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Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
2019SIMS depth profile analysis of tribological coatings on curved surfaces
Schiffmann, K.I.
Zeitschriftenaufsatz
2014Highly n-doped surfaces on n-type silicon wafers by laser-chemical processes
Linaschke, Dorit; Schilling, Niels; Dani, Ines; Klotzbach, Udo; Leyens, Christoph
Zeitschriftenaufsatz, Konferenzbeitrag
2014Simulation of AsH3 plasma immersion ion implantation into silicon
Burenkov, Alex; Lorenz, Jürgen; Spiegel, Yohann; Torregrosa, Frank
Konferenzbeitrag
2013Characterization of 31 nonperiodic layers of alternate SiO2/Nb2O5 on glass for optical filters by SIMS, XRR, and ellipsometry
Schiffmann, K.I.; Vergöhl, M.
Zeitschriftenaufsatz, Konferenzbeitrag
2012Precipitation of antimony implanted into silicon
Koffel, S.; Pichler, P.; Reading, M.A.; Berg, J. van den; Kheyrandish, H.; Hamm, S.; Lerch, W.; Pakfar, A.; Tavernier, C.
Zeitschriftenaufsatz, Konferenzbeitrag
2011Controlling the Mg doping profile in MOVPE-grown GaN/Al(0.2)Ga(0.8)N light-emitting diodes
Gutt, R.; Köhler, K.; Wiegert, J.; Kirste, L.; Passow, T.; Wagner, J.
Zeitschriftenaufsatz, Konferenzbeitrag
2010Bi2Te3, Sb2Te3 and Bi2Te3/Sb2Te3 - Superlattices created using the nanoalloying approach
Winkler, M.; König, J.D.; Buller, S.; Schürmann, U.; Kienle, L.; Bensch, W.; Böttner, H.
Konferenzbeitrag
2010Investigation of boron redistribution during silicidation in TiSi2 using atom probe tomography
Wedderhoff, K.; Kleint, C.; Shariq, A.; Teichert, S.
Abstract
2008SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes
Kirste, L.; Köhler, K.; Maier, M.; Kunzer, M.; Maier, M.; Wagner, J.
Konferenzbeitrag, Zeitschriftenaufsatz
2006Molecular beam epitaxy and doping of AlN at high growth temperatures
Boger, R.; Fiederle, M.; Kirste, L.; Maier, M.; Wagner, J.
Zeitschriftenaufsatz
2005Ion sputtering at grazing incidence for SIMS-analysis
Ullrich, M.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag, Zeitschriftenaufsatz
2004Ion sputtering at grazing incidence for SIMS-analysis
Ullrich, M.; Burenkov, A.; Ryssel, H.
Konferenzbeitrag
2003SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP
Maier, M.; Serries, D.; Geppert, T.; Köhler, K.; Güllich, H.; Herres, N.
Zeitschriftenaufsatz
2001SIMS depth profile analysis of wear resistant coatings on cutting tools and technical components
Willich, P.; Steinberg, C.
Zeitschriftenaufsatz
2000Fluorine contamination of PHEMTs during processing
Hülsmann, A.; Bronner, W.; Leuther, A.; Maier, M.; Weimann, G.
Konferenzbeitrag
2000Superior depth resolution of indium in (Al, In, Ga) N structures
Maier, M.; Müller, S.; Ramakrishnan, A.
Konferenzbeitrag
1998Distortion of SIMS Profiles due to Ion Beam Mixing: Shallow Arsenic Implants in Silicon
Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.; Biersack, J.P.
Zeitschriftenaufsatz
1998Laser/waveguide integration utilizing selective area MOMBE regrowth for photonic IC applications
Kunzel, H.; Ebert, S.; Gibis, R.; Harde, P.; Kaiser, R.; Kizuki, H.; Malchow, S.
Konferenzbeitrag
1998MOMBE grown GaInAsP (lambda g=1.05/1.15 mu m) waveguide for laser integrated photonic ICs
Kuenzel, H.; Gibis, R.; Kizuki, H.; Albrecht, P.; Ebert, S.; Harde, P.; Malchow, S.; Kaiser, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1998Post-growth Zn diffusion into InGaAs/InP in a LP-MOVPE reactor
Franke, D.; Reier, F.W.; Grote, N.
Konferenzbeitrag, Zeitschriftenaufsatz
1998Secondary ion mass spectrometry round-robin study for relative sensitivity factors in gallium arsenide
Homma, Y.; Tohjou, F.; Masamoto, A.; Shibata, M.; Shichi, H.; Yoshioka, Y.; Adachi, T.; Akai, T.; Gao, Y.; Hirano, M.; Hirano, T.; Ihara, A.; Kamejima, T.; Koyama, H.; Maier, M.; Matsumoto, S.; Matsunaga, H.; Nakamura, T.; Obata, T.; Okuno, K.; Sadayama, S.; Sasa, K.; Sasakawa, K.; Shimanuki, Y.; Suzuki, S.; Sykes, D.E.; Tachikawa, I.; Takase, H.; Tanigaki, T.; Tomita, M.; Tosho, H.; Kurosawa, S.
Zeitschriftenaufsatz
1997Distortion of SIMS profiles due to ion beam mixing
Saggio, M.; Montandon, C.; Burenkov, A.; Frey, L.; Pichler, P.
Konferenzbeitrag
1997Matrix effect in Cs+ attachment SIMS of III-V compound semiconductors
Maier, M.
Konferenzbeitrag
1997MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kuenzel, H.; Boettcher, J.; Harde, P.; Maessen, R.
Konferenzbeitrag, Zeitschriftenaufsatz
1996Material characterisation of SrS:Ce,Mn,Cl films
Troppenz, U.; Bilger, G.; Bohne, W.; Gers, G.; Kreissl, J.; Mauch, R.-H.; Sieber, K.; Velthaus, K.O.
Konferenzbeitrag
1995Basic studies of gallium Nitride growth on Sapphire by metalorganuc Chemical Vapor Deposition and optical properties of deposited layers
Niebuhr, R.; Bachem, K.; Dombrowski, K.; Maier, M.; Pletschen, W.; Kaufmann, U.
Zeitschriftenaufsatz
1995On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP
Roehle, H.; Schroeter-Janssen, H.; Harde, P.; Franke, D.
Konferenzbeitrag
1994Quantitative Analysis of W-C:H coatings by EPMA, RBS (ERD) and SIMS
Willich, P.; Wang, M.; Wittmaack, K.
Zeitschriftenaufsatz
1993Characterization of Hg1-xCdxTe heterostructures by thermoelectric measurements
Baars, J.; Brink, D.; Edwall, D.D.; Bubulac, L.O.
Zeitschriftenaufsatz
1993Compositional analysis of molecular beam epitaxy grown InyGa1-yAs/GaAs/AlxGa1-xAs quantum wells by determination of film thickness.
Maier, M.; Köhler, K.; Höpner, A.; As, D.J.
Zeitschriftenaufsatz
1993In situ SIMS monitoring for ion beam etching of III-V semiconductor compounds and metal contacts
Hensel, H.J.; Paraskevopoulos, A.; Mörl, L.; Hase, A.; Böttcher, J.
Konferenzbeitrag
1993P-dopant incorporation and influence on gain and damping behaviour in high-speed GaAs-based strained MQW lasers.
Ralston, J.D.; Weisser, S.; Esquivias, I.; Schönfelder, A.; Larkins, E.C.; Rosenzweig, J.; Tasker, P.J.; Maier, M.; Fleissner, J.
Zeitschriftenaufsatz
1993Phase analysis of interfacial carbon in GaAs grown by molecular beam epitaxy
Maier, M.; Köhler, K.
Konferenzbeitrag
1993Secondary ion mass spectroscopy -SIMS-
Bauser, H.; Hellwig, G.
Aufsatz in Buch
1991Heavy carbon doping in metal-organic vapor phase epitaxy -MOVPE- for GaAs using trimethylarsine
Neumann, G.; Bachem, K.H.; Lauterbach, T.; Maier, M.
Konferenzbeitrag
1991Simulation and experimental study of Zn outdiffusion during epitaxial growth of a double heterostructure bipolar transistor structure
Paraskevopoulos, A.; Weber, R.; Harde, P.; Schroeter-Janssen, H.
Konferenzbeitrag, Zeitschriftenaufsatz
1990Effects of Si incorporation and electrical activation of intersubband optical absorption in MBE-grown GaAs/AlGaAs multiple quantum well structures
Ralston, J.D.; Dischler, B.; Hiesinger, P.; Koidl, P.; Maier, M.; Ramsteiner, M.; Ennen, H.
Konferenzbeitrag
1989Beryllium and manganese diffusion in Ga0.47In0.53As during MBE-growth
Kunzel, H.; Bochnia, R.; Gibis, R.; Harde, P.; Passenberg, W.
Konferenzbeitrag
1989Properties of sequentially sputtered tungsten silicide thin films
Pletschen, W.; Maier, M.; Herres, N.; Seelmann-Eggebert, M.; Wagner, J.
Zeitschriftenaufsatz
1988Channeling of Si during implantation into GaAs for MESFETs
Maier, M.; Bachem, K.H.; Hornung, J.
Konferenzbeitrag
1987Depth profile analysis of hydrogenated carbon layers on silicon and germanium by XPS, AES and SIMS
Sander, P.; Wiedmann, L.; Benninghoven, A.; Sah, R.E.
Konferenzbeitrag
1987Depth profile analysis of hydrogenated carbon layers on silicon by x-ray photoelectron spectroscopy, Auger electron spectroscopy, electron energyloss spectroscopy, and secondary ion mass spectrometry
Sander, P.; Kaiser, U.; Altebockwinkel, M.; Wiedmann, L.; Benninghoven, A.; Sah, R.E.; Koidl, P.
Zeitschriftenaufsatz
1985Resistance of tantalum and columbium coatings to propellant gas erosion
Schlett, V.; Stuke, H.; Weiss, H.; Grabatin, H.
Zeitschriftenaufsatz