applications
Agrawal, N.; Franke, D.; Weinert, C.M.; Bornholdt, C.
Konferenzbeitrag
199435 GHz bandwidth photonic space switch with travelling wave electrodes on InP
Kappe, F.; Mekonnen, G.G.; Bornholdt, C.; Reier, F.W.; Hoffman, D.
Zeitschriftenaufsatz
1994Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
Hase, A.; Kunzel, H.; Zahn, D.R.T.; Richter, W.
Zeitschriftenaufsatz
1994Bloch oscillations in GaAs/AlGaAs superlattices after excitation well above the bandgap
Roskos, H.G.; Waschke, C.; Schwedler, R.; Leisching, P.; Dhaibi, Y.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1994Bloch oscillations in superlattices
Leisching, P.; Waschke, C.; Bolivar, P.H.; Beck, W.; Roskos, H.; Leo, K.; Kurz, H.; Köhler, K.; Ganser, P.
Aufsatz in Buch
1994Bloch oscillations of excitonic wave packets semiconductor superlattices
Leisching, P.; Haring Bolivar, P.; Beck, W.; Dhaibi, Y.; Brüggemann, F.; Schwedler, R.; Leo, K.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1994Dependence of resonant electron and hole tunnelling times between quantum wells on barrier thickness.
Heberle, A.P.; Zhou, X.Q.; Tackeuchi, A.; Rühle, W.W.; Köhler, K.
Zeitschriftenaufsatz
1994Development of advanced GaInAs/AlInAs delta-doped SQW-HEMT structures
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Hase, A.
Konferenzbeitrag
1994Differences in the growth mechanism of InxGa1-xAs on GaAs studied by the electrical properties of Al0.3Ga0.7As/InxGa1-xAs heterostructures 0.2 equal/smaller than x equal/smaller than 0.4
Köhler, K.; Schweizer, T.; Ganser, P.; Hiesinger, P.; Rothemund, W.
Konferenzbeitrag
1994Doping characteristics of undoped and Zn-doped In(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy
Reier, F.W.; Jahn, E.; Agrawal, N.; Harde, P.; Grote, N.
Zeitschriftenaufsatz
1994Doping dependence of the E1 and E1 plus Delta1 critical points in highly doped n- and p-type GaAs: Importance of surface band bending and depletion
Kuball, M.; Kelly, M.K.; Cardona, M.; Köhler, K.; Wagner, J.
Zeitschriftenaufsatz
1994Elimination of long-term calibration drift in molecular beam epitaxy by cooling the source flange
Larkins, E.C.; Thaden, H.; Betsche, H.; Eichin, G.; Ralston, J.D.
Zeitschriftenaufsatz
1994Exciton absorption saturation by phase-space filling: Influence of carrier temperature and density
Hunsche, S.; Leo, K.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1994Excitonic enhancement of the Fermi edge singularity and recombination kinetics of photogenerated electrons in p-type delta-doped GaAs-Be/AlxGa1-xAs double-heterostructures.
Wagner, J.; Richards, D.; Schneider, H.; Fischer, A.; Ploog, K.
Zeitschriftenaufsatz
1994Experimental realization of the Bloch oscillator in a semiconductor superlattice.
Waschke, C.; Roskos, H.G.; Leo, K.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1994Femtosecond intersubband relaxation in GaAs quantum wells
Hunsche, S.; Leo, K.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1994High-speed optical 2*2 space switch on InP with travelling wave electrodes
Kappe, F.; Bornholdt, C.; Mekonnen, G.G.; Ehrke, H.J.; Reier, F.-W.; Hoffmann, D.
Konferenzbeitrag
1994Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Heedt, C.
Zeitschriftenaufsatz
1994In situ native oxide removal from AlGaInAs surfaces by hydrogen radical treatment for molecular beam epitaxy regrowth
Hase, A.; Gibis, A.R.; Kunzel, H.; Griebenow, U.
Zeitschriftenaufsatz
1994Influence of Coulombic broadened DX center energy levels on free electron concentration in delta-doped AlxGa1-xAs/GaAs quantum wells
Brunthaler, G.; Seto, M.; Stöger, G.; Köhler, K.
Zeitschriftenaufsatz
1994Instantaneous contribution in time-resolved four-wave mixing from GaAs quantum wells near zero time delay
Kim, D.-S.; Shah, J.; Damen, T.C.; Schäfer, W.; Pfeiffer, L.N.; Köhler, K.
Zeitschriftenaufsatz
1994Integration of a tunable 4-section DBR laser within polarization diversity heterodyne receiver PICs
Kaiser, R.; Fidorra, F.; Trommer, D.; Malchow, S.; Albrecht, P.; Franke, D.; Heidrich, H.; Passenberg, W.; Schroeter-Janssen, H.; Stenzel, R.; Rehbein, W.
Konferenzbeitrag
1994Integration of tunable DBR-lasers with waveguides for heterodyne receiver OEIC applications using selective area MOVPE
Kaiser, R.; Fidorra, F.; Heidrich, H.; Albrecht, P.; Rehbein, W.; Malchow, S.; Schroeter-Janssen, H.; Franke, D.; Sztefka, G.
Konferenzbeitrag
1994Internal field dynamics of cohorent Bloch oscillations in supperlattices
Dekorsy, T.; Leisching, P.; Beck, W.; Ott, R.; Dhaibi, Y.; Schwedler, R.; Roskos, H.G.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1994Investigation of Bloch oscillations in a GaAs/AlGaAs superlattice by spectrally resolved four-wave mixing.
Leisching, P.; Bolivar, P.H.; Schwedler, R.; Leo, K.; Kurz, H.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1994Monolithically integrated polarisation diversity heterodyne receivers on GaInAsP/InP
Kaiser, R.; Trommer, D.; Fidorra, F.; Heidrich, H.; Malchow, S.; Franke, D.; Passenberg, W.; Rehbein, W.; Schroeter-Janssen, H.; Stenzel, R.; Unterborsch, G.
Zeitschriftenaufsatz
1994Novel high gate barrier AlInAs/GaInAs/InP HEMT structure: Concept verification and key technologies
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Schramm, C.; Kunzel, H.
Konferenzbeitrag
1994OEIC on indium phosphide: key components for future photonic networks
Heidrich, H.
Zeitschriftenaufsatz
1994Ohmic contacts to buried n-GaInAs layers for GaInAs/AlInAs-HEMTs
Umbach, A.; Schramm, C.; Bottcher, J.; Unterborsch, G.
Konferenzbeitrag
1994Optical properties of low temperature grown GaAs - the influence of a hydrogen plasma treatment
Weber, J.; Köhler, K.; Vetterhöffer, J.
Konferenzbeitrag
1994Photocurrent gain mechanisms in metal-semiconductor-metal photodetectors.
Klingenstein, M.; Kuhl, J.; Rosenzweig, J.; Moglestue, C.; Hülsmann, A.; Schneider, J.; Köhler, K.
Zeitschriftenaufsatz
1994Self-consistent calculation of quantum well electron transfer structures for ultrafast optical switches
Weinert, C.M.; Agrawal, N.
Konferenzbeitrag
1994Self-consistent finite difference method for simulation and optimization of quantum well electron transfer structures
Weinert, C.M.; Agrawal, N.
Zeitschriftenaufsatz
1994Stable operation of a monolithically integrated InP-heterodyne polarization diversity receiver-module including a tunable laser in an experimental OFDM system
Hilbk, U.; Hermes, T.; Meissner, P.; Westphal, F.-J.; Jacumeit, G.; Stenzel, R.; Unterborsch, G.
Konferenzbeitrag
1994Terahertz Bloch oscillations in semiconductor superlattices
Dekorsy, T.; Leisching, P.; Waschke, C.; Köhler, K.; Leo, K.; Roskos, H.G.; Kurz, H.
Zeitschriftenaufsatz
1994Time-resolved studies of Bloch oscillations in semiconductor superlattices
Leisching, P.; Dekorsy, T.; Waschke, C.; Roskos, H.G.; Leo, K.; Kurz, H.; Köhler, K.
Aufsatz in Buch
1994Ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures
Agrawal, N.; Wegener, M.
Konferenzbeitrag
1994Ultrafast graded-gap electron transfer optical modulator structure
Agrawal, N.; Wegener, M.
Zeitschriftenaufsatz
1993Auger recombination in intrinsic GaAs
Strauss, U.; Rühle, W.W.; Köhler, K.
Zeitschriftenaufsatz
1993Clock recovery based on a new type of selfpulsation in a 1.5 mu m two-section InGaAsP-InP DFB laser
As, D.J.; Eggemann, R.; Feiste, U.; Möhrle, M.; Patzak, E.; Weich, K.
Zeitschriftenaufsatz
1993Comparison of Si delta-doping with homogenous doping in GaAs.
Köhler, K.; Ganser, P.; Maier, M.
Zeitschriftenaufsatz
1993A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors
Stareev, G.; Kunzel, H.; Dortmann, G.
Zeitschriftenaufsatz
1993Electroabsorption and saturation behavior of InGaAsP/InP/InAlAs multiple superlattice electron transfer optical modulator structures
Agrawal, N.; Reier, F.W.; Bornholdt, C.; Weinert, C.M.; Li, K.C.; Harde, P.; Langenhorst, R.; Grosskopf, G.; Berger, L.; Wegener, M.
Zeitschriftenaufsatz
1993Electronic and optical properties of low-dimensional semiconductor structures
Wagner, J.
Konferenzbeitrag
1993Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p-GaAs
Stareev, G.
Zeitschriftenaufsatz
1993Der Forschungsdrang reicht schon in Terabit-Dimensionen.
Diehl, R.
Zeitschriftenaufsatz
1993Highly abrupt modulation Zn doping in LP-MOVPE grown InAlAs as applied to quantum well electron transfer structures for optical switching
Reier, F.W.; Agrawal, N.; Harde, P.; Bochnia, R.
Konferenzbeitrag
1993In situ SIMS monitoring for ion beam etching of III-V semiconductor compounds and metal contacts
Hensel, H.J.; Paraskevopoulos, A.; Mörl, L.; Hase, A.; Böttcher, J.
Konferenzbeitrag
1993InP based InGaAs-JFET with delta-doped channel
Mekonnen, G.G.; Passenberg, W.; Schramm, C.; Trommer, D.; Unterborsch, G.
Konferenzbeitrag
1993Investigation of DX centers in AlxGa1-xAs by space charge spectroscopy.
Wöckinger, J.; Jantsch, W.; Wilamowski, Z.; Köhler, K.
Zeitschriftenaufsatz
1993Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1993Low-temperature MBE of AlGaInAs lattice-matched to InP
Künzel, H.; Böttcher, J.; Gibis, R.; Hoenow, H.; Heedt, C.
Konferenzbeitrag, Zeitschriftenaufsatz
1993MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures
Kunzel, H.; Bottcher, J.; Hase, A.; Shramm, C.
Konferenzbeitrag, Zeitschriftenaufsatz
1993Monolithic integrated wavelength duplexer-receiver on InP
Bornholdt, C.; Trommer, D.; Unterborsch, G.; Bach, H.-G.; Venghaus, H.; Weinert, C.M.
Zeitschriftenaufsatz
1993Observation of Bloch oscillations in a semiconductor superlattice
Haring Bolivar, P.; Leisching, P.; Leo, K.; Shah, J.; Köhler, K.
Aufsatz in Buch
1993On the potential of delta-doping for AlInAs/GaInAs HEMTs grown by MBE
Passenberg, W.; Bach, H.-G.; Bottcher, J.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1993Polarization independent Mach-Zehnder Interferometer on III-V-semiconductors
Venghaus, H.; Weinert, C.M.
Konferenzbeitrag
1993Polarization-independent Mach-Zehnder interferometer on III-V semiconductors
Venghaus, H.; Weinert, C.M.
Zeitschriftenaufsatz
1993Quantitative analysis of Be diffusion in delta-doped AlInAs and GaInAs during MBE growth
Passenberg, W.; Harde, P.
Konferenzbeitrag
1993Temperature-dependent cyclotron resonances in n-type GaAs
Batke, E.; Bollweg, K.; Merkt, U.; Hu, C.M.; Köhler, K.; Ganser, P.
Zeitschriftenaufsatz
1993Tunneling behavior of extremely low resistance nonalloyed Ti/Pt/Au contacts to n(p)-InGaAs and n-InAs/InGaAs
Stareev, G.; Kunzel, H.
Zeitschriftenaufsatz
1993Vectorial simulation of passive TE/TM mode converter devices on InP
Weinert, C.M.; Heidrich, H.
Zeitschriftenaufsatz
1993World-class results from Germany
Diehl, R.
Zeitschriftenaufsatz
1992Coherent receiver front-end module including a polarization diversity waveguide OIC and a high-speed InGaAs twin-dual p-i-n photodiode OEIC both based on InP
Hamacher, M.; Heidrich, H.; Kruger, U.; Stenzel, R.; Bauer, J.G.; Albrecht, H.
Zeitschriftenaufsatz
1992Dissipative dynamics of an electronic wavepacket in a semiconductor double well potential.
Schulze, A.; Meier, T.; Thomas, P.; Luo, M.S.C.; Schäfer, W.; Chuang, S.L.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Schmitt-Rink, S.; Shah, J.
Zeitschriftenaufsatz
1992Electro-optic modulation by electron transfer in multiple InGaAsP/InP barrier, reservoir, and quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.
Zeitschriftenaufsatz
1992Fundamental characteristics of InGaAs/InGaAsP-MQW-SCH-lasers emitting in 1.3 mu m wavelength range
Möhrle, M.; Rosenzweig, M.; Düser, H.; Grützmacher, D.
Zeitschriftenaufsatz
1992Gigahertz self-pulsation in 1.5 mu m wavelength multisection DFB lasers
Möhrle, M.; Feister, U.; Hörer, J.; Molt, R.; Sartorius, B.
Zeitschriftenaufsatz
1992Integrated balanced mixer receiver on InP
Trommer, D.; Bornholdt, C.; Stenzel, R.; Umbach, A.; Unterborsch, G.
Konferenzbeitrag
1992Integrated wavelength demultiplexer-receiver on InP
Bornholdt, C.; Trommer, D.; Unterborsch, G.; Bach, H.G.; Kappe, F.; Passenberg, W.; Rehbein, W.; Reier, F.; Schramm, C.; Stenzel, R.; Umbach, A.; Venghaus, H.; Weinert, C.M.
Zeitschriftenaufsatz
1992Ion irradiation damage in n-type GaAs in comparison with its electron irradiation damage.
Eisen, F.H.; Bachem, K.H.; Klausman, E.; Köhler, K.; Haddad, R.
Zeitschriftenaufsatz
1992Key components based on InP for optical broadband communication. 2
Preier, H.; Doldissen, W.; Venghaus, H.
Zeitschriftenaufsatz
1992Key components for optical broadband communication based in InP
Preier, H.; Doldissen, W.; Venghaus, H.
Zeitschriftenaufsatz
1992Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides
Künzel, H.; Grote, N.; Albrecht, P.; Böttcher, J.; Bornholdt, C.
Zeitschriftenaufsatz
1992Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy
Kunzel, H.; Bottcher, J.; Gibis, R.; Urmann, G.
Zeitschriftenaufsatz
1992Meander-type wavelength demultiplexer with weighted coupling
Venghaus, H.; Bornholdt, C.; Kappe, F.; Nolting, H.-P.; Weinert, C.M.
Zeitschriftenaufsatz
1992MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices
Agrawal, N.; Franke, D.; Grote, N.; Reier, F.W.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1992Observation of Bloch oscillations in a semiconductor superlattice
Leo, K.; Bolivar, P.H.; Brüggemann, F.; Schwedler, R.; Köhler, K.
Zeitschriftenaufsatz
1992Optically induced carrier transfer in silicon anti-modulation-doped GaAs/Al(x)Ga(1-x)As single quantum wells
Harris, C.I.; Monemar, B.; Brunthaler, G.; Kalt, H.; Köhler, K.
Zeitschriftenaufsatz
1992Passive mode converter with a periodically tilted InP/GaInAsP rib waveguide
Heidrich, H.; Albrecht, P.; Hamacher, M.; Nolting, H.-P.; Schroeter-Janssen, H.; Weinert, C.M.
Zeitschriftenaufsatz
1992Picosecond photodetectors fabricated on low temperature GaAs
Klingenstein, M.; Kuhl, J.; Nötzel, R.; Ploog, K.; Rosenzweig, J.; Moglestue, C.; Schneider, J.; Hülsmann, A.; Köhler, K.
Konferenzbeitrag
1992Polarization dependence of heavy- and light-hole quantum beats
Schmitt-Rink, S.; Bennhardt, D.; Heuckeroth, V.; Thomas, P.; Haring, P.; Maidorn, G.; Bakker, H.; Leo, K.; Kim, D.-S.; Shah, J.; Köhler, K.
Zeitschriftenaufsatz
1992Pseudomorphic GaxIn1-xAs on InP for HEMT structures grown by MBE
Kunzel, H.; Bach, H.G.; Bottcher, J.; Dickmann, J.; Dambkes, H.; Nachtwei, G.; Heide, S.
Konferenzbeitrag, Zeitschriftenaufsatz
1992Quantum beats versus polarization interference: An experimental distinction
Koch, M.; Feldmann, J.; Plessen, G. von; Göbel, E.O.; Thomas, P.; Köhler, K.
Zeitschriftenaufsatz
1992Raman spectroscopy of dopant induced local vibrational modes in III-V semiconductors
Wagner, J.
Konferenzbeitrag
1992Resonances in tunnelling between quantum wells
Heberle, A.P.; Rühle, W.W.; Alexander, M.G.W.; Köhler, K.
Zeitschriftenaufsatz
1992Resonant electron and hole tunneling between GaAs quantum wells
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Konferenzbeitrag
1992Temperature-induced spin reversal in n-GaAs.
Batke, E.; Bollweg, K.; Merkt, U.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1992Time-resolved four-wave mixing in GaAs/AlAs quantum well structures.
Koch, M.; Feldmann, J.; Plessen, G. von; Meier, T.; Schulze, A.; Thomas, P.; Göbel, E.O.; Köhler, K.; Ploog, K.; Schmitt-Rink, S.
Zeitschriftenaufsatz
1992Tunneling between quantum wells.
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Konferenzbeitrag
1992Tunneling through single AlGaAs barriers
Heberle, A.P.; Rühle, W.W.; Köhler, K.
Zeitschriftenaufsatz
1992Unusually slow temporal evolution of femtosecond four-wave-mixing signals in intrinsic GaAs quantum wells: Direct evidence for the dominance of interaction effects
Schäfer, W.; Jahnke, F.; Damen, T.C.; Kim, D.-S.; Köhler, K.; Schmitt-Rink, S.; Shah, J.
Zeitschriftenaufsatz
199110 Gbit/s monolithic integrated optoelectronic receiver using an MSM photodiode and AlGaAs/GaAs HEMTs.
Hurm, V.; Rosenzweig, J.; Ludwig, M.; Axmann, A.; Berroth, M.; Benz, W.; Osorio, R.; Hülsmann, A.; Kaufel, G.; Köhler, K.; Raynor, B.; Schneider, J.
Konferenzbeitrag
1991Advanced high electron concentration GaAs/AlxGa1-xAs pulse-doped double heterostructure for device application
Bachem, K.H.; Hornung, J.; Hülsmann, A.; Ganser, P.; Köhler, K.; Maier, M.
Konferenzbeitrag
1991Anisotropic electron mobilities of Al0.3Ga0.7As/InxGa1-xAs/GaAs high electron mobility transistor structures.
Schweizer, T.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Application of localized Zn diffusion across heterointerfaces for the realization of a compact high-speed bipolar driver circuit on InGaAsP/InP
Weber, R.; Paraskevopoulos, A.; Schroeter-Janssen, H.; Bach, H.G.
Zeitschriftenaufsatz
1991Coherent oscillations of a wave packet in a semiconductor double-quantum-well structure
Damen, T.C.; Göbel, E.O.; Köhler, K.; Leo, K.; Schäfer, W.; Schmitt-Rink, S.; Shah, J.
Konferenzbeitrag
1991Competition between tunneling and exciton formation for photoexcited carriers in asymmetric double quantum wells.
Kuhl, J.; Strobel, R.; Eccleston, R.; Köhler, K.
Konferenzbeitrag
1991The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layers
Sartorius, B.; Reier, F.; Wolfram, P.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration
Kunzel, H.; Kaiser, R.; Passenberg, W.; Trommer, D.; Unterborsch, G.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Dynamics of free and bound excitons in center-doped GaAs/AsGaAs quantum wells.
Monemar, B.; Kalt, H.; Harris, C.I.; Bergman, J.P.; Holtz, P.O.; Sundaram, M.; Merz, J.L.; Gossard, A.C.; Schweizer, T.; Köhler, K.
Zeitschriftenaufsatz
1991G-factor and effective mass anisotropies in pseudomorphic strained layers.
Hendorfer, G.; Schneider, J.
Zeitschriftenaufsatz
1991Hole-tunneling dynamics in biased GaAs/Al(0.35)Ga(0.65)As asymmetric double quantum wells
Nido, M.; Alexander, M.G.W.; Rühle, W.W.; Köhler, K.
Zeitschriftenaufsatz
1991Indirect stimulated emission at room temperature in the visible range.
Bauser, E.; Kalt, H.; Köhler, K.; Lu, Y.-C.; Rinker, M.
Konferenzbeitrag
1991Indirect-to-direct transition of stimulated emission in AlxGa1-xAs.
Rinker, M.; Kalt, H.; Lu, Y.-C.; Bauser, E.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991Influence of Gamma-L and Gamma-X crossings on stimulated emission in AlxGa1-xAs.
Rinker, M.; Kalt, H.; Lu, Y.-C.; Ganser, P.; Köhler, K.
Zeitschriftenaufsatz
1991An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs
Su, L.M.; Kunzel, H.; Bach, H.G.; Schlaak, W.; Grote, N.
Konferenzbeitrag
1991Laser properties of 1.35 mu m InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures
Möhrle, M.; Grützmacher, D.; Rosenzweig, M.; Düser, H.
Konferenzbeitrag
1991Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE
Rosenzweig, M.; Ebert, W.; Franke, D.; Grote, N.; Sartorius, B.; Wolfram, P.
Konferenzbeitrag, Zeitschriftenaufsatz
1991LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (lambda g < 1.2 mu m) for optical waveguide applications
Reier, F.W.; Harde, P.; Kaiser, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1991MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers
Passenberg, W.; Bach, H.G.; Bottcher, J.
Konferenzbeitrag
1991MBE overgrowth of implanted regions in InP:Fe substrates
Kunzel, H.; Gibis, R.; Schlaak, W.; Su, L.M.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Measurement of the exciton-formation time and the electron- and hole-tunneling times in a double-quantum-well structure
Strobel, R.; Eccleston, R.; Kuhl, J.; Köhler, K.
Zeitschriftenaufsatz
1991Modulation doped inverted and normal GaAs/AlxGa1-xAs heterostructures - influence of Si-segregation on the two-dimensional electron gas.
Bachem, K.H.; Ganser, P.; Köhler, K.; Maier, M.
Zeitschriftenaufsatz
1991Molecular beam epitaxy grown Al(Ga)InAs: Schottky contacts and deep levels
Schramm, C.; Bach, H.G.; Kunzel, H.; Praseuth, J.P.
Zeitschriftenaufsatz
1991Non-linear optical gain of InGaAs/InGaAsP-quantum wells
Rosenzweig, M.; Mohrle, M.; Duser, H.; Tischel, M.; Heltz, R.; Hoffmann, A.
Konferenzbeitrag
1991On the current transport across isotype heterojunctions investigated on InP-based BRS-lasers
Bach, H.G.; Fidorra, F.
Konferenzbeitrag
1991Optical thickness mapping of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.; Wolfram, P.; Franke, D.
Zeitschriftenaufsatz
1991Optimization and calibration of two-wavelength transmission for absolute thickness measurements of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.
Konferenzbeitrag
1991Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE
Kunzel, H.; Passenberg, W.; Bottcher, J.; Heedt, C.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Quantum beats of excitons in quantum wells
Leo, K.; Shah, J.; Schmitt-Rink, S.; Schäfer, W.; Müller, J.F.; Köhler, K.; Damen, T.C.; Göbel, E.O.
Zeitschriftenaufsatz
1991Raman spectroscopy for impurity characterization in III-V semiconductors.
Wagner, J.
Zeitschriftenaufsatz
1991Recent advances in dry etching processes for InP-based materials
Niggebrugge, U.
Konferenzbeitrag
1991A reliable fabrication technique for very low resistance ohmic contacts to p-InGaAs using low energy Ar+ ion beam sputtering
Stareev, G.; Umbach, A.; Fidorra, F.; Roehle, H.
Konferenzbeitrag
1991Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors.
Newman, R.C.; Koidl, P.; Wagner, J.
Zeitschriftenaufsatz
1991Resonant tunneling in double quantum wells - the cases of strong and weak collisions.
Leo, K.; Shah, J.; Schmitt-Rink, S.; Schäfer, W.; Damen, T.C.; Göbel, E.O.; Köhler, K.
Konferenzbeitrag
1991RF and noise characterization of a monolithically integrated receiver on InP
Feiste, U.; Kaiser, R.; Mekonnen, G.G.; Schramm, C.; Trommer, D.; Unterborsch, G.
Konferenzbeitrag
1991Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure
Paraskevopoulos, A.; Weber, R.; Harde, P.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Subpicosecond four-wave mixing in GaAs/Al(x)Ga(1-x)As quantum wells
Leo, K.; Shah, J.; Schmitt-Rink, S.; Schäfer, W.; Müller, J.F.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.
Zeitschriftenaufsatz
1991Terahertz absorption between split subbands in coupled Quantum Wells.
Cunningham, J.; Köhler, K.; Nuss, M.C.; Roskos, H.; Shah, J.; Tell, B.
Konferenzbeitrag
1991Theoretical investigation of a meander coupler as fast tunable, narrowband multiplexer/demultiplexer for optical ATM-system application
Nolting, H.-P.
Konferenzbeitrag
1991Theoretical investigations of optical waveguide tapers on InGaAsP/InP
Nolting, H.P.; Weinert, C.M.
Zeitschriftenaufsatz
1991Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers
Rosenzweig, M.; Möhrle, M.; Düser, H.; Venghaus, H.
Zeitschriftenaufsatz
1991Time-resolved optical investigation of tunneling of carriers through single AlxGa1-xAs barriers
Rühle, W.W.; Heberle, A.P.; Alexander, M.G.W.; Nido, M.; Köhler, K.
Zeitschriftenaufsatz
1991Two-wavelength transmission: A rapid and precise method for measuring the light absorption in semiconductors
Sartorius, B.; Brandstattner, M.; Venghaus, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Variations of the confining potential of doped AlGaAs/GaAs Quantum Wells with the photon energy of excitation.
Harris, C.I.; Monemar, B.; Brunthaler, G.; Kalt, H.; Schweizer, T.; Köhler, K.
Zeitschriftenaufsatz
1990Characteristics of 1.5 µm InGaAs/InGaAsP MQW lasers
Duser, H.; Fidorra, F.; Franke, D.; Mohrle, M.; Rosenzweig, M.; Wolfram, P.; Grutzmacher, D.
Konferenzbeitrag
1990Comparative investigation of the interface quality of GaAs/AlGaAs quantum wells grown by MBE.
Schweizer, T.; Bachem, K.H.; Voigt, A.; Strunk, H.P.; Ganser, P.; Köhler, K.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
1990Control of a reactive ion etching process for InP and related materials by in-situ ellipsometry in the near infrared
Muller, R.
Konferenzbeitrag
1990Deep donor levels -DX centers- in III-V semiconductors.
Mooney, P.M.
Zeitschriftenaufsatz
1990The development of a polarization-diversity heterodyne receiver-waveguide switch on InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.P.; Schlak, M.; Weinert, C.M.
Konferenzbeitrag
1990Doping and diffusion behaviour of Fe in MOVPE grown InP layers
Franke, D.; Harde, P.; Wolfram, P.; Grote, N.
Zeitschriftenaufsatz
1990Dry chemical etching processes for the production of InP-based components
Niggebrugge, U.; Muller, R.
Konferenzbeitrag
1990Electron and hole tunneling transfer times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells under electric field.
Nido, M.; Alexander, M.G.W.; Rühle, W.E.; Köhler, K.
Konferenzbeitrag
1990Electron tunneling via gamma- and chi-states in GaAs/Al0.35Ga0.65As double quantum well structures
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Reimann, K.; Ploog, K.; Köhler, K.
Zeitschriftenaufsatz
1990Femtosecond transient-grating experiments in quantum wells
Schmitt-Rink, S.; Müller, J.F.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Schäfer, W.; Shah, J.
Konferenzbeitrag
1990High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors
Paraskevopoulos, A.; Bach, H.G.; Schroeter-Janssen, H.; Mekonnen, G.; Hensel, H.J.; Grote, N.
Konferenzbeitrag
1990Hydrogen passivation of Zn acceptors in InGaAs during reactive ion etching
Moehrie, M.
Zeitschriftenaufsatz
1990In situ etching depth monitoring for reactive ion etching of InGaAs(P)/InP heterostructures by ellipsometry
Muller, R.
Zeitschriftenaufsatz
1990Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Zeitschriftenaufsatz
1990Indirect stimulated emission at room temperature
Rinker, M.; Kalt, H.; Köhler, K.
Zeitschriftenaufsatz
1990Indirect stimulated emission at room temperature
Rinker, M.; Kalt, H.; Köhler, K.
Konferenzbeitrag
1990Meander coupler, a novel wavelength division multiplexer/demultiplexer
Bornholdt, C.; Kappe, F.; Muller, R.; Nolting, H.-P.; Reier, F.; Stenzel, R.; Venghaus, H.; Weinert, C.M.
Zeitschriftenaufsatz
1990Meander coupler: A novel structure for WDM-applications
Kappe, F.; Bornholdt, C.; Nolting, H.-P.; Reier, F.; Stenzel, R.; Venghaus, H.; Weinert, C.M.
Konferenzbeitrag
1990Multicomponent structure in the temperature-dependent persistent photoconductivity due to different DX centers in AlxGa1-xAs-Si.
Brunthaler, G.; Köhler, K.
Zeitschriftenaufsatz
1990Nondestructive thickness mapping of epitaxial InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.
Konferenzbeitrag
1990Optimization of extremely highly p-doped In0.53Ga0.47As:Be contact layers grown by MBE
Passenberg, W.; Harde, P.; Kunzel, H.; Trommer, D.
Konferenzbeitrag
1990A photoluminescence study of the transition from non-degenerate to degenerate doping in n-type silicon doped GaAs/AlGaAs quantum wells
Harris, C.; Monemar, B.; Kalt, H.; Schweizer, T.; Köhler, K.
Konferenzbeitrag
1990Polarization converter and splitter for a coherent receiver optical network on InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.-P.; Schlak, M.; Weinert, C.M.
Konferenzbeitrag
1990Properties of two-section traveling wave amplifiers
Ludwig, R.; Moerhrle, M.; Rosenzweig, M.; Schnabel, R.; Schunk, N.; Weber, H.G.
Konferenzbeitrag
1990Quantum beats from extended electronic states in quantum wells
Müller, J.F.; Schmitt-Rink, S.; Schäfer, W.; Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Konferenzbeitrag
1990Quantum beats of free and bound excitons in GaAs/Al(x)Ga(1-x)As quantum wells
Leo, K.; Shah, J.; Köhler, K.; Damen, T.C.
Zeitschriftenaufsatz
1990Quantum beats of light hole and heavy hole excitons in quantum wells.
Damen, T.C.; Köhler, K.; Leo, K.; Shah, J.
Zeitschriftenaufsatz
1990Raman spectroscopy of dopant impurities in homogeneously and planar -delta- doped III-V semiconductors.
Wagner, J.
Zeitschriftenaufsatz
1990Resonant-tunneling transfer times between asymmetric GaAs/Al(0.35)Ga(0.65)As double quantum wells
Alexander, M.G.W.; Nido, M.; Rühle, W.W.; Köhler, K.
Zeitschriftenaufsatz
1990Secondary ion mass spectroscopic investigation of GaInAsP/InP laser structures made by metalorganic vapor phase epitaxy regrowth
Harde, P.; Fidorra, F.; Venghaus, H.
Zeitschriftenaufsatz
1990Subpicosecond transient four-wave-mixing experiments. A novel method to study resonant tunneling.
Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Zeitschriftenaufsatz
1990Superior microwave performance of InGaAs JFETs grown by MBE
Trommer, D.; Umbach, A.; Passenburg, W.; Mekonnen, G.; Unterborsch, G.
Zeitschriftenaufsatz
1990TE/TM mode splitters on InGaAsP/InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.; Weinert, C.M.
Zeitschriftenaufsatz
1990Temperature dependence of persistent photo-conductivity due to DX centers in AlxGa1-xAs-Si.
Brunthaler, A.; Köhler, K.
Zeitschriftenaufsatz
1990Tunable TE/TM-mode convertor on (001)-InP-substrate
Schlak, M.; Weinert, C.M.; Albrecht, P.; Nolting, H.P.
Konferenzbeitrag
1990Tunneling in semiconductor heterostructures studied by subpicosecond four-wave mixing.
Damen, T.C.; Ganser, P.; Göbel, E.O.; Köhler, K.; Leo, K.; Shah, J.
Zeitschriftenaufsatz
1990Waveguide integrated PINFET on InP for receiver OEICs
Trommer, D.; Feiste, U.; Hochheim, S.; Kaiser, R.; Passenberg, W.; Reier, F.; Schramm, C.; Umbach, A.; Unterborsch, G.
Konferenzbeitrag
1990WDM components on the basis of InGaAsP/InP directional couplers
Bornholdt, C.; Kappe, F.; Nolting, H.P.; Stenzel, R.; Venghaus, H.; Weinert, C.M.
Konferenzbeitrag
1989Assessment of semi-insulating InP:Fe layers for substrate applications
Grote, N.; Bach, H.G.; Feifel, T.; Franke, D.; Harde, P.; Sartorious, B.; Wolfram, P.
Konferenzbeitrag
1989Beryllium and manganese diffusion in Ga0.47In0.53As during MBE-growth
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Konferenzbeitrag
1989Butt coupled photodiodes integrated with Y-branched optical waveguides on InP
Döldissen, W.; Fiedler, F.; Kaiser, R.; Mörl, L.
Zeitschriftenaufsatz
1989Capacitance-voltage investigations of rechargeable traps in isotype laser heterojunctions
Bach, H.-G.; Beister, G.
Konferenzbeitrag
1989Endpoint detection for CH4/H2 reactive ion etching of InGaAsP heterostructures by mass spectrometry
Schmid, H.; Fidorra, F.; Grutzmacher, D.
Konferenzbeitrag
1989Implanted-collector InGaAsP/InP heterojunction bipolar transistor
Su, L.M.; Grote, N.; Schumacher, P.; Franke, D.
Konferenzbeitrag
1989InP based integrated laser driver circuit
Paraskevopoulos, A.; Bach, H.G.; Mekonnen, G.; Schroeter-Janssen, H.; Fiedler, F.; Grote, N.
Konferenzbeitrag
1989Orientation-dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structures
Fidorra, F.; Harde, P.; Venghaus, H.; Grutzmacher, D.
Zeitschriftenaufsatz
1989Origin and penetration depth of thermal degradation in InP
Sartorius, B.; Pfanner, K.
Zeitschriftenaufsatz
1989Quality and applications of In(Ga)AlAs-layers
Schramm, C.; Kunzel, H.; Bornholdt, C.; Su, L.M.; Wehmann, H.H.
Konferenzbeitrag
1989Very high purity InP layers grown by adduct-MOVPE
Wolfram, P.; Reier, F.W.; Franke, D.; Schumann, H.
Zeitschriftenaufsatz
1988A comparative study on protection methods against InP substrate decomposition in liquid phase epitaxy
Pfanner, K.; Franke, D.; Sartorius, B.; Schlak, M.
Zeitschriftenaufsatz
1988Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs
Bach, H.G.; Fiedler, F.; Grote, N.; Bouadma, N.B.; Rose, B.; Devoldere, P.; Tegude, F.J.; Speier, P.; Wunstel, K.
Konferenzbeitrag
1988Optical waveguide/photodetector combination in OEIC-receiver equipment of future fibre optic telecommunication networks
Kaiser, R.
Konferenzbeitrag
1988Thermal degradation effects in InP
Sartorius, B.; Schlak, M.; Rosenzweig, M.; Parschke, K.
Zeitschriftenaufsatz
1988Waveguide-mirror components InGaAsP/InP
Albrecht, P.; Döldissen, W.; Niggebrügge, U.; Nolting, H.-P.; Schmid, H.
Konferenzbeitrag
1987Current-injection analysis of invertible InGaAsP/InP double-heterostructure bipolar transistors
Bach, H.G.; Grote, N.; Fiedler, F.
Konferenzbeitrag
1987Dielectrics for passivation of planar InP/InGaAs diodes
Unterborsch, G.; Bach, H.G.; Schmitt, F.; Schmidt, R.; Schlaak, W.
Konferenzbeitrag, Zeitschriftenaufsatz
1987Formation of p+(p-)n junctions in InP and their dependence on substrate concentration, time and temperature
Schmitt, F.; Mahnkopfe, M.
Konferenzbeitrag, Zeitschriftenaufsatz
1987Luminescence microscopy for quality control of material and processing
Satorius, B.; Franke, D.; Schlak, M.
Konferenzbeitrag, Zeitschriftenaufsatz
1987Plasma mass spectrometric analysis and control of reactive ion etching of InP and related compounds
Schmid, H.
Konferenzbeitrag
1987Self-aligned low-loss totally reflecting waveguide mirrors in InGaAsP/InP
Niggebrugge, U.; Albrecht, P.; Doldissen, W.; Nolting, H.-P.; Schmid, H.
Konferenzbeitrag
1987Self-aligned waveguide mirrors for optical integration on InGaAsP/InP
Albrecht, P.; Doldissen, W.; Niggerbrugge, U.; Nolting, H.P.; Schmid, H.
Konferenzbeitrag
1987Simultaneous fabrication of very low resistance ohmic contacts to n-InP and p-InGaAs
Kaumanns, R.; Grote, N.; Bach, H.-G.; Fidorra, F.
Konferenzbeitrag
1987Waveguide-integrated PIN photodiode on InP
Bornholdt, C.; Döldissen, W.; Fiedler, F.; Kaiser, R.; Kowalsky, W.
Zeitschriftenaufsatz
1986Characteristics of double-heterojunction InGaAsP/InP bipolar transistors
Grote, N.; Su, L.M.; Bach, H.-G.
Konferenzbeitrag
1986Electro-optic modulators in GaInAsP/InP
Krauser, J.; Albrecht, P.; Bornholdt, C.; Doldissen, W.; Niggebrugge, U.; Nolting, H.-P.; Schlak, M.
Konferenzbeitrag
1986Homogeneous linewidth and linewidth enhancement factor for a GaAs semiconductor laser
Sugimura, A.; Patzak, E.; Meissner, P.
Zeitschriftenaufsatz
1986Monolithic IO-technology-modulators and switches based on InP
Schlachetzki, A.
Konferenzbeitrag
1986A novel process for reactive ion etching on InP, using CH4/H2
Niggebrugge, U.; Klug, M.; Garus, G.
Konferenzbeitrag
1986Reactive ion beam etching of InP with N2 and N2/O2 mixtures
Katzschner, W.; Niggebrügge, U.; Löffler, R.; Schroeter-Janssen, H.
Zeitschriftenaufsatz
1985Experimental study of stability properties of injection-locked InGaAsP/InP laser diodes
Grosskopf, G.; Kuller, L.
Zeitschriftenaufsatz
1985High-efficiency phase modulators in InGaAsP/InP
Bornholdt, C.; Doldissen, W.; Franke, D.; Krauser, J.; Niggebrugge, U.; Nolting, H.-P.; Schmitt, F.
Konferenzbeitrag
1985An InGaAsP/InP double-heterojunction bipolar transistor for monolithic integration with a 1.5- mu m laser diode
Su, L.M.; Grote, N.; Kaumanns, R.; Katzschner, W.; Bach, H.G.
Zeitschriftenaufsatz
1985Molecular beam epitaxy of III-V compounds
Kunzel, H.
Konferenzbeitrag
1985A novel npn InGaAs bipolar transistor with a wide gap cadmium oxide (CdO) emitter
Su, L.M.; Grote, N.; Bach, H.G.; Doldissen, W.; Rosenzweig, M.
Konferenzbeitrag
1985NpnN double-heterojunction bipolar transistor on InGaAsP/InP
Su, L.M.; Grote, N.; Kaumanns, R.; Schroeter, H.
Zeitschriftenaufsatz
1985pnp-type InP/InGaAsP/InP bipolar transistor
Su, L.M.; Schroeter-Janssen, H.; Li, K.C.; Grote, N.
Zeitschriftenaufsatz
1984Diffused planar InP bipolar transistor with a cadmium oxide film emitter
Su, L.M.; Grote, N.; Schmitt, F.
Zeitschriftenaufsatz
1984Ion beam milling of InP with an Ar/O2-gas mixture
Katzchner, W.; Steckenborn, A.; Löffler, R.; Grote, N.
Zeitschriftenaufsatz
1984A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistor
Schmitt, F.; Su, L.M.; Franke, D.; Kaumanns, R.
Zeitschriftenaufsatz
1984A numerical investigation of lateral holeburning effects on the spectral behaviour of stripe geometry lasers
Meissner, P.; Patzak, E.; Yevick, D.
Zeitschriftenaufsatz
1983Electro-optical light modulation in InGaAsP/InP double heterostructure diodes
Bach, H.G.; Krauser, J.; Nolting, H.P.; Logan, R.A.; Reinhart, F.K.
Zeitschriftenaufsatz
1983Light guiding and electrooptical modulation in InGaAsP/InP double heterostructures
Albrecht, P.; Bach, H.G.; Bornholdt, C.; Doldissen, W.; Franke, D.; Grote, N.; Krauser, J.; Niggebrugge, U.; Nolting, H.P.; Schlak, M.; Tiedke, I.; Logan, R.A.; Reinhart, F.K.
Konferenzbeitrag
1983Passive optical GaInAsP/InP waveguides
Bornholdt, C.; Doldissen, W.; Franke, D.; Grote, N.; Krauser, J.; Niggebrugge, U.; Nolting, H.P.; Schlak, M.; Tiedke, I.
Zeitschriftenaufsatz
1982Spectral behaviour of InGaAsP/InP 1.3 mu m lasers and implications on the transmission performance of broadband Gbit/s signals
Wenke, G.; Enning, B.
Zeitschriftenaufsatz
1977Helicon diagrams of periodically laminated semiconducting plasma
Nolting, H.-P.
Zeitschriftenaufsatz
1977Investigation of the production and technical use of InSb single crystals periodically doped by means of the Peltier effect
Nolting, P.
Zeitschriftenaufsatz