Fraunhofer-Gesellschaft

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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2016Single-input GaN gate driver based on depletion-mode logic integrated with a 600 V GaN-on-Si power transistor
Mönch, S.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015Integrated reverse-diodes for GaN-HEMT structures
Reiner, R.; Waltereit, P.; Weiss, B.; Wespel, M.; Quay, R.; Schlechtweg, M.; Mikulla, M.; Ambacher, O.
Konferenzbeitrag
2015Monolithic integrated quasi-normally-off gate driver and 600 V GaN-on-Si HEMT
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015Quasi-normally-off GaN gate driver for high slew-rate d-mode GaN-on-Si HEMTs
Mönch, S.; Costa, M.; Barner, A.; Kallfass, I.; Reiner, R.; Weiss, B.; Waltereit, P.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2007Distributed amplifier MMIC with 21 dB gain and 90 GHz bandwidth using InP-based DHBTs
Schneider, K.; Driad, R.; Makon, R.E.; Weimann, G.
Konferenzbeitrag
2005Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation
Schneider, K.; Driad, R.; Makon, R.E.; Massler, H.; Ludwig, M.; Quay, R.; Schlechtweg, M.; Weimann, G.
Zeitschriftenaufsatz
1999Monolithic integration of III-V microcavity LEDs on silicon drivers using conformal epitaxy
Gerard, B.; Marcadet, X.; Etienne, P.; Pribat, D.; Friedrich, D.; Eichholz, J.; Bernt, H.; Carlin, J.-F.; Ilegems, M.
Konferenzbeitrag
199840 Gb/s high-power modulator driver IC for lightwave communication systems
Lao, Z.; Thiede, A.; Nowotny, U.; Lienhart, H.; Hurm, V.; Schlechtweg, M.; Hornung, J.; Bronner, W.; Köhler, K.; Hülsmann, A.; Raynor, B.; Jakobus, T.
Zeitschriftenaufsatz
1992A 50 V smart power process with dielectric isolation by SIMOX
Vogt, H.; Weyers, J.
Konferenzbeitrag
1991Application of localized Zn diffusion across heterointerfaces for the realization of a compact high-speed bipolar driver circuit on InGaAsP/InP
Weber, R.; Paraskevopoulos, A.; Schroeter-Janssen, H.; Bach, H.G.
Zeitschriftenaufsatz
1991An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs
Su, L.M.; Kunzel, H.; Bach, H.G.; Schlaak, W.; Grote, N.
Konferenzbeitrag
1990High-frequency properties and application of invertible GaInAsP/InP double-heterostructure bipolar transistors
Paraskevopoulos, A.; Bach, H.G.; Schroeter-Janssen, H.; Mekonnen, G.; Hensel, H.J.; Grote, N.
Konferenzbeitrag
1989InP based integrated laser driver circuit
Paraskevopoulos, A.; Bach, H.G.; Mekonnen, G.; Schroeter-Janssen, H.; Fiedler, F.; Grote, N.
Konferenzbeitrag
1987Current-injection analysis of invertible InGaAsP/InP double-heterostructure bipolar transistors
Bach, H.G.; Grote, N.; Fiedler, F.
Konferenzbeitrag