Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2012Entwicklung einer lichtbogengestützten PECVD-Technologie für die Synthese siliziumbasierter Schichtsysteme unter Atmosphärendruck
Rogler, Daniela
: Beyer, Eckhard (Betreuer); Neidhardt, Andreas (Gutachter); Kaskel, Stefan (Gutachter)
Dissertation
2005High-density ECR-plasma deposited silicon nitride films for applications in III/V-based compound semiconductor devices
Sah, R.E.; Mikulla, M.; Baumann, H.; Benkhelifa, F.; Quay, R.; Weimann, G.
Konferenzbeitrag
2005Passivation of III-V-based compound semiconductor devices using high-density plasma deposited silicon nitride films
Sah, R.E.; Mikulla, M.; Schneider, H.; Benkhelifa, F.; Dammann, M.; Quay, R.; Fleißner, J.; Walther, M.; Weimann, G.
Konferenzbeitrag
2002Advanced diffusion system for low contamination in-line rapid thermal processing of silicon solar cells
Biro, D.; Preu, R.; Schultz, O.; Peters, S.; Huljic, D.M.; Zickermann, D.; Schindler, R.; Ludemann, R.; Willeke, G.
Zeitschriftenaufsatz
2002Strengthening of ceramics by shot peening
Pfeiffer, W.; Frey, T.
Konferenzbeitrag, Zeitschriftenaufsatz
2000Analysis of HBT behavior after strong electrothermal stress
Palankovski, V.; Selberherr, S.; Quay, R.; Schultheis, R.
Konferenzbeitrag
1997ECR-plasma deposited oxygen-free SiN(x) films for low- and high-reflectivity coatings for GaAs based devices
Sah, R.E.; Weimar, U.; Baumann, H.; Wagner, J.; Kiefer, R.; Müller, S.
Konferenzbeitrag
1997Improved current-voltage characteristics of downstream plasma enhanced chemical vapor deposition SiNx deposited at low temperature by using He as a dilution gas
Arps, M.; Marlowitz, A.
Zeitschriftenaufsatz
1996Influence of SiNx passivation on the surface potential of GaInAs and AlInAs in HEMT layer structures
Arps, M.; Each, H.-G.; Passenberg, W.; Umbach, A.; Schlaak, W.
Konferenzbeitrag