Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2021A 75-305-GHz Power Amplifier MMIC with 10-14.9-dBm Pout in a 35-nm InGaAs mHEMT Technology
Thome, Fabian; Leuther, Arnulf
Zeitschriftenaufsatz
2021Limitations and Implementation Strategies of Interstage Matching in a 6-W, 28-38-GHz GaN Power Amplifier MMIC
Neininger, Philipp; John, Laurenz; Thome, Fabian; Friesicke, Christian; Brueckner, Peter; Quay, Rüdiger; Zwick, Thomas
Zeitschriftenaufsatz
2019Modeling of the impact of the substrate voltage on the capacitances of GaN-on-Si HEMTs
Albahrani, Sayed Ali; Mahajan, Dhawal; Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Schwantuschke, Dirk; Khandelwal, Sourabh
Zeitschriftenaufsatz
2019W-Band LNA MMICs based on a noise-optimized 50-nm gate-length metamorphic HEMT Technology
Thome, Fabian; Leuther, Arnulf; Heinz, Felix; Ambacher, Oliver
Konferenzbeitrag
201870-116-GHz LNAs in 35-nm and 50-nm gate-length metamorphic HEMT technologies for cryogenic and room-temperature operation
Thome, Fabian; Leuther, Arnulf; Gallego, Juan Daniel; Schäfer, Frank; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag
2018W-band SPDT switches in planar and tri-gate 100-nm gate-length GaN-HEMT technology
Thome, Fabian; Ture, Erdin; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Comparison of a 35-nm and a 50-nm gate-length metamorphic HEMT technology for millimeter-wave low-noise amplifier MMICs
Thome, Fabian; Leuther, Arnulf; Massler, Hermann; Schlechtweg, Michael; Ambacher, Oliver
Konferenzbeitrag
2017First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag