Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Comparison of MOCVD and MBE regrowth for CAVET fabrication
Kotzea, Simon; Witte, Wiebke; Godejohann, Birte-Julia; Marx, Mathias; Heuken, Michael; Kalisch, Holger; Aidam, Rolf; Vescan, Andrei
Zeitschriftenaufsatz
2019Design, analysis and evaluation of a broadband high-power amplifier for Ka-band frequencies
Neininger, Philipp; John, Laurenz; Brueckner, Peter; Friesicke, Christian; Quay, Rüdiger; Zwick, Thomas
Konferenzbeitrag
2019Integrated current sensing in GaN power ICs
Mönch, Stefan; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2018A 5 W AlGaN/GaN power amplifier MMIC for 25-27 GHz downlink applications
Samis, Stanislav; Friesicke, Christian; Feuerschüz, Philip; Lozar, Roger; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, A.F.
Konferenzbeitrag
2018Broadband GaN-based power amplifier MMIC and module for V-band measurement applications
Schwantuschke, Dirk; Brueckner, Peter; Amirpour, Raul; Tessmann, Axel; Kuri, Michael; Rießle, Markus; Massler, Hermann; Quay, Rüdiger
Konferenzbeitrag
2018Cathodoluminescence spectroscopy for failure analysis and process development of GaN-based microelectronic devices
Monachon, C.; Zielinski, M.S.; Berney, J.; Poppitz, David; Graff, Andreas; Breuer, Steffen; Kirste, Lutz
Konferenzbeitrag
2018High-power microwave GaN/AlGaN HEMTs and MMICs on SiC and silicon substrates for modern radio communication
Quay, Rüdiger; Schwantuschke, Dirk; Ture, Erdin; Raay, Friedbert van; Friesicke, Christian; Krause, Sebastian; Müller, Stefan; Breuer, Steffen; Godejohann, Birte-Julia; Brueckner, Peter
Zeitschriftenaufsatz
2018Instabilities by parasitic substrate-loop of GaN-on-Si HEMTs in half-bridges
Mönch, Stefan; Weiss, Beatrix; Reiner, Richard; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2018mm-Wave operation of AlN/GaN-devices and MMICs at V- & W-band
Schwantuschke, Dirk; Godejohann, Birte-Julia; Brueckner, Peter; Tessmann, Axel; Quay, Rüdiger
Konferenzbeitrag
2018Multi-stage cascode in high-voltage AlGaN/GaN-on-Si technology
Reiner, Richard; Waltereit, Patrick; Mönch, Stefan; Dammann, Michael; Weiss, Beatrix; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2018Two Q-band power amplifier MMICs in 100 nm AlGaN/GaN HEMT technology
Feuerschütz, Philip; Friesicke, Christian; Lozar, Roger; Wagner, Sandrine; Maier, Thomas; Brueckner, Peter; Quay, Rüdiger; Jacob, Arne F.
Konferenzbeitrag
2017Atomic layer etching of gallium nitride (0001)
Kauppinen, Christoffer; Khan, Sabbir Ahmed; Sundqvist, Jonas; Suyatin, Dmitry B.; Suihkonen, Sami; Kauppinen, Esko I.; Sopanen, Markku
Zeitschriftenaufsatz
2017Demonstration of an RF front-end based on GaN HEMT technology
Ture, Erdin; Musser, Markus; Hülsmann, Axel; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Effect of substrate termination on switching loss and switching time using 600 V GaN-on-Si HEMTs with integrated gate driver in half-bridges
Mönch, Stefan; Reiner, Richard; Weiss, Beatrix; Waltereit, Patrick; Quay, Rüdiger; Ambacher, Oliver; Kallfass, Ingmar
Konferenzbeitrag
2017First demonstration of w-band tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
Ture, Erdin; Brueckner, Peter; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rüdiger; Ambacher, Oliver
Konferenzbeitrag
2017Materials response to glancing incidence femtosecond laser ablation
Echlin, M.P.; Titus, M.S.; Straw, M.; Gumbsch, P.; Pollock, T.M.
Zeitschriftenaufsatz
2016A 40 dBm AlGaN/GaN HEMT power amplifier MMIC for SatCom applications at K-Band
Friesicke, C.; Feuerschütz, P.; Quay, R.; Ambacher, O.; Jacob, A.F.
Konferenzbeitrag
2016Broadband E-band power amplifier MMIC based on an AlGaN/GaN HEMT technology with 30 dBm output power
Schwantuschke, D.; Godejohann, B.-J.; Breuer, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
Ture, E.; Brueckner, P.; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Konferenzbeitrag
2016A GaN-based 10.1MHz class-F-1 300 W continuous wave amplifier targeting industrial power applications
Maier, F.; Krausse, D.; Gruner, D.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Growth of Ga₂O₃ by furnace oxidation of GaN studied by perturbed angular correlations
Steffens, Michael; Vianden, Reiner; Pasquevich, Alberto F.
Zeitschriftenaufsatz, Konferenzbeitrag
2016High-current submicrometer tri-gate GaN high-electron mobility transistors with binary and quaternary barriers
Ture, E.; Brückner, P.; Godejohann, B.-J.; Aidam, R.; Alsharef, M.; Granzner, R.; Schwierz, F.; Quay, R.; Ambacher, O.
Zeitschriftenaufsatz
2016Monolithically-integrated power circuits in high-voltage GaN-on-Si heterojunction technology
Reiner, R.; Waltereit, P.; Weiss, B.; Mönch, S.; Wespel, M.; Müller, S.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Performance of tri-gate AlGaN/GaN HEMTs
Alsharef, M.; Granzner, R.; Schwierz, F.; Ture, E.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016A Q-band power amplifier MMIC using 100 nm AlGaN/GaN HEMT
Feuerschütz, P.; Friesicke, C.; Quay, R.; Jacob, A.F.
Konferenzbeitrag
2016Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
Mönch, S.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2016Slew rate control of a 600 V 55 mΩ GaN cascode
Endruschat, A.; Heckel, T.; Reiner, R.; Waltereit, P.; Quay, R.; Ambacher, O.; März, M.; Eckardt, B.; Frey, L.
Konferenzbeitrag
2015High-gain AlGaN/GaN HEMT single chip e-band power amplifier MMIC with 30 dBm output power
Ture, E.; Schwantuschke, D.; Tessmann, A.; Wagner, S.; Brueckner, P.; Mikulla, M.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015High-gain over 30% PAE power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC
Kaleem, S.; Kühn, J.; Quay, R.; Hein, M.
Konferenzbeitrag
2015Index-antiguiding in narrow-ridge GaN-based laser diodes investigated by measurements of the current-dependent gain and index spectra and by self-consistent simulation
Redaelli, L.; Wenzel, H.; Piprek, J.; Weig, T.; Einfeldt, S.; Martens, M.; Lükens, G; Schwarz, U.T.; Kneissl, M.
Zeitschriftenaufsatz
2015Integrated reverse-diodes for GaN-HEMT structures
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2015Microwave monolithic integrated gallium-nitride switches for low static power reconfigurable switch matrix with passive transparent state for power failure redundancy
Kaleem, S.; Kühn, J.; Quay, R.; Hein, M.A.
Konferenzbeitrag
2015Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015Performance and parasitic analysis of sub-micron scaled tri-gate AlGaN/GaN HEMT design
Ture, E.; Brückner, P.; Raay, F. van; Quay, R.; Ambacher, O.; Alsharef, M.; Granzner, R.; Schwierz, F.
Konferenzbeitrag
2015Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015Vertical buffer leakage and temperature effects on the breakdown performance of GaN/AlGaN HEMTs on Si substrate
Benkhelifa, F.; Müller, S.; Polyakov, V.M.; Breuer, S.; Czap, H.; Manz, C.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2014Comparison of second-harmonic matching of AlGaN/GaN HEMTs at K-band
Friesicke, C.; Quay, R.; Jacob, A.F.
Konferenzbeitrag
2014K-band power amplifiers in a 100 nm GaN HEMT microstrip line MMIC technology
Friesicke, C.; Jacob, A.F.; Quay, R.
Konferenzbeitrag
2013AlGaN/GaN-based variable gain amplifiers for W-band operation
Diebold, S.; Müller, D.; Schwantuschke, D.; Wagner, S.; Quay, R.; Zwick, T.; Kallfass, I.
Konferenzbeitrag
2013High-efficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies
Chéron, J.; Campovecchio, M.; Quéré, R.; Schwantuschke, D.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2013High-gain millimeter-wave AlGaN/GaN transistors
Schwantuschke, D.; Brueckner, P.; Quay, R.; Mikulla, M.; Ambacher, O.
Zeitschriftenaufsatz
2013A linear 4W power amplifier at K-band using 250nm AlGaN/GaN HEMTs
Friesicke, C.; Quay, R.; Rohrdantz, B.; Jacob, A.F.
Konferenzbeitrag
2013Ultra-wideband GaN MMIC chip set and high power amplifier module for multi-function defense AESA applications
Schmid, U.; Sledzik, H.; Schuh, P.; Schroth, J.; Oppermann, M.; Brueckner, P.; Raay, F. van; Quay, R.; Seelmann-Eggebert, M.
Zeitschriftenaufsatz
2012Continuous-classF3 power amplifier mode varying simultaneously first 3 harmonic impedances
Carrubba, V.; Quay, R.; Schlechtweg, M.; Ambacher, O.; Akmal, M.; Lees, J.; Benedikt, J.; Tasker, P.J.; Cripps, S.C.
Konferenzbeitrag
2012Fractal structures for low-resistance large area AlGaN/GaN power transistors
Reiner, R.; Waltereit, P.; Benkhelifa, F.; Müller, S.; Walcher, H.; Wagner, S.; Quay, R.; Schlechtweg, M.; Ambacher, O.
Konferenzbeitrag
2012A high gain SiGe-GaN switching power amplifier in the GHz-range
Heck, S.; Bräckle, A.; Berroth, M.; Maroldt, S.; Quay, R.
Konferenzbeitrag
2012An integrated 12 Gbps switch-mode driver MMIC with 5 V(PP) for digital transmitters in 100 nm GaN technology
Maroldt, S.; Brueckner, P.; Quay, R.; Ambacher, O.; Maier, S.; Wiegner, D.; Pascht, A.
Konferenzbeitrag
2011Broadband GaN-based switch-mode core MMICs with 20 W output power operating at UHF
Maroldt, S.; Quay, R.; Haupt, C.; Ambacher, O.
Konferenzbeitrag
2011GaN HFET MMICs with integrated Schottky-diode for highly efficient digital switch-mode power amplifiers at 2 GHz
Maroldt, S.; Quay, R.; Haupt, C.; Kiefer, R.; Wiegner, D.; Ambacher, O.
Zeitschriftenaufsatz
2010AlGaN/GaN mixer MMICs, and RF front-end receivers for C-, Ku-, and Ka-band space applications
Do, M.-N.; Seelmann-Eggebert, M.; Quay, R.; Langrez, D.; Cazaux, J.-L.
Konferenzbeitrag
2010Design and realization of GaN RF-devices and circuits from 1 to 30 GHz
Kühn, J.; Musser, M.; Raay, F. van; Kiefer, R.; Seelmann-Eggebert, M.; Mikulla, M.; Quay, R.; Rödle, T.; Ambacher, O.
Zeitschriftenaufsatz
2010Efficient AlGaN/GaN linear and digital-switch-mode power amplifiers for operation at 2 GHz
Maroldt, S.; Wiegner, D.; Vitanov, S.; Palankovski, V.; Quay, R.; Ambacher, O.
Zeitschriftenaufsatz
2010GaN devices for communication applications: Evolution of amplifier architectures
Schmid, U.; Reber, R.; Chartier, S.; Widmer, K.; Oppermann, M.; Heinrich, W.; Meliani, C.; Quay, R.; Maroldt, S.
Zeitschriftenaufsatz
2009Effect of annealing on the properties of indium-tin-oxynitride films as ohmic contacts for GaN-based optoelectronic devices
Himmerlich, M.; Koufaki, M.; Ecke, G.; Mauder, C.; Cimalla, V.; Schaefer, J.A.; Kondilis, A.; Pelekanos, N.T.; Modreanu, M.; Krischok, S.; Aperathitis, E.
Zeitschriftenaufsatz
2009Gallium nitride MMICs for future reconnaissance and imaging applications
Quay, R.; Mikulla, M.; Waltereit, P.; Raay, F. van; Dammann, M.; Kühn, J.; Ambacher, O.; Schuh, P.
Konferenzbeitrag
2009Gallium nitride MMICs for mm-wave power operation
Quay, R.; Maroldt, S.; Haupt, C.; Heijningen, M. van; Tessmann, A.
Zeitschriftenaufsatz
2008Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
Tonisch, K.; Buchheim, C.; Niebelschütz, F.; Schober, A.; Gobsch, G.; Cimalla, V.; Ambacher, O.; Goldhahn, R.
Zeitschriftenaufsatz
2008Sapphire-GaN-based planar integrated free-space optical system
Hofmann, M.; Hauguth-Frank, S.; Lebedev, V.; Ambacher, O.; Sinzinger, S.
Zeitschriftenaufsatz
1999X-ray analysis of the texture of heteroepitaxial gallium nitride films
Herres, N.; Obloh, H.; Bachem, K.H.; Helmig, K.
Zeitschriftenaufsatz
1995Basic studies of gallium Nitride growth on Sapphire by metalorganuc Chemical Vapor Deposition and optical properties of deposited layers
Niebuhr, R.; Bachem, K.; Dombrowski, K.; Maier, M.; Pletschen, W.; Kaufmann, U.
Zeitschriftenaufsatz