Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2018Direct growth of III–V/silicon triple-junction solar cells with 19.7% efficiency
Feifel, Markus; Ohlmann, Jens; Benick, Jan; Hermle, Martin; Belz, Jürgen; Beyer, Andreas; Volz, Kerstin; Hannappel, Thomas; Bett, Andreas W.; Lackner, David; Dimroth, Frank
Zeitschriftenaufsatz
2016Influence of Very Efficient Back Reflectors on the Quantum Efficiency of Solar Cells
Micha, D.N.; Walker, A.; Siefer, G.; Dimroth, F.; Bett, A.W.
Konferenzbeitrag
2016Photoconductive antennas based on low temperature grown GaAs on silicon infstrates for broadband terahertz generation and detection
Klos, Matthias; Bartholdt, Richard; Klier, Jens; Lampin, Jean François; Beigang, René
Konferenzbeitrag
2014The photonic solar cell. System design and efficiency estimations
Höhn, O.; Kraus, T.; Schwarz, U.T.; Bläsi, B.
Konferenzbeitrag
2013Generation and detection of terahertz radiation up to 4.5 THz by low-temperature grown GaAs photoconductive antennas excited at 1560 nm
Rämer, Jan-Martin; Ospald, Frank; Freymann, Georg von; Beigang, René
Zeitschriftenaufsatz
2013Generation and detection of THz radiation up to 4.5 THz using LTG-GaAs PCAs illuminated at 1560 nm
Rämer, Jan-Martin; Ospald, Frank; Freymann, Georg von; Beigang, René
Konferenzbeitrag
2012Comparison of THz emitters and detectors pumped at 1560 nm: DAST, ErAs:InGaAs and LTG GaAs
Ospald, F.; Zouaghi, W.; Rämer, J.-M.; Beigang, René
Konferenzbeitrag
2007Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AIAs/AIAsSb
Grimm, C.V.-B.; Priegnitz, M.; Winnerl, S.; Schneider, H.; Helm, M.; Biermann, K.; Künzel, H.
Zeitschriftenaufsatz
2007Vertically coupled GalnAsP/lnP microring lasers fabricated by using full wafer bonding
Heidrich, H.; Hamacher, M.; Troppenz, U.; Syvridis, D.; Alexandropoulos, D.; Mikroulis, S.; Tee, C.W.; Williams, K.; Dragoi, V.; Alexe, M.; Cristea, D.; Kusko, C.; Kusko, M.
Konferenzbeitrag
2005Materials investigation of gallium arsenide for direct converting energy sensitive x-ray detectors
Kröning, M.; Besse, I.; Baumbach, T.; Berthold, A.; Melkadze, R.G.; Lezhneva, T.M.; Khvedelidze, L.B.; Kalandadze, G.D.
Konferenzbeitrag
2003Identification of a Br-correlated bandgap state in GaAs by radiotracer spectroscopy
Albrecht, F.; Pasold, G.; Grillenberger, J.; Achtziger, N.; Witthuhn, W.; Risse, M.; Vianden, R.; Dietrich, M.
Zeitschriftenaufsatz
2002All-active InGaAsP/InP ring cavities for widespread functionalities in the wavelength domain
Troppenz, U.; Hamacher, M.; Rabus, D.G.; Heidrich, H.
Konferenzbeitrag
2002Box-like filter response of triple ring resonators with integrated SOA sections based on GaInAsP/InP
Rabus, D.G.; Hamacher, M.; Heidrich, H.; Troppenz, U.
Konferenzbeitrag
2002High-performance all-active tapered 1550 nm InGaAsP-BH-FP lasers
Möhrle, M.; Roehle, H.; Sigmund, A.; Suna, A.; Reier, F.
Konferenzbeitrag
2002High-Q channel-dropping filters using ring resonators with integrated SOAs
Rabus, D.G.; Hamacher, M.; Troppenz, U.; Heidrich, H.
Zeitschriftenaufsatz
2002Low-temperature-grown 1.55 mu m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response
Kuenzel, H.; Biermann, K.; Boettcher, J.; Harde, P.; Kurtzweg, M.; Schneider, R.; Neumann, W.; Nickel, D.; Reimann, K.; Woerner, M.; Elsaesser, T.
Konferenzbeitrag
2001'On-wafer' surface implanted high power, picosecond pulse InGaAsP/InP ( lambda =1.53-1.55 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Zeitschriftenaufsatz
20011300 nm GaAs-based microcavity LED incorporating InAs/GaInAs quantum dots
Kovshb, A.R.; Maleev, N.A.; Sakharov, A.V.; Moeller, C.; Krestnikov, I.L.; Kovsh, A.R.; Mikhrin, S.S.; Zhukov, A.E.; Ustinov, V.M.; Passenberg, W.; Pawlowski, E.; Kuenzel, H.; Tsatsul'nikov, A.F.; Ledentsov, N.N.; Bimberg, D.; Alferov, Z.I.
Zeitschriftenaufsatz, Konferenzbeitrag
2001Fabrication of InGaAsP/InP ridge waveguide lasers with dry etched facets using chemically assisted ion beam etching and a simple photoresist mask
Paraskevopoulos, A.; Hensel, H.-J.; Molzow, W.-D.; Janiak, K.; Suryaputra, E.; Roehle, H.; Wolfram, P.; Ebert, W.
Konferenzbeitrag
2001High single-mode-yield multiple-wavelength DFB-laser arrays in the 1.55 mu m range
Kreissl, J.; Troppenz, U.; Rehbein, W.; Hüttl, B.; Lenz, E.; Venghaus, H.; Fidorra, F.
Konferenzbeitrag
2001Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
Künzel, H.; Biermann, K.; Nickel, D.; Elsaesser, T.
Konferenzbeitrag, Zeitschriftenaufsatz
2001MMI-coupled ring resonators in GaInAsP-InP
Rabus, D.G.; Hamacher, M.
Zeitschriftenaufsatz
2000"On-wafer" surface implanted high power, picosecond pulse InGaAs/InP ( lambda -1.53-1.55 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Konferenzbeitrag
2000Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas
Schroeter-Janssen, H.; Roehle, H.; Franke, D.; Bochnia, R.; Harde, P.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
2000Conservation of low dark current of InGaAs photodiodes after NH3/HF etch with a BCB passivation layer
Schmidt, D.; Trommer, D.
Konferenzbeitrag
2000Detuned grating multi-section-RW-DFB-lasers for high speed optical signal processing
Möhrle, M.; Sartorius, B.; Bornholt, C.; Bauer, S.; Brox, O.; Sigmund, A.; Steingrüber, R.; Radziunas, M.; Wünsche, H.J.
Konferenzbeitrag
2000High-power, picosecond pulse generation from surface implanted InGaAsP/InP ( lambda =1.53 mu m) laser diodes
Paraskevopoulos, A.; Hensel, H.-J.; Schelhase, S.; Frahm, J.; Kubler, J.; Denker, A.; Gubenko, A.; Portnoi, E.L.
Konferenzbeitrag
2000Integratable high-power small-linewidth lambda /4 phase-shifted 1.55 mu m InGaAsP-InP-ridge-waveguide DFB-lasers
Mohrle, M.; Sigmund, A.; Kreissl, J.; Reier, F.; Steingrüber, R.; Rehbein, W.; Roehle, H.
Konferenzbeitrag
2000MBE growth of single crystalline AlInAs/GaInAs MQWs at the low growth temperature limit
Biermann, K.; Kunzel, H.; Elsasser, T.
Konferenzbeitrag
2000MOMBE selective infill growth of InP/GaInAs for quantum dot formation
Gibis, R.; Schelhase, S.; Steingrüber, R.; Urmann, G.; Kunzel, H.; Thiel, S.; Stier, O.; Bimberg, D.
Konferenzbeitrag, Zeitschriftenaufsatz
2000Monolithic integration of lasers, photodiodes, waveguides and spot size converters on GaInAsP/InP for photonic IC applications
Hamacher, M.; Kaiser, R.; Heidrich, H.; Albrecht, P.; Borchert, B.; Janiak, K.; Löffler, R.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.
Konferenzbeitrag
2000MOVPE-based in situ etching of In(GaAs)P/InP using tertiarybutylchloride
Wolfram, P.; Ebert, W.; Kreissl, J.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
2000Optical crosstalk within monolithic transceiver ICs on GaInAsP/InP
Kaiser, R.; Hamacher, M.; Heidrich, H.; Albrecht, P.; Janiak, K.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.
Konferenzbeitrag
2000Optimizing Fe-doped semi-insulating optical waveguide layers: Detection of interface layer conduction
Bach, H.-G.; Ebert, W.; Umbach, A.; Schramm, C.; Hubsch, R.; Seeger, A.
Konferenzbeitrag
1999Monolithic integration of III-V microcavity LEDs on silicon drivers using conformal epitaxy
Gerard, B.; Marcadet, X.; Etienne, P.; Pribat, D.; Friedrich, D.; Eichholz, J.; Bernt, H.; Carlin, J.-F.; Ilegems, M.
Konferenzbeitrag
1999Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP
Biermann, K.; Hase, A.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1999Packaging of OEICs with tapered fibers for optical communications systems with up to 45 GHz modulation bandwidth
Fischer, U.H.P.; Peters, K.; Ziegler, R.; Pech, D.; Kilk, A.; Mekonnen, G.G.; Jacumeit, G.
Konferenzbeitrag
1999Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS
Harde, P.; Gibis, R.; Kaiser, R.; Kizuki, H.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
199855 GHz dynamic frequency divider IC
Lao, Z.; Thiede, A.; Hornung, J.; Schlechtweg, M.; Lienhart, H.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Seibel, J.; Sedler, M.; Kaufel, G.
Zeitschriftenaufsatz
1998Design, fabrication and characterization of narrow band photoreceiver OEICs based on InP
Engel, T.; Strittmatter, A.; Passenberg, W.; Seeger, A.; Steingrüber, R.; Mekonnen, G.G.; Unterborsch, G.; Bimberg, D.
Konferenzbeitrag
1998Effect of birefringence in a bulk semiconductor optical amplifier on four-wave mixing
Diez, S.; Schmidt, C.; Ludwig, R.; Weber, H.G.; Doussiere, P.; Ducellier, T.
Zeitschriftenaufsatz
1998Full-duplex WDM transceiver PICs
Hamacher, M.; Heidrich, H.; Kaiser, R.; Albrecht, P.; Ebert, W.; Malchow, S.; Möhrle, M.; Rehbein, W.; Schroeter-Janssen, H.; Stenzel, R.
Konferenzbeitrag
1998High-power performance of a high-speed photodetector
Unterborsch, G.; Trommer, D.; Umbach, A.; Ludwig, R.; Bach, H.G.
Konferenzbeitrag
1998InGaAs photodetector with integrated biasing network for mm-wave applications
Trommer, D.; Umbach, A.; Unterborsch, G.
Konferenzbeitrag
1998Laser/waveguide integration utilizing selective area MOMBE regrowth for photonic IC applications
Kunzel, H.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Konferenzbeitrag
1998Metalorganic molecular beam epitaxial growth of semi-insulating GaInAsP( lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Zeitschriftenaufsatz
1998MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs
Kuenzel, H.; Gibis, R.; Kizuki, H.; Albrecht, P.; Ebert, S.; Harde, P.; Malchow, S.; Kaiser, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1998Polarisation insensitive meander-type wavelength demultiplexer with large tuning range
Trommer, D.; Arps, M.; Kreissl, J.; Steingrüber, R.; Ebert, W.; Venghaus, H.
Konferenzbeitrag
1998Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
1998Selective MOMBE growth of InP-based waveguide/laser butt-joints
Kuenzel, H.; Ebert, S.; Gibis, R.; Kaiser, R.; Kizuki, H.; Malchow, S.; Urmann, G.
Zeitschriftenaufsatz
1998A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure
Mörl, L.; Bornholdt, C.; Hoffmann, D.; Matzen, K.; Mekonnen, G.G.; Reier, F.W.
Konferenzbeitrag
199770 GHz long-wavelength photodetector
Unterborsch, G.; Umbach, A.; Trommer, D.; Mekonnen, G.G.
Konferenzbeitrag
1997Barrier composition dependence of the emission properties of AlGaInAs/GaInAs quantum wells grown by molecular beam epitaxy
Hase, A.; Chew-Walter, A.; Kuenzel, H.
Zeitschriftenaufsatz
1997Evaluation of defect densities on LP-MOVPE grown InGaAsP in dependence of InP substrate type
Franke, D.; Grote, N.
Konferenzbeitrag
1997High-frequency behavior of waveguide integrated photodiodes monolithically integrated on InP using optical butt coupling
Umbach, A.; Leone, A.M.; Unterborsch, G.
Zeitschriftenaufsatz
1997Highly reproducible and defect-free MOVPE overgrowth of InGaAsP-based DFB gratings
Franke, D.; Roehle, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1997Investigation of Be-distribution profiles in MBE-grown GaInAs for optimization of HBT base structures
Passenberg, W.; Harde, P.; Paraskevopoulos, A.
Konferenzbeitrag
1997Large- and selective-area LP-MOVPE growth of InGaAsP-based bulk and QW layers under nitrogen atmosphere
Roehle, H.; Schroeter-Janssen, H.; Kaiser, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1997LP-MOVPE growth of laser structures using nitrogen carrier gas
Roehle, H.; Schroeter-Janssen, H.
Konferenzbeitrag
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1997MBE regrowth on AlGaInAs DFB gratings using in-situ hydrogen radical cleaning
Kuenzel, H.; Boettcher, J.; Hase, A.; Hensel, H.-J.; Janiak, K.; Urmann, G.; Paraskevopoulos, A.
Konferenzbeitrag, Zeitschriftenaufsatz
1997MOMBE growth of semi-insulating GaInAsP(lambda g=1.05 mu m):Fe optical waveguides for integrated photonic devices
Kunzel, H.; Albrecht, P.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Konferenzbeitrag
1997MOVPE growth of a polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier MQW waveguide structure
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Morl, L.; Weinert, C.M.
Konferenzbeitrag
1997Selective MOMBE growth behaviour at the lateral interface of waveguide/laser butt-joints
Kunzel, H.; Ebert, S.; Gibis, R.; Kaiser, R.; Kizuki, H.; Malchow, S.
Konferenzbeitrag
1997Strain compensated GaInAs/AlInAs tunnelling barrier MQW structure for polarisation independent optical switching
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Mörl, L.; Weinert, C.M.
Konferenzbeitrag
1997Surface preparation for molecular beam epitaxy-regrowth on metalorganic vapour phase epitaxy grown InP and InGaAsP layers
Passenberg, W.; Schlaak, W.
Zeitschriftenaufsatz
199627 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier
Umbach, A.; Passenberg, W.; Unterborsch, G.; Mekonnen, G.G.; Schlaak, W.; Schramm, C.; Ebert, W.; Wolfram, P.; Bach, H.-G.; Waasen, S. van; Bertenburg, R.M.; Janssen, G.; Reuter, R.; Auer, U.; Tegude, F.-J.
Konferenzbeitrag
1996Bi-directional photonic integrated transceivers for optical communication systems
Heidrich, H.; Hamacher, M.; Kaiser, R.; Wenger, G.; Albrecht, P.; Löffler, R.; Malchow, S.; Rehbein, W.; Schroeter-Janssen, H.; Steingrüber, R.
Konferenzbeitrag
1996Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP
Schramm, C.; Schlaak, W.; Mekonnen, G.G.; Passenberg, W.; Umbach, A.; Seeger, A.; Wolfram, P.; Bach, H.-G.
Zeitschriftenaufsatz
1996Design of fiber-matched uncladded rib waveguides on InP with polarization-independent mode matching loss of 1 dB
Weinert, C.M.
Zeitschriftenaufsatz
1996Design of fibre matched uncladded rib waveguides on InP with polarization independent fibre coupling loss of 1 dB
Weinert, C.M.
Konferenzbeitrag
1996GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits
Schlaak, W.; Passenberg, W.; Schramm, C.; Mekonnen, G.G.; Umbach, A.; Ebert, W.; Bach, H.-G.
Konferenzbeitrag
1996Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures
Reier, F.W.; Bornholdt, C.; Hoffmann, D.; Kappe, F.; Mörl, L.
Konferenzbeitrag
1996Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W.
Konferenzbeitrag
1996Integration of polarisation independent mode transformers with uncladded InGaAsP/InP rib waveguides
Albrecht, P.; Heidrich, H.; Löffler, R.; Mörl, L.; Reier, F.; Weinert, C.M.
Zeitschriftenaufsatz
1996LP-MOVPE growth of InGaAsP/InP using nitrogen as carrier gas
Roehle, H.; Schroeter-Janssen, H.
Konferenzbeitrag
1996MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration
Passenberg, W.; Schlaak, W.; Umbach, A.
Konferenzbeitrag
1996MOMBE growth of high quality GaInAsP (lambda g=1.05 mu m) for waveguide applications
Kuenzel, H.; Albrecht, P.; Gibis, R.; Hamacher, M.; Schelhase, S.
Konferenzbeitrag, Zeitschriftenaufsatz
1996MOMBE selective infill growth of InP:Si and InGaAs:Si and large area MOMBE regrowth
Schelhase, S.; Boettcher, J.; Gibis, R.; Kuenzel, H.; Paraskevopoulos, A.
Konferenzbeitrag, Zeitschriftenaufsatz
1996Monolithically integrated nonlinear interferometers for all-optical switching
Jahn, E.; Agrawal, N.; Ehrke, H.-J.; Pieper, W.; Franke, D.; Furst, W.; Weinert, C.M.
Konferenzbeitrag
1996Polarization independent integrated mode transformer for uncladded InGaAsP/InP rib waveguides without epitaxial regrowth
Albrecht, P.; Heidrich, H.; Löffler, R.; Mörl, L.; Reier, F.; Weinert, C.M.
Konferenzbeitrag
1996Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Mekonnen, G.G.; Schlaak, W.; Schramm, C.; Ebert, W.; Wolfram, P.; Waasen, S. van; Bertenburg, R.M.; Janssen, G.; Reuter, R.; Auer, U.; Tegude, F.-J.
Konferenzbeitrag
1996Uncladded InGaAsP/InP rib waveguides with integrated thickness tapers for efficient fibre-chip butt coupling
Mörl, L.; Weinert, C.M.; Reier, F.; Stoll, L.; Nolting, H.-P.
Zeitschriftenaufsatz
1995Chemical analysis of a C12/BCl3/IBr3 chemically assisted ion-beam etching process for GaAs and InP laser-mirror fabrication under cryo-pumped ultrahigh vacuum conditions
Daleiden, J.; Eisele, K.; Sah, R.E.; Schmidt, K.H.; Ralston, J.D.
Zeitschriftenaufsatz
1995Coexistence of the Franz-Keldysh and Wannier-Stark effect in semiconductor superlattices
Linder, N.; Schmidt, K.H.; Geisselbrecht, W.; Döhler, G.H.; Grahn, H.T.; Ploog, K.; Schneider, H.
Zeitschriftenaufsatz
1995Controllable self-pulsations in multi-section DFB lasers with an integrated phase-tuning section
Sartorius, B.; Möhrle, M.; Reichenbacher, S.; Ebert, W.
Zeitschriftenaufsatz
1995Entwurf und Charakterisierung schneller GaAs-Abtasthalteglieder hoher Genauigkeit
Rohmer, G.
Dissertation
1995External-field-induced electric dipole moment of biexcitons in a semiconductor
Leisching, P.; Ott, R.; Haring Bolivar, P.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1995Failure mechanisms in AlGaAs/GaAs HEMTs
Christianson, K.A.; Moglestue, C.; Anderson, W.T.
Zeitschriftenaufsatz
1995Fast 2*2 Mach-Zehnder optical space switches using InGaAsP-InP multiquantum-well structures
Agrawal, N.; Weinert, C.M.; Ehrke, H.-J.; Mekonnen, G.G.; Franke, D.; Bornholdt, C.; Langenhorst, R.
Zeitschriftenaufsatz
1995In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth
Kunzel, H.; Bochnia, R.; Bottcher, J.; Harde, P.; Hase, A.; Griebenow, U.
Konferenzbeitrag, Zeitschriftenaufsatz
1995Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing
Kunzel, H.; Bottcher, J.; Hase, A.; Hofsass, V.; Kaden, C.; Schweizer, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1995Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Strahle, S.; Kohn, E.
Konferenzbeitrag, Zeitschriftenaufsatz
1995A Raman spectroscopic study of the Si, Be, and C incorporation in InxGa1-xAs relaxed layers
Alvarez, A.-L.; Calle, F.; Sacedon, A.; Calleja, E.; Munoz, E.; Wagner, J.; Maier, M.; Mazuelas, A.; Ploog, K.H.
Zeitschriftenaufsatz
1995Silicon incorporation in GaAs. From delta-doping to monolayer insertion
Wagner, J.; Newman, R.C.; Roberts, C.
Zeitschriftenaufsatz
1995Submicron InGaAs/InP MSM photodetectors for operation at 1.55 mu m
Umbach, A.; Droge, E.; Engel, H.; Bottcher, E.H.; Unterborsch, G.; Steingrüber, R.; Bimberg, D.
Konferenzbeitrag
1995Tapered InGaAs/GaAs MWQ lasers with carbon modulation-doping and reduced filamentation
Ralston, J.D.; Laughton, F.R.; Chazan, P.; Larkins, E.C.; Maier, M.; Abd Rahman, M.K.; White, I.H.
Zeitschriftenaufsatz
1995Uncladded thickness tapers integrated with InGaAsP/InP rib waveguides for efficient fibre-chip butt coupling
Morl, L.; Weinert, C.M.; Reier, F.; Stoll, L.; Nolting, H.-P.
Konferenzbeitrag
199412 GHz to 64 GHz continuous frequency tuning in selfpulsating 1.55 mu m quantum well DFB lasers
Feiste, U.; Möhrle, M.; Sartorius, B.; Hörer, J.; Löffler, R.
Konferenzbeitrag
19942*2 optical space switches using InGaAsP/InP MQW structures for 10-GHz applications
Agrawal, N.; Franke, D.; Weinert, C.M.; Bornholdt, C.
Konferenzbeitrag
1994An 800 MSps Track and hold using a 0.3 µm AlGaAs-HEMT-technology
Rohmer, G.; Seitzer, D.; Nowotny, U.; Raynor, B.; Schneider, J.; Sauerer, J.
Konferenzbeitrag
1994Characterization and Improvement of GaAs HEMT Analog Switches for Sampled-Data Applications
Feng, S.; Seitz, D.
Zeitschriftenaufsatz
1994Development of advanced GaInAs/AlInAs delta-doped SQW-HEMT structures
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Hase, A.
Konferenzbeitrag
1994Doping characteristics of undoped and Zn-doped In(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy
Reier, F.W.; Jahn, E.; Agrawal, N.; Harde, P.; Grote, N.
Zeitschriftenaufsatz
1994GaAs for ADCs. System needs and device requirements
Sauerer, J.; Oehler, F.; Rohmer, G.; Schlag, U.
Konferenzbeitrag
1994Implementation of GaAs E/D HEMT analog components for oversampling analog/digital conversion
Feng, S.; Sauerer, J.; Seitzer, D.
Konferenzbeitrag
1994Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Heedt, C.
Zeitschriftenaufsatz
1994In situ native oxide removal from AlGaInAs surfaces by hydrogen radical treatment for molecular beam epitaxy regrowth
Hase, A.; Gibis, A.R.; Kunzel, H.; Griebenow, U.
Zeitschriftenaufsatz
1994Integration of a tunable 4-section DBR laser within polarization diversity heterodyne receiver PICs
Kaiser, R.; Fidorra, F.; Trommer, D.; Malchow, S.; Albrecht, P.; Franke, D.; Heidrich, H.; Passenberg, W.; Schroeter-Janssen, H.; Stenzel, R.; Rehbein, W.
Konferenzbeitrag
1994Integration of tunable DBR-lasers with waveguides for heterodyne receiver OEIC applications using selective area MOVPE
Kaiser, R.; Fidorra, F.; Heidrich, H.; Albrecht, P.; Rehbein, W.; Malchow, S.; Schroeter-Janssen, H.; Franke, D.; Sztefka, G.
Konferenzbeitrag
1994Novel high gate barrier AlInAs/GaInAs/InP HEMT structure: Concept verification and key technologies
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Schramm, C.; Kunzel, H.
Konferenzbeitrag
1994Ohmic contacts to buried n-GaInAs layers for GaInAs/AlInAs-HEMTs
Umbach, A.; Schramm, C.; Bottcher, J.; Unterborsch, G.
Konferenzbeitrag
1994Self-consistent calculation of quantum well electron transfer structures for ultrafast optical switches
Weinert, C.M.; Agrawal, N.
Konferenzbeitrag
1994Self-consistent finite difference method for simulation and optimization of quantum well electron transfer structures
Weinert, C.M.; Agrawal, N.
Zeitschriftenaufsatz
1994Thermally induced failure in GaAs transistors exposed to alpha particle irradiation
Moglestue, C.; Buot, F.; Anderson, W.T.
Konferenzbeitrag
1994Ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures
Agrawal, N.; Wegener, M.
Konferenzbeitrag
1994Ultrafast graded-gap electron transfer optical modulator structure
Agrawal, N.; Wegener, M.
Zeitschriftenaufsatz
1993A 3.6 Gigasample/s 5 bit analog to digital converter using 0.3 mu m AlGaAs-HEMT technology
Oehler, F.; Sauerer, J.; Hagelauer, R.; Seitzer, D.; Nowotny, U.; Raynor, B.; Schneider, J.
Konferenzbeitrag
1993Clock recovery based on a new type of selfpulsation in a 1.5 mu m two-section InGaAsP-InP DFB laser
As, D.J.; Eggemann, R.; Feiste, U.; Möhrle, M.; Patzak, E.; Weich, K.
Zeitschriftenaufsatz
1993A controllable mechanism of forming extremely low-resistance nonalloyed ohmic contacts to group III-V compound semiconductors
Stareev, G.; Kunzel, H.; Dortmann, G.
Zeitschriftenaufsatz
1993Differentielles 1 GSps Abtasthalteglied in GaAs-SAGFET-Technologie
Rohmer, G.; Sauerer, J.; Seitzer, D.; Grave, T.; Kellner, W.
Konferenzbeitrag
1993Electroabsorption and saturation behavior of InGaAsP/InP/InAlAs multiple superlattice electron transfer optical modulator structures
Agrawal, N.; Reier, F.W.; Bornholdt, C.; Weinert, C.M.; Li, K.C.; Harde, P.; Langenhorst, R.; Grosskopf, G.; Berger, L.; Wegener, M.
Zeitschriftenaufsatz
1993Formation of extremely low resistance Ti/Pt/Au ohmic contacts to p-GaAs
Stareev, G.
Zeitschriftenaufsatz
1993Galliumarsenid 5 Bit Parallel-AD-Umsetzer mit integriertem Track & Hold für 1 GHz Abtastrate
Oehler, F.; Rohmer, G.; Hagelauer, R.; Sauerer, J.; Seitzer, D.
Konferenzbeitrag
1993InP based InGaAs-JFET with delta-doped channel
Mekonnen, G.G.; Passenberg, W.; Schramm, C.; Trommer, D.; Unterborsch, G.
Konferenzbeitrag
1993Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1993Low-temperature MBE of AlGaInAs lattice-matched to InP
Künzel, H.; Böttcher, J.; Gibis, R.; Hoenow, H.; Heedt, C.
Konferenzbeitrag, Zeitschriftenaufsatz
1993MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures
Kunzel, H.; Bottcher, J.; Hase, A.; Shramm, C.
Konferenzbeitrag, Zeitschriftenaufsatz
1993Monolithic integrated wavelength duplexer-receiver on InP
Bornholdt, C.; Trommer, D.; Unterborsch, G.; Bach, H.-G.; Venghaus, H.; Weinert, C.M.
Zeitschriftenaufsatz
1993Monte-Carlo-Simulationen genauer Analogschaltungen in GaAs-HEMT-Technologie
Feng, S.; Sauerer, J.; Hagelauer, R.; Seitzer, D.
Konferenzbeitrag
1993On the potential of delta-doping for AlInAs/GaInAs HEMTs grown by MBE
Passenberg, W.; Bach, H.-G.; Bottcher, J.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1993Polarization independent Mach-Zehnder Interferometer on III-V-semiconductors
Venghaus, H.; Weinert, C.M.
Konferenzbeitrag
1993Quantitative analysis of Be diffusion in delta-doped AlInAs and GaInAs during MBE growth
Passenberg, W.; Harde, P.
Konferenzbeitrag
1993Tunneling behavior of extremely low resistance nonalloyed Ti/Pt/Au contacts to n(p)-InGaAs and n-InAs/InGaAs
Stareev, G.; Kunzel, H.
Zeitschriftenaufsatz
1993Untersuchungen an GaAs-HEMT-Analogkomponenten für überabtastende Analog/Digital-Umsetzer mit hoher Geschwindigkeit
Feng, S.
Dissertation
1993Vectorial simulation of passive TE/TM mode converter devices on InP
Weinert, C.M.; Heidrich, H.
Zeitschriftenaufsatz
1992Charakterisierung und Modellierung des Übergangsverhaltens von Analogschaltern mit GaAs-E/D-MESFET
Feng, S.; Sauerer, J.; Hagelauer, R.; Seitzer, D.
Konferenzbeitrag
1992Coherent receiver front-end module including a polarization diversity waveguide OIC and a high-speed InGaAs twin-dual p-i-n photodiode OEIC both based on InP
Hamacher, M.; Heidrich, H.; Kruger, U.; Stenzel, R.; Bauer, J.G.; Albrecht, H.
Zeitschriftenaufsatz
1992Electro-optic modulation by electron transfer in multiple InGaAsP/InP barrier, reservoir, and quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.
Zeitschriftenaufsatz
1992Entwurf von GaAs-MESFET-Analogschaltern für Abtastschaltungen
Feng, S.; Sauerer, J.; Hagelauer, R.; Seitzer, D.
Konferenzbeitrag
1992Fundamental characteristics of InGaAs/InGaAsP-MQW-SCH-lasers emitting in 1.3 mu m wavelength range
Möhrle, M.; Rosenzweig, M.; Düser, H.; Grützmacher, D.
Zeitschriftenaufsatz
1992Gigahertz self-pulsation in 1.5 mu m wavelength multisection DFB lasers
Möhrle, M.; Feister, U.; Hörer, J.; Molt, R.; Sartorius, B.
Zeitschriftenaufsatz
1992A Gigasample/s 5 bit ADC with on-chip track & hold based on an industrial 1 mu m GaAs MESFET E/D process
Hagelauer, R.; Oehler, F.; Rohmer, G.; Sauerer, J.; Seitzer, D.
Konferenzbeitrag
1992High resistivity, low loss InGaAlAs/InP optical waveguides grown by low-temperature MBE
Kunzel, H.; Grote, N.; Albrecht, P.; Bottcher, J.; Bornholdt, C.
Konferenzbeitrag
1992Input voltage sensitivity of GaAs/GaAlAs HEMT latched comparator
Feng, S.; Seitzer, D.
Zeitschriftenaufsatz
1992Integrated wavelength demultiplexer-receiver on InP
Bornholdt, C.; Trommer, D.; Unterborsch, G.; Bach, H.G.; Kappe, F.; Passenberg, W.; Rehbein, W.; Reier, F.; Schramm, C.; Stenzel, R.; Umbach, A.; Venghaus, H.; Weinert, C.M.
Zeitschriftenaufsatz
1992Investigations and measurements of the dynamic performance of high speed ADCs
Hagelauer, R.; Oehler, F.; Rohmer, G.; Sauerer, J.; Seitzer, D.; Schmitt, R.; Winkler, D.
Konferenzbeitrag
1992Investigations and measurements of the dynamic performance of high speed ADCs
Hagelauer, R.; Oehler, F.; Rohmer, G.; Sauerer, J.; Seitzer, D.; Schmitt, R.; Winkler, D.
Konferenzbeitrag
1992Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy
Kunzel, H.; Bottcher, J.; Gibis, R.; Urmann, G.
Zeitschriftenaufsatz
1992Meander-type wavelength demultiplexer with weighted coupling
Venghaus, H.; Bornholdt, C.; Kappe, F.; Nolting, H.-P.; Weinert, C.M.
Zeitschriftenaufsatz
1992Mismatch of current sources and accuracy of D/A converters in 0.5 mu m GaAs/GaAlAs HEMT technology
Feng, S.; Sauerer, J.; Seitzer, D.
Konferenzbeitrag
1992Modellierung des dynamischen Verhaltens von Kurzkanal MOS-FETs
Budde, W.
Konferenzbeitrag
1992MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices
Agrawal, N.; Franke, D.; Grote, N.; Reier, F.W.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1992Passive mode converter with a periodically tilted InP/GaInAsP rib waveguide
Heidrich, H.; Albrecht, P.; Hamacher, M.; Nolting, H.-P.; Schroeter-Janssen, H.; Weinert, C.M.
Zeitschriftenaufsatz
1992Pseudomorphic GaxIn1-xAs on InP for HEMT structures grown by MBE
Kunzel, H.; Bach, H.G.; Bottcher, J.; Dickmann, J.; Dambkes, H.; Nachtwei, G.; Heide, S.
Konferenzbeitrag, Zeitschriftenaufsatz
1992System architecture and key components for an 8 bit/1 GHz GaAs MESFET ADC
Sauerer, J.; Hagelauer, R.; Oehler, F.; Rohmer, G.; Schlag, U.; Seitzer, D.; Grave, T.; Kellner, W.
Konferenzbeitrag
1991A 4 Gs/s comparator fabricated in an AlGaAs/GaAs heterojunction bipolar process
Cepl, F.; Baureis, P.; Seitzer, D.; Zwicknagel, P.
Konferenzbeitrag
1991Application of localized Zn diffusion across heterointerfaces for the realization of a compact high-speed bipolar driver circuit on InGaAsP/InP
Weber, R.; Paraskevopoulos, A.; Schroeter-Janssen, H.; Bach, H.G.
Zeitschriftenaufsatz
1991Comparison of five methods in determination of parasitic resistances in ion implanted GaAs FETs
Baureis, P.; Zimmer, T.
Konferenzbeitrag
1991The consequences of dislocations and thermal degradation on the quality of InGaAsP/InP epitaxial layers
Sartorius, B.; Reier, F.; Wolfram, P.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration
Kunzel, H.; Kaiser, R.; Passenberg, W.; Trommer, D.; Unterborsch, G.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Electro-optic modulation by electron transfer in MOVPE grown InGaAsP/InP multiple quantum well structures
Agrawal, N.; Hoffmann, D.; Franke, D.; Li, K.C.; Clemens, U.; Witt, A.; Wegener, M.
Konferenzbeitrag
1991A Gigasample/s 5 bit ADC with on-chip track & hold based on an industrial 1 mu m GaAs MESFET E/D process
Hagelauer, R.; Oehler, F.; Rohmer, G.; Sauerer, J.; Seitzer, D.
Konferenzbeitrag
1991An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs
Su, L.M.; Kunzel, H.; Bach, H.G.; Schlaak, W.; Grote, N.
Konferenzbeitrag
1991Laser properties of 1.35 mu m InGaAs/InGaAsP-separate-confinement-multi-quantum-well-structures
Möhrle, M.; Grützmacher, D.; Rosenzweig, M.; Düser, H.
Konferenzbeitrag
1991Lasing characteristics of InGaAs/InGaAsP MQW structures grown by low-pressure MOVPE
Rosenzweig, M.; Ebert, W.; Franke, D.; Grote, N.; Sartorius, B.; Wolfram, P.
Konferenzbeitrag, Zeitschriftenaufsatz
1991LP-MOVPE growth and characterization of wide-gap InGaAsP/InP layers (lambda g < 1.2 mu m) for optical waveguide applications
Reier, F.W.; Harde, P.; Kaiser, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1991MBE growth and electrical behavior of single and double Si delta-doped InGaAs-layers
Passenberg, W.; Bach, H.G.; Bottcher, J.
Konferenzbeitrag
1991MBE overgrowth of implanted regions in InP:Fe substrates
Kunzel, H.; Gibis, R.; Schlaak, W.; Su, L.M.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Molecular beam epitaxy grown Al(Ga)InAs: Schottky contacts and deep levels
Schramm, C.; Bach, H.G.; Kunzel, H.; Praseuth, J.P.
Zeitschriftenaufsatz
1991Non-linear optical gain of InGaAs/InGaAsP-quantum wells
Rosenzweig, M.; Mohrle, M.; Duser, H.; Tischel, M.; Heltz, R.; Hoffmann, A.
Konferenzbeitrag
1991On the current transport across isotype heterojunctions investigated on InP-based BRS-lasers
Bach, H.G.; Fidorra, F.
Konferenzbeitrag
1991Optical thickness mapping of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.; Wolfram, P.; Franke, D.
Zeitschriftenaufsatz
1991Optimization and calibration of two-wavelength transmission for absolute thickness measurements of InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.
Konferenzbeitrag
1991Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE
Kunzel, H.; Passenberg, W.; Bottcher, J.; Heedt, C.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Polarisation diversity waveguide network integrated on InP for a coherent optical receiver front-end
Heidrich, H.; Hamacher, M.; Albrecht, P.; Engel, H.; Hoffmann, D.; Imhof, D.; Nolting, H.-P.; Reier, F.; Weinert, C.M.
Konferenzbeitrag
1991A reliable fabrication technique for very low resistance ohmic contacts to p-InGaAs using low energy Ar+ ion beam sputtering
Stareev, G.; Umbach, A.; Fidorra, F.; Roehle, H.
Konferenzbeitrag
1991Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure
Paraskevopoulos, A.; Weber, R.; Harde, P.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Theoretical investigation of a meander coupler as fast tunable, narrowband multiplexer/demultiplexer for optical ATM-system application
Nolting, H.-P.
Konferenzbeitrag
1991Theoretical investigations of optical waveguide tapers on InGaAsP/InP
Nolting, H.P.; Weinert, C.M.
Zeitschriftenaufsatz
1991Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers
Rosenzweig, M.; Möhrle, M.; Düser, H.; Venghaus, H.
Zeitschriftenaufsatz
1991Two-wavelength transmission: A rapid and precise method for measuring the light absorption in semiconductors
Sartorius, B.; Brandstattner, M.; Venghaus, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Untersuchungen zum dynamischen Verhalten schneller Analog-Digital-Umsetzer aus Gallium-Arsenid
Hagelauer, R.
Dissertation
1990Characteristics of 1.5 µm InGaAs/InGaAsP MQW lasers
Duser, H.; Fidorra, F.; Franke, D.; Mohrle, M.; Rosenzweig, M.; Wolfram, P.; Grutzmacher, D.
Konferenzbeitrag
1990Characterization of conducting GaAs multilayers by infrared spectroscopy at oblique incidence
Grosse, P.; Harbecke, B.; Heinz, B.; Maier, M.; Jantz, W.
Zeitschriftenaufsatz
1990Control of a reactive ion etching process for InP and related materials by in-situ ellipsometry in the near infrared
Muller, R.
Konferenzbeitrag
1990The development of a polarization-diversity heterodyne receiver-waveguide switch on InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.P.; Schlak, M.; Weinert, C.M.
Konferenzbeitrag
1990Dry chemical etching processes for the production of InP-based components
Niggebrugge, U.; Muller, R.
Konferenzbeitrag
1990High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors
Paraskevopoulos, A.; Bach, H.G.; Schroeter-Janssen, H.; Mekonnen, G.; Hensel, H.J.; Grote, N.
Konferenzbeitrag
1990Hydrogen passivation of Zn acceptors in InGaAs during reactive ion etching
Moehrie, M.
Zeitschriftenaufsatz
1990In situ etching depth monitoring for reactive ion etching of InGaAs(P)/InP heterostructures by ellipsometry
Muller, R.
Zeitschriftenaufsatz
1990Incorporation behaviour of manganese in MBE grown Ga0.47In0.53As
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Zeitschriftenaufsatz
1990Meander coupler, a novel wavelength division multiplexer/demultiplexer
Bornholdt, C.; Kappe, F.; Muller, R.; Nolting, H.-P.; Reier, F.; Stenzel, R.; Venghaus, H.; Weinert, C.M.
Zeitschriftenaufsatz
1990Meander coupler: A novel structure for WDM-applications
Kappe, F.; Bornholdt, C.; Nolting, H.-P.; Reier, F.; Stenzel, R.; Venghaus, H.; Weinert, C.M.
Konferenzbeitrag
1990Nondestructive thickness mapping of epitaxial InGaAsP/InP layers
Sartorius, B.; Brandstattner, M.
Konferenzbeitrag
1990Optimization of extremely highly p-doped In0.53Ga0.47As:Be contact layers grown by MBE
Passenberg, W.; Harde, P.; Kunzel, H.; Trommer, D.
Konferenzbeitrag
1990Properties of two-section traveling wave amplifiers
Ludwig, R.; Moerhrle, M.; Rosenzweig, M.; Schnabel, R.; Schunk, N.; Weber, H.G.
Konferenzbeitrag
1990Secondary ion mass spectroscopic investigation of GaInAsP/InP laser structures made by metalorganic vapor phase epitaxy regrowth
Harde, P.; Fidorra, F.; Venghaus, H.
Zeitschriftenaufsatz
1990Self-consistent Monte Carlo particle modelling of small semiconductor elements.
Moglestue, C.
Zeitschriftenaufsatz
1990Superior microwave performance of InGaAs JFETs grown by MBE
Trommer, D.; Umbach, A.; Passenburg, W.; Mekonnen, G.; Unterborsch, G.
Zeitschriftenaufsatz
1990TE/TM mode splitters on InGaAsP/InP
Albrecht, P.; Hamacher, M.; Heidrich, H.; Hoffmann, D.; Nolting, H.; Weinert, C.M.
Zeitschriftenaufsatz
1990WDM components on the basis of InGaAsP/InP directional couplers
Bornholdt, C.; Kappe, F.; Nolting, H.P.; Stenzel, R.; Venghaus, H.; Weinert, C.M.
Konferenzbeitrag
1989Beryllium and manganese diffusion in Ga0.47In0.53As during MBE-growth
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Konferenzbeitrag
1989Butt coupled photodiodes integrated with Y-branched optical waveguides on InP
Döldissen, W.; Fiedler, F.; Kaiser, R.; Mörl, L.
Zeitschriftenaufsatz
1989Capacitance-voltage investigations of rechargeable traps in isotype laser heterojunctions
Bach, H.-G.; Beister, G.
Konferenzbeitrag
1989Endpoint detection for CH4/H2 reactive ion etching of InGaAsP heterostructures by mass spectrometry
Schmid, H.; Fidorra, F.; Grutzmacher, D.
Konferenzbeitrag
1989Implanted-collector InGaAsP/InP heterojunction bipolar transistor
Su, L.M.; Grote, N.; Schumacher, P.; Franke, D.
Konferenzbeitrag
1989InP based integrated laser driver circuit
Paraskevopoulos, A.; Bach, H.G.; Mekonnen, G.; Schroeter-Janssen, H.; Fiedler, F.; Grote, N.
Konferenzbeitrag
1989Orientation-dependent metalorganic vapor phase epitaxy regrowth on GaInAsP/InP laser structures
Fidorra, F.; Harde, P.; Venghaus, H.; Grutzmacher, D.
Zeitschriftenaufsatz
1988Devices and technologies for monolithically integrated InGaAsP/InP transmitter OEICs
Bach, H.G.; Fiedler, F.; Grote, N.; Bouadma, N.B.; Rose, B.; Devoldere, P.; Tegude, F.J.; Speier, P.; Wunstel, K.
Konferenzbeitrag
1988Waveguide-mirror components InGaAsP/InP
Albrecht, P.; Döldissen, W.; Niggebrügge, U.; Nolting, H.-P.; Schmid, H.
Konferenzbeitrag
1987Current-injection analysis of invertible InGaAsP/InP double-heterostructure bipolar transistors
Bach, H.G.; Grote, N.; Fiedler, F.
Konferenzbeitrag
1987Dielectrics for passivation of planar InP/InGaAs diodes
Unterborsch, G.; Bach, H.G.; Schmitt, F.; Schmidt, R.; Schlaak, W.
Konferenzbeitrag, Zeitschriftenaufsatz
1987Luminescence microscopy for quality control of material and processing
Satorius, B.; Franke, D.; Schlak, M.
Konferenzbeitrag, Zeitschriftenaufsatz
1987Self-aligned low-loss totally reflecting waveguide mirrors in InGaAsP/InP
Niggebrugge, U.; Albrecht, P.; Doldissen, W.; Nolting, H.-P.; Schmid, H.
Konferenzbeitrag
1987Self-aligned waveguide mirrors for optical integration on InGaAsP/InP
Albrecht, P.; Doldissen, W.; Niggerbrugge, U.; Nolting, H.P.; Schmid, H.
Konferenzbeitrag
1987Simultaneous fabrication of very low resistance ohmic contacts to n-InP and p-InGaAs
Kaumanns, R.; Grote, N.; Bach, H.-G.; Fidorra, F.
Konferenzbeitrag
1987Waveguide-integrated PIN photodiode on InP
Bornholdt, C.; Döldissen, W.; Fiedler, F.; Kaiser, R.; Kowalsky, W.
Zeitschriftenaufsatz
1986Characteristics of double-heterojunction InGaAsP/InP bipolar transistors
Grote, N.; Su, L.M.; Bach, H.-G.
Konferenzbeitrag
1986Electro-optic modulators in GaInAsP/InP
Krauser, J.; Albrecht, P.; Bornholdt, C.; Doldissen, W.; Niggebrugge, U.; Nolting, H.-P.; Schlak, M.
Konferenzbeitrag
1986Homogeneous linewidth and linewidth enhancement factor for a GaAs semiconductor laser
Sugimura, A.; Patzak, E.; Meissner, P.
Zeitschriftenaufsatz
1985Experimental study of stability properties of injection-locked InGaAsP/InP laser diodes
Grosskopf, G.; Kuller, L.
Zeitschriftenaufsatz
1985High-efficiency phase modulators in InGaAsP/InP
Bornholdt, C.; Doldissen, W.; Franke, D.; Krauser, J.; Niggebrugge, U.; Nolting, H.-P.; Schmitt, F.
Konferenzbeitrag
1985An InGaAsP/InP double-heterojunction bipolar transistor for monolithic integration with a 1.5- mu m laser diode
Su, L.M.; Grote, N.; Kaumanns, R.; Katzschner, W.; Bach, H.G.
Zeitschriftenaufsatz
1985A novel npn InGaAs bipolar transistor with a wide gap cadmium oxide (CdO) emitter
Su, L.M.; Grote, N.; Bach, H.G.; Doldissen, W.; Rosenzweig, M.
Konferenzbeitrag
1985NpnN double-heterojunction bipolar transistor on InGaAsP/InP
Su, L.M.; Grote, N.; Kaumanns, R.; Schroeter, H.
Zeitschriftenaufsatz
1985pnp-type InP/InGaAsP/InP bipolar transistor
Su, L.M.; Schroeter-Janssen, H.; Li, K.C.; Grote, N.
Zeitschriftenaufsatz
1984A new open diffusion technique using evaporated Zn3P2 and its application to a lateral p-n-p transistor
Schmitt, F.; Su, L.M.; Franke, D.; Kaumanns, R.
Zeitschriftenaufsatz
1984A numerical investigation of lateral holeburning effects on the spectral behaviour of stripe geometry lasers
Meissner, P.; Patzak, E.; Yevick, D.
Zeitschriftenaufsatz
1983Electro-optical light modulation in InGaAsP/InP double heterostructure diodes
Bach, H.G.; Krauser, J.; Nolting, H.P.; Logan, R.A.; Reinhart, F.K.
Zeitschriftenaufsatz
1983Light guiding and electrooptical modulation in InGaAsP/InP double heterostructures
Albrecht, P.; Bach, H.G.; Bornholdt, C.; Doldissen, W.; Franke, D.; Grote, N.; Krauser, J.; Niggebrugge, U.; Nolting, H.P.; Schlak, M.; Tiedke, I.; Logan, R.A.; Reinhart, F.K.
Konferenzbeitrag
1983Passive optical GaInAsP/InP waveguides
Bornholdt, C.; Doldissen, W.; Franke, D.; Grote, N.; Krauser, J.; Niggebrugge, U.; Nolting, H.P.; Schlak, M.; Tiedke, I.
Zeitschriftenaufsatz
1982Spectral behaviour of InGaAsP/InP 1.3 mu m lasers and implications on the transmission performance of broadband Gbit/s signals
Wenke, G.; Enning, B.
Zeitschriftenaufsatz