Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019190-GHz G-band GaN amplifier MMICs with 40 GHz of bandwidth
Ćwikliński, Maciej; Brueckner, Peter; Leone, Stefano; Friesicke, Christian; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019AlGaN/GaN high electron-mobility varactors on silicon substrate
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Consistent modelling of I-V and C-V behaviour of GaN HEMTs in presence of trapping
Hodges, Jason; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Khandelwal, Sourabh
Konferenzbeitrag
2019High-Q anti-series AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2019Large-signal modeling of a scalable high-Q AlGaN/GaN high electron-mobility varactor
Amirpour, Raul; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2019Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology
Thome, Fabian; Brueckner, Peter; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018A beyond 110 GHz GaN cascode low-noise amplifier with 20.3 dBm output power
Weber, Rainer; Ćwikliński, Maciej; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Brueckner, Peter; Quay, Rüdiger
Konferenzbeitrag
2018First full W-band GaN power amplifier MMICs with novel broadband radial stubs and 50 GHz of bandwidth
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Lozar, Roger; Massler, Hermann; Wagner, Sandrine; Quay, Rüdiger
Konferenzbeitrag
2018Full W-band GaN power amplifier MMICs using a novel type of broadband radial stub
Ćwikliński, Maciej; Friesicke, Christian; Brueckner, Peter; Schwantuschke, Dirk; Wagner, Sandrine; Lozar, Roger; Massler, Hermann; Quay, Rüdiger; Ambacher, Oliver
Zeitschriftenaufsatz
2018Galvanical isolated microinverter with GaN transistors for photovoltaic modules
Hensel, Andreas; Armbruster, Cornelius; Rouffaud, Gilles
Konferenzbeitrag
2016High voltage GaN-based Schottky diodes in non-isolated LED buck converters
Zibold, A.; Reiner, R.; Weiss, B.; Kunzer, M.; Quay, R.; Wagner, J.; Waltereit, P.; Ambacher, O.
Konferenzbeitrag
2015Threshold voltage engineering in GaN-based HFETs: A systematic study with the threshold voltage reaching more than 2 V
Hahn, H.; Benkhelifa, Fouad; Ambacher, O.; Brunner, F.; Noculak, A.; Kalisch, H.; Vescan, A.
Zeitschriftenaufsatz
2014A 92 GHz GaN HEMT voltage-controlled oscillator MMIC
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Raay, F. van; Ambacher, O.
Konferenzbeitrag
2013A 67 GHz GaN voltage-controlled oscillator MMIC with high output power
Weber, R.; Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.; Kallfass, I.
Zeitschriftenaufsatz
2013Deep-level characterization in GaN HEMTs. Pt.I: Advantages and limitations of drain current transient measurements
Bisi, D.; Meneghini, M.; Santi, C. de; Chini, A.; Dammann, M.; Brueckner, P.; Mikulla, M.; Meneghesso, G.; Zanoni, E.
Zeitschriftenaufsatz