Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1998Selective infill metalorganic molecular beam epitaxy of InP:Si n+/n- layers for buried collector double heterostructure bipolar transistors
Schelhase, S.; Bottcher, J.; Gibis, R.; Harde, P.; Paraskevopoulos, A.; Kunzel, H.
Zeitschriftenaufsatz
1997Investigation of Be-distribution profiles in MBE-grown GaInAs for optimization of HBT base structures
Passenberg, W.; Harde, P.; Paraskevopoulos, A.
Konferenzbeitrag
1991Application of localized Zn diffusion across heterointerfaces for the realization of a compact high-speed bipolar driver circuit on InGaAsP/InP
Weber, R.; Paraskevopoulos, A.; Schroeter-Janssen, H.; Bach, H.G.
Zeitschriftenaufsatz
1991An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs
Su, L.M.; Kunzel, H.; Bach, H.G.; Schlaak, W.; Grote, N.
Konferenzbeitrag
1991MBE overgrowth of implanted regions in InP:Fe substrates
Kunzel, H.; Gibis, R.; Schlaak, W.; Su, L.M.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure
Paraskevopoulos, A.; Weber, R.; Harde, P.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1990High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors
Paraskevopoulos, A.; Bach, H.G.; Schroeter-Janssen, H.; Mekonnen, G.; Hensel, H.J.; Grote, N.
Konferenzbeitrag
1989Implanted-collector InGaAsP/InP heterojunction bipolar transistor
Su, L.M.; Grote, N.; Schumacher, P.; Franke, D.
Konferenzbeitrag
1989Quality and applications of In(Ga)AlAs-layers
Schramm, C.; Kunzel, H.; Bornholdt, C.; Su, L.M.; Wehmann, H.H.
Konferenzbeitrag
1988Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs
Bach, H.G.; Fiedler, F.; Grote, N.; Bouadma, N.B.; Rose, B.; Devoldere, P.; Tegude, F.J.; Speier, P.; Wunstel, K.
Konferenzbeitrag
1987Current-injection analysis of invertible InGaAsP/InP double-heterostructure bipolar transistors
Bach, H.G.; Grote, N.; Fiedler, F.
Konferenzbeitrag