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2012 | Entwicklung einer lichtbogengestützten PECVD-Technologie für die Synthese siliziumbasierter Schichtsysteme unter Atmosphärendruck Rogler, Daniela : Beyer, Eckhard (Betreuer); Neidhardt, Andreas (Gutachter); Kaskel, Stefan (Gutachter) | Dissertation |
2005 | High-density ECR-plasma deposited silicon nitride films for applications in III/V-based compound semiconductor devices Sah, R.E.; Mikulla, M.; Baumann, H.; Benkhelifa, F.; Quay, R.; Weimann, G. | Konferenzbeitrag |
2005 | Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G. | Konferenzbeitrag |
2002 | Advanced diffusion system for low contamination in-line rapid thermal processing of silicon solar cells Biro, D.; Preu, R.; Schultz, O.; Peters, S.; Huljic, D.M.; Zickermann, D.; Schindler, R.; Ludemann, R.; Willeke, G. | Zeitschriftenaufsatz |
2002 | Strengthening of ceramics by shot peening Pfeiffer, W.; Frey, T. | Konferenzbeitrag, Zeitschriftenaufsatz |
2000 | Analysis of HBT behavior after strong electrothermal stress Palankovski, V.; Selberherr, S.; Quay, R.; Schultheis, R. | Konferenzbeitrag |
1997 | ECR-plasma deposited oxygen-free SiN(x) films for low- and high-reflectivity coatings for GaAs based devices Sah, R.E.; Weimar, U.; Baumann, H.; Wagner, J.; Kiefer, R.; Müller, S. | Konferenzbeitrag |
1997 | Improved current-voltage characteristics of downstream plasma enhanced chemical vapor deposition SiNx deposited at low temperature by using He as a dilution gas Arps, M.; Marlowitz, A. | Zeitschriftenaufsatz |
1996 | Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W. | Konferenzbeitrag |