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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2006Conduction model of SnO2 thin films based on conductance and Hall effect measurements
Oprea, A.; Moretton, E.; Barsan, N.; Becker, W.J.; Wöllenstein, J.; Weimar, U.
Zeitschriftenaufsatz
2002Carrier density dependence of the lifetime of InGaAs/AlGaAs high power lasers
Rinner, F.; Rogg, J.; Wiedmann, N.; Konstanzer, H.; Dammann, M.; Mikulla, M.; Poprawe, R.; Weimann, G.
Konferenzbeitrag
2002Longitudinal carrier density measurement of high power broad area laser diodes
Rinner, F.; Rogg, J.; Friedmann, P.; Mikulla, M.; Weimann, G.; Poprawe, R.
Zeitschriftenaufsatz
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1996Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W.
Konferenzbeitrag
1995Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Strahle, S.; Kohn, E.
Konferenzbeitrag, Zeitschriftenaufsatz
1994Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Heedt, C.
Zeitschriftenaufsatz
1992Material properties of Ga0.47In0.53As grown on InP by low-temperature molecular beam epitaxy
Kunzel, H.; Bottcher, J.; Gibis, R.; Urmann, G.
Zeitschriftenaufsatz
1991Critical issues in the MBE growth of Ga0.47In0.53As for waveguide/PIN/JFET integration
Kunzel, H.; Kaiser, R.; Passenberg, W.; Trommer, D.; Unterborsch, G.
Konferenzbeitrag, Zeitschriftenaufsatz
1991Non-linear optical gain of InGaAs/InGaAsP-quantum wells
Rosenzweig, M.; Mohrle, M.; Duser, H.; Tischel, M.; Heltz, R.; Hoffmann, A.
Konferenzbeitrag
1991Threshold-current analysis of InGaAs-InGaAsP multiquantum well separate-confinement lasers
Rosenzweig, M.; Möhrle, M.; Düser, H.; Venghaus, H.
Zeitschriftenaufsatz
1990Optimization of extremely highly p-doped In0.53Ga0.47As:Be contact layers grown by MBE
Passenberg, W.; Harde, P.; Kunzel, H.; Trommer, D.
Konferenzbeitrag
1989Very high purity InP layers grown by adduct-MOVPE
Wolfram, P.; Reier, F.W.; Franke, D.; Schumann, H.
Zeitschriftenaufsatz
1986Experiments on optical amplifiers for two channel transmission
Grosskopf, G.; Kuller, L.; Ludwig, R.; Molt, R.; Weber, H.G.
Konferenzbeitrag
1986Homogeneous linewidth and linewidth enhancement factor for a GaAs semiconductor laser
Sugimura, A.; Patzak, E.; Meissner, P.
Zeitschriftenaufsatz
1985An analysis of the linewidth and spectral behaviour of DBR lasers
Patzak, E.; Meissner, P.; Yevick, D.
Zeitschriftenaufsatz
1984A self-consistent model of stripe geometry lasers based on the beam propagation method
Meissner, P.; Patzak, E.; Yevick, D.
Zeitschriftenaufsatz