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| 2021 | Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
Manz, Christian; Leone, Stefano; Kirste, Lutz; Ligl, Jana; Frei, Kathrin; Fuchs, Theodor; Prescher, Mario; Waltereit, Patrick; Verheijen, Marcel A.; Graff, Andreas; Simon-Najasek, Michél; Altmann, Frank; Fiederle, Michael; Ambacher, Oliver | Zeitschriftenaufsatz |
| 2016 | Charakterisierung und Modellierung von metamorphen HEMT Strukturen im Millimeter- und Submillimeter-Wellenlängenbereich
Ohlrogge, Matthias
: Ambacher, Oliver | Dissertation |
| 2015 | Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate
Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O. | Konferenzbeitrag |
| 2012 | GaN-based millimeter-wave monolithic integrated circuits
Schwantuschke, D.; Kallfass, I.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2011 | Comparison of a single and a dual-gate GaN switching-amplifier for future communication systems
Heck, S.; Maroldt, S.; Bräckle, A.; Berroth, M.; Quay, R. | Konferenzbeitrag |
| 2010 | Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O. | Zeitschriftenaufsatz |
| 2010 | GaN-based submicrometer HEMTs with lattice-matched InAlGaN barrier grown by MBE
Lim, T.; Aidam, R.; Waltereit, P.; Henkel, T.; Quay, R.; Lozar, R.; Maier, T.; Kirste, L.; Ambacher, O. | Zeitschriftenaufsatz |
| 2009 | High efficiency digital GaN MMIC power amplifiers for future switch-mode based mobile communication systems
Maroldt, S.; Haupt, C.; Kiefer, R.; Bronner, W.; Müller, S.; Benz, W.; Quay, R.; Ambacher, O. | Konferenzbeitrag |
| 2001 | Industrial application of heterostructure device simulation
Palankovski, V.; Quay, R.; Selberherr, S. | Zeitschriftenaufsatz |
| 1995 | Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Strahle, S.; Kohn, E. | Konferenzbeitrag, Zeitschriftenaufsatz |
| 1994 | High gain operational amplifier implemented in 0.5 µm GaAs E/D HEMT technology
Feng, S.; Seitz, D.; Sauerer, J. | Zeitschriftenaufsatz |
| 1994 | Statistical characterization of GaAs E/D HEMT analog components for data conversion ICs
Feng, S.; Seitzer, D. | Konferenzbeitrag |
| 1993 | Untersuchungen an GaAs-HEMT-Analogkomponenten für überabtastende Analog/Digital-Umsetzer mit hoher Geschwindigkeit
Feng, S. | Dissertation |
| 1992 | Design on high performance GaAs latched comparator for data conversion applications
Feng, S.; Seitzer, D. | Konferenzbeitrag |
| 1991 | A 4 Gs/s and 10 mV latched comparator in 0.5 mu m GaAs HEMT technology
Feng, S.; Oehler, F.; Sauerer, J.; Hagelauer, R.; Seitzer, D. | Konferenzbeitrag |