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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2013Stability and annealing of alucones and alucone alloys
Ghazaryan, Lilit; Kley, Ernst-Bernhard; Tünnermann, Andreas; Szeghalmi, Adriana Viorica
Zeitschriftenaufsatz
2013Structural properties of as deposited and annealed ZrO2 influenced by atomic layer deposition, substrate, and doping
Weinreich, W.; Wilde, L.; Müller, J.; Sundqvist, J.; Erben, E.; Heitmann, J.; Lemberger, M.; Bauer, A.J.
Zeitschriftenaufsatz
2010Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors
Lim, T.; Aidam, Rolf; Kirste, Lutz; Waltereit, Patrick; Quay, Rüdiger; Müller, Stefan; Ambacher, O.
Zeitschriftenaufsatz
2007Intersubband relaxation dynamics in single and double quantum wells based on strained InGaAs/AIAs/AIAsSb
Grimm, C.V.-B.; Priegnitz, M.; Winnerl, S.; Schneider, H.; Helm, M.; Biermann, K.; Künzel, H.
Zeitschriftenaufsatz
2002Low-temperature-grown 1.55 mu m GaInAs/AlInAs quantum wells for optical switching: MBE growth and optical response
Kuenzel, H.; Biermann, K.; Boettcher, J.; Harde, P.; Kurtzweg, M.; Schneider, R.; Neumann, W.; Nickel, D.; Reimann, K.; Woerner, M.; Elsaesser, T.
Konferenzbeitrag
2001Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
Künzel, H.; Biermann, K.; Nickel, D.; Elsaesser, T.
Konferenzbeitrag, Zeitschriftenaufsatz
2000Critical issues on the assessment of laser induced damage thresholds of fluoride multilayer coatings at 193 nm
Thielsch, R.; Heber, J.; Kaiser, N.; Martin, S.; Welsch, E.
Konferenzbeitrag
2000MBE growth of single crystalline AlInAs/GaInAs MQWs at the low growth temperature limit
Biermann, K.; Kunzel, H.; Elsasser, T.
Konferenzbeitrag
1999Optical pyrometry for in situ control of MBE growth of (Al,Ga)As1-xSbx compounds on InP
Biermann, K.; Hase, A.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
199855 GHz dynamic frequency divider IC
Lao, Z.; Thiede, A.; Hornung, J.; Schlechtweg, M.; Lienhart, H.; Bronner, W.; Hülsmann, A.; Jakobus, T.; Seibel, J.; Sedler, M.; Kaufel, G.
Zeitschriftenaufsatz
1998A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure
Mörl, L.; Bornholdt, C.; Hoffmann, D.; Matzen, K.; Mekonnen, G.G.; Reier, F.W.
Konferenzbeitrag
1997Barrier composition dependence of the emission properties of AlGaInAs/GaInAs quantum wells grown by molecular beam epitaxy
Hase, A.; Chew-Walter, A.; Kuenzel, H.
Zeitschriftenaufsatz
1997MBE regrowth on AlGaInAs DFB gratings using in-situ hydrogen radical cleaning
Kuenzel, H.; Boettcher, J.; Hase, A.; Hensel, H.-J.; Janiak, K.; Urmann, G.; Paraskevopoulos, A.
Konferenzbeitrag, Zeitschriftenaufsatz
1997MOVPE growth of a polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier MQW waveguide structure
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Morl, L.; Weinert, C.M.
Konferenzbeitrag
1997Strain compensated GaInAs/AlInAs tunnelling barrier MQW structure for polarisation independent optical switching
Reier, F.W.; Bach, H.-G.; Bornholdt, C.; Hoffmann, D.; Mörl, L.; Weinert, C.M.
Konferenzbeitrag
199627 GHz bandwidth integrated photoreceiver comprising a waveguide fed photodiode and a GaInAs/AlInAs-HEMT based travelling wave amplifier
Umbach, A.; Passenberg, W.; Unterborsch, G.; Mekonnen, G.G.; Schlaak, W.; Schramm, C.; Ebert, W.; Wolfram, P.; Bach, H.-G.; Waasen, S. van; Bertenburg, R.M.; Janssen, G.; Reuter, R.; Auer, U.; Tegude, F.-J.
Konferenzbeitrag
1996Design and realisation of waveguide integrated AlInAs/GaInAs HEMTs regrown by MBE for high bit rate optoelectronic receivers on InP
Schramm, C.; Schlaak, W.; Mekonnen, G.G.; Passenberg, W.; Umbach, A.; Seeger, A.; Wolfram, P.; Bach, H.-G.
Zeitschriftenaufsatz
1996GaInAs/AlInAs-HEMTs grown on optical waveguide layers for photonic integrated circuits
Schlaak, W.; Passenberg, W.; Schramm, C.; Mekonnen, G.G.; Umbach, A.; Ebert, W.; Bach, H.-G.
Konferenzbeitrag
1996Hydrogen radical processing-in-situ semiconductor surface cleaning for epitaxial regrowth
Kunzel, H.; Hase, A.; Griebenow, U.
Konferenzbeitrag
1996Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W.
Konferenzbeitrag
1996Monolithic pin-HEMT 1.55 mu m photoreceiver on InP with 27 GHz bandwidth
Umbach, A.; Waasen, S. van; Auer, U.; Bach, H.-G.; Bertenburg, R.M.; Breuer, V.; Ebert, W.; Janssen, G.; Mekonnen, G.G.; Passenberg, W.; Schlaak, W.; Schramm, C.; Seeger, A.; Tegude, F.-J.; Unterborsch, G.
Zeitschriftenaufsatz
1996Ultrafast GaInAs/AlInAs/InP photoreceiver based on waveguide architecture
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Mekonnen, G.G.; Schlaak, W.; Schramm, C.; Ebert, W.; Wolfram, P.; Waasen, S. van; Bertenburg, R.M.; Janssen, G.; Reuter, R.; Auer, U.; Tegude, F.-J.
Konferenzbeitrag
1995Coexistence of the Franz-Keldysh and Wannier-Stark effect in semiconductor superlattices
Linder, N.; Schmidt, K.H.; Geisselbrecht, W.; Döhler, G.H.; Grahn, H.T.; Ploog, K.; Schneider, H.
Zeitschriftenaufsatz
1995External-field-induced electric dipole moment of biexcitons in a semiconductor
Leisching, P.; Ott, R.; Haring Bolivar, P.; Dekorsy, T.; Bakker, H.J.; Roskos, H.G.; Kurz, H.; Köhler, K.
Zeitschriftenaufsatz
1995Failure mechanisms in AlGaAs/GaAs HEMTs
Christianson, K.A.; Moglestue, C.; Anderson, W.T.
Zeitschriftenaufsatz
1995In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth
Kunzel, H.; Bochnia, R.; Bottcher, J.; Harde, P.; Hase, A.; Griebenow, U.
Konferenzbeitrag, Zeitschriftenaufsatz
1995Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing
Kunzel, H.; Bottcher, J.; Hase, A.; Hofsass, V.; Kaden, C.; Schweizer, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1995Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Strahle, S.; Kohn, E.
Konferenzbeitrag, Zeitschriftenaufsatz
1994Assessment of clustering induced internal strain in AlInAs on InP grown by molecular beam epitaxy
Hase, A.; Kunzel, H.; Zahn, D.R.T.; Richter, W.
Zeitschriftenaufsatz
1994Development of advanced GaInAs/AlInAs delta-doped SQW-HEMT structures
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Hase, A.
Konferenzbeitrag
1994Doping characteristics of undoped and Zn-doped In(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy
Reier, F.W.; Jahn, E.; Agrawal, N.; Harde, P.; Grote, N.
Zeitschriftenaufsatz
1994Improved inverted AlInGa/GaInAs two-dimensional electron gas structures for high quality pseudomorphic double heterojunction AlInAs/GaInAs high electron mobility transistor devices
Kunzel, H.; Bach, H.-G.; Bottcher, J.; Heedt, C.
Zeitschriftenaufsatz
1994In situ native oxide removal from AlGaInAs surfaces by hydrogen radical treatment for molecular beam epitaxy regrowth
Hase, A.; Gibis, A.R.; Kunzel, H.; Griebenow, U.
Zeitschriftenaufsatz
1994Novel high gate barrier AlInAs/GaInAs/InP HEMT structure: Concept verification and key technologies
Bach, H.-G.; Umbach, A.; Unterborsch, G.; Passenberg, W.; Schramm, C.; Kunzel, H.
Konferenzbeitrag
1994Ohmic contacts to buried n-GaInAs layers for GaInAs/AlInAs-HEMTs
Umbach, A.; Schramm, C.; Bottcher, J.; Unterborsch, G.
Konferenzbeitrag
1994Self-consistent finite difference method for simulation and optimization of quantum well electron transfer structures
Weinert, C.M.; Agrawal, N.
Zeitschriftenaufsatz
1994Ultrafast electron dynamics in InGaAlAs/InP graded-gap electron transfer optical modulator structures
Agrawal, N.; Wegener, M.
Konferenzbeitrag
1994Ultrafast graded-gap electron transfer optical modulator structure
Agrawal, N.; Wegener, M.
Zeitschriftenaufsatz
1993Electroabsorption and saturation behavior of InGaAsP/InP/InAlAs multiple superlattice electron transfer optical modulator structures
Agrawal, N.; Reier, F.W.; Bornholdt, C.; Weinert, C.M.; Li, K.C.; Harde, P.; Langenhorst, R.; Grosskopf, G.; Berger, L.; Wegener, M.
Zeitschriftenaufsatz
1993Highly abrupt modulation Zn doping in LP-MOVPE grown InAlAs as applied to quantum well electron transfer structures for optical switching
Reier, F.W.; Agrawal, N.; Harde, P.; Bochnia, R.
Konferenzbeitrag
1993Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures
Kunzel, H.; Bottcher, J.; Hase, A.; Heedt, C.; Hoenow, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1993Low-temperature MBE of AlGaInAs lattice-matched to InP
Künzel, H.; Böttcher, J.; Gibis, R.; Hoenow, H.; Heedt, C.
Konferenzbeitrag, Zeitschriftenaufsatz
1993MBE growth and properties of high quality Al(Ga)InAs/GaInAs MQW structures
Kunzel, H.; Bottcher, J.; Hase, A.; Shramm, C.
Konferenzbeitrag, Zeitschriftenaufsatz
1993On the potential of delta-doping for AlInAs/GaInAs HEMTs grown by MBE
Passenberg, W.; Bach, H.-G.; Bottcher, J.; Kunzel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1993Quantitative analysis of Be diffusion in delta-doped AlInAs and GaInAs during MBE growth
Passenberg, W.; Harde, P.
Konferenzbeitrag
1992High resistivity, low loss InGaAlAs/InP optical waveguides grown by low-temperature MBE
Kunzel, H.; Grote, N.; Albrecht, P.; Bottcher, J.; Bornholdt, C.
Konferenzbeitrag
1992Low-temperature MBE-grown In0.52Ga0.18Al0.30As/InP optical waveguides
Künzel, H.; Grote, N.; Albrecht, P.; Böttcher, J.; Bornholdt, C.
Zeitschriftenaufsatz
1992MOVPE growth and characterization of InGaAs/In(GaAs)P and InGaAsP/InP/InAlAs multi-quantum-well structures for electro-optic switching devices
Agrawal, N.; Franke, D.; Grote, N.; Reier, F.W.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1992Pseudomorphic GaxIn1-xAs on InP for HEMT structures grown by MBE
Kunzel, H.; Bach, H.G.; Bottcher, J.; Dickmann, J.; Dambkes, H.; Nachtwei, G.; Heide, S.
Konferenzbeitrag, Zeitschriftenaufsatz
1991An integrated laser driver circuit based on implanted collector InGaAs/InAlAs HBTs
Su, L.M.; Kunzel, H.; Bach, H.G.; Schlaak, W.; Grote, N.
Konferenzbeitrag
1991Molecular beam epitaxy grown Al(Ga)InAs: Schottky contacts and deep levels
Schramm, C.; Bach, H.G.; Kunzel, H.; Praseuth, J.P.
Zeitschriftenaufsatz
1991Optimization of the AlInAs growth temperature for AlInAs/GaInAs HEMTs grown by MBE
Kunzel, H.; Passenberg, W.; Bottcher, J.; Heedt, C.
Konferenzbeitrag, Zeitschriftenaufsatz
1989Capacitance-voltage investigations of rechargeable traps in isotype laser heterojunctions
Bach, H.-G.; Beister, G.
Konferenzbeitrag
1989Quality and applications of In(Ga)AlAs-layers
Schramm, C.; Kunzel, H.; Bornholdt, C.; Su, L.M.; Wehmann, H.H.
Konferenzbeitrag
1984A numerical investigation of lateral holeburning effects on the spectral behaviour of stripe geometry lasers
Meissner, P.; Patzak, E.; Yevick, D.
Zeitschriftenaufsatz