Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Process variability - technological challenge and design issue for nanoscale devices
Lorenz, Jürgen; Bär, Eberhard; Barraud, Sylvain; Brown, Andrew R.; Evanschitzky, Peter; Klüpfel, Fabian; Wang, Liping
Zeitschriftenaufsatz
2018Platinum in Silicon after Post-Implantation Annealing: From Experiments to Process and Device Simulations
Hauf, Moritz; Schmidt, Gerhard; Niedernostheide, Franz-Josef; Johnsson, Anna; Pichler, Peter
Konferenzbeitrag
2018Prediction of SRAM reliability under mechanical stress induced by harsh environments
Warmuth, Jens; Giering, Kay-Uwe; Lange, André; Clausner, André; Schlipf, Simon; Kurz, Gottfried; Otto, Michael; Paul, Jens; Jancke, Roland; Aal, Andreas; Gall, Martin; Zschech, Ehrenfried
Konferenzbeitrag
2018Process variability for devices at and beyond the 7 nm node
Lorenz, Jürgen; Asenov, Asen; Bär, Eberhard; Barraud, Sylvain; Millar, Campbell; Nedjalkov, Mihail
Konferenzbeitrag
2017The concept of skins for silicon solar cell modeling
Fell, Andreas; Schön, Jonas; Schubert, Martin C.; Glunz, Stefan W.
Zeitschriftenaufsatz
2016Performance of tri-gate AlGaN/GaN HEMTs
Alsharef, M.; Granzner, R.; Schwierz, F.; Ture, E.; Quay, R.; Ambacher, O.
Konferenzbeitrag
2015Input parameters for the simulation of silicon solar cells in 2014
Fell, A.; McIntosh, K.R.; Altermatt, P.P.; Janssen, G.J.M.; Stangl, R.; Ho-Baillie, A.; Steinkemper, H.; Greulich, J.; Müller, M.; Min, B.; Fong, K.C.; Hermle, M.; Romijn, I.G.; Abbott, M.D.
Zeitschriftenaufsatz
2014Simultaneous simulation of systematic and stochastic process variations
Lorenz, Jürgen; Bär, Eberhard; Burenkov, Alex; Evanschitzky, Peter; Asenov, Asen; Wang, Liping; Wang, Xingsheng; Brown, Andrew; Millar, Campbell; Reid, David
Konferenzbeitrag
2011Hierarchical simulation of process variations and their impact on circuits and systems: Methodology
Lorenz, J.; Bär, E.; Clees, T.; Jancke, R.; Salzig, C.P.J; Selberherr, S.
Zeitschriftenaufsatz
2011Hierarchical simulation of process variations and their impact on circuits and systems: Results
Lorenz, J.K.; Bär, E.; Clees, T.; Evanschitzky, P.; Jancke, R.; Kampen, C.; Paschen, U.; Salzig, C.P.J; Selberherr, S.
Zeitschriftenaufsatz
2010Impact of technological options for 22 nm SOI CMOS transistors on IC performance
Burenkov, A.; Kampen, C.; Bär, E.; Lorenz, J.
Konferenzbeitrag
2008An application-driven improvement of the drift-diffusion model for carrier transport in decanano-scaled CMOS devices
Kampen, C.; Burenkov, A.; Lorenz, J.; Ryssel, H.; Aubry-Fortuna, V.; Bournel, A.
Zeitschriftenaufsatz
2008Process models for advanced annealing schemes and their use in device simulation
Pichler, P.; Martinez-Limia, A.; Kampen, C.; Burenkov, A.; Schermer, J.; Paul, S.; Lerch, W.; Gelpey, J.; McCoy, S.; Kheyrandish, H.; Pakfar, A.; Tavernier, C.; Bolze, D.
Konferenzbeitrag
2008Systematical study of InAIN/GaN devices by numerical simulation
Vitanov, S.; Palankovski, V.; Pozzovivo, G.; Kuzmik, J.; Quay, R.
Konferenzbeitrag
2007Hydrodynamic modeling of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Konferenzbeitrag
2007Modeling of Electron Transport in GaN-based Materials and Devices
Vitanov, S.; Palankovski, V.; Quay, R.; Langer, E.
Konferenzbeitrag
2007Predictive simulation of AlGaN/GaN HEMTs
Vitanov, S.; Palankovski, V.; Murad, S.; Rödle, T.; Quay, R.; Selberherr, S.
Konferenzbeitrag
2006Accurate extraction of maximum current densities from the layout
Seidl, A.; Schnattinger, T.; Erdmann, A.; Hartmann, H.; Petrashenko, A.
Konferenzbeitrag, Zeitschriftenaufsatz
2006Field-plate optimization of AlGaN/GaN HEMTs
Palankovski, V.; Vitanov, S.; Quay, R.
Konferenzbeitrag
20043D simulation of process effects limiting FinFET performance and scalability
Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2002ESD circuit simulation for the prevention of ESD failures. Application to products in a 0.18 µm CMOS technology
Wolf, H.; Gieser, H.; Stadler, W.; Esmark, K.
Konferenzbeitrag
2001Compact modelling of process related effects on electrical behaviour of CMOS transistors
Burenkov, A.; Zhou, X.
Konferenzbeitrag
2000A global self-heating model for device simulation
Grasser, T.; Palankovski, V.; Quay, R.; Selberherr, S.
Konferenzbeitrag
2000Optimization of 0.18 µm CMOS Devices by Coupled Process and Device Simulation
Burenkov, A.; Tietzel, K.; Lorenz, J.
Zeitschriftenaufsatz
2000Simulation of Gallium-Arsenide based high electron mobility transistors
Quay, R.; Massler, H.; Kellner, W.; Grasser, T.; Palankovski, V.; Selberherr, S.
Konferenzbeitrag
2000Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters
Quay, R.; Palankovski, V.; Chertouk, M.; Leuther, A.; Selberherr, S.
Konferenzbeitrag
2000A temperature dependent model for the saturation velocity in semiconductor materials
Quay, R.; Moglestue, C.; Palankovski, V.; Selberherr, S.
Zeitschriftenaufsatz
1999S-parameter simulation of HBTs on Gallium-Arsenide
Palankovski, V.; Quay, R.; Selberherr, S.; Schultheis, R.
Konferenzbeitrag
1999Thermal simulations of III/V HEMTs
Quay, R.; Reuter, R.; Grasser, T.; Selberherr, S.
Konferenzbeitrag
1999Utilizing coupled process and device simulation for optimization of sub-quarter-micron CMOS technology
Wittl, J.; Burenkov, A.; Tietzel, K.; Müller, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag
1997Realization and evaluation of an ultra low-voltage/low-power 0.25 mu m (n+/p+) dual-workfunction CMOS technology
Schwalke, U.; Berthold, J.; Burenkov, A.; Eisele, M.; Krieg, R.; Narr, A.; Schumann, D.; Seibert, R.; Thanner, R.
Konferenzbeitrag
1991Adaptive multigrid methods for the simulation of semiconductor devices
Constapel, R.
Konferenzbeitrag
1991A multigrid approach for two-dimensional simulation of semiconductor devices
Constapel, R.
Konferenzbeitrag
1990MAGIC-ein zweidimensionaler Bauelemente-Simulator auf der Basis von Mehrgitter-Algorithmen
Constapel, R.
Konferenzbeitrag
1989A multigrid approach for device simulation using locallinearization
Berger, M.; Constapel, R.
Konferenzbeitrag