Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019Determination of Compensation Ratios of Al-Implanted 4H-SiC by TCAD Modelling of TLM Measurements
Kocher, Matthias; Yao, Boteng; Weisse, Julietta; Rommel, Mathias; Xu, Zong Wei; Erlbacher, Tobias; Bauer, Anton J.
Konferenzbeitrag
2019Influence of Interfacial Oxides at TCO/doped Si Thin film Contacts on the charge Carrier Transport of Passivating Contacts
Messmer, C.; Bivour, M.; Luderer, C.; Tutsch, L.; Schön, J.; Hermle, M.
Vortrag
2019Modeling the impact of the high-field region on the C-V characteristics in GaN HEMTs
Hodges, Jason; Albahrani, Sayed Ali; Schwantuschke, Dirk; Raay, Friedbert van; Brueckner, Peter; Khandelwal, Sourabh
Zeitschriftenaufsatz
2016Empirical cluster modeling revisited
Pichler, Peter
Konferenzbeitrag
2015ESD protection methodology on system level and concept on device level
Notermans, Guido; Holland, Steffen; Sohrmann, Christoph
Konferenzbeitrag
2013Self-heating of Nano-Scale SOI MOSFETs: TCAD and Molecular Dynamics Simulations
Burenkov, Alex; Belko, Viktor; Lorenz, Jürgen
Konferenzbeitrag
2011On the influence of RTA and MSA peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Pichler, P.; Lorenz, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Determination of across-wafer variations of transistor characteristics by coupling equipment simulation with technology computer-aided design (TCAD)
Kampen, C.; Burenkov, A.; Kunder, D.; Baer, E.; Lorenz, J.
Konferenzbeitrag
2010On the influence of flash peak temperature variations on Schottky contact resistances of 6-T SRAM cells
Kampen, C.; Burenkov, A.; Lorenz, J.
Konferenzbeitrag
2008Advanced annealing strategies for the 32 nm node
Kampen, C.; Martinez-Limia, A.; Pichler, P.; Burenkov, A.; Lorenz, J.; Ryssel, H.
Konferenzbeitrag