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| 1999 | Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M. | Zeitschriftenaufsatz |
| 1999 | Raman scattering observations and ab initio models of dicarbon complexes in AlAS
Davidson, B.R.; Newman, R.C.; Latham, C.D.; Jones, R.; Wagner, J.; Button, C.C.; Briddon, P.R. | Zeitschriftenaufsatz |
| 1998 | Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Bachem, K.H. | Zeitschriftenaufsatz |
| 1997 | Resonant Raman scattering in GaN/(AlGa)N single quantum wells
Behr, D.; Niebuhr, R.; Wagner, J.; Bachem, K.H.; Kaufmann, U. | Zeitschriftenaufsatz |
| 1997 | Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U. | Konferenzbeitrag |
| 1995 | Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering
Wagner, J.; Schmitz, J.; Fuchs, F.; Ralston, J.D.; Koidl, P.; Richards, D. | Zeitschriftenaufsatz |
| 1994 | Resonance effects in first- and second-order Raman scattering from AlAs
Wagner, J.; Fischer, A.; Braun, W.; Ploog, K. | Zeitschriftenaufsatz |
| 1994 | Resonance effects in Raman scattering from InAs/AlSb quantum wells.
Wagner, J.; Schmitz, J.; Ralston, J.D.; Koidl, P. | Zeitschriftenaufsatz |
| 1993 | Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs.
Fischer, A.; Ploog, K.; Wagner, J. | Zeitschriftenaufsatz |
| 1993 | Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scattering.
Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P.; Wagner, J. | Zeitschriftenaufsatz |
| 1992 | Excited defect energy states from temperature dependent ESR.
Kisielowski, C.; Maier, K.; Schneider, J.; Oding, V. | Zeitschriftenaufsatz |
| 1991 | Dopant incorporation and activation in highly Si doped GaAs layers grown by atomic layer molecular beam epitaxy
Silveira, J.P.; Briones, F.; Ramsteiner, M.; Wagner, J. | Konferenzbeitrag |
| 1991 | Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering.
Addinall, R.; Murray, R.; Newman, R.C.; Parker, S.D.; Williams, R.L.; Droopad, R.; Deoliveira, A.G.; Stradling, R.A.; Wagner, J. | Zeitschriftenaufsatz |
| 1991 | Raman spectroscopy for impurity characterization in III-V semiconductors.
Wagner, J. | Zeitschriftenaufsatz |
| 1991 | Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors.
Newman, R.C.; Koidl, P.; Wagner, J. | Zeitschriftenaufsatz |
| 1991 | Resonance effects in Raman scattering from polycrystalline diamond films.
Koidl, P.; Wagner, J.; Wild, C. | Zeitschriftenaufsatz |
| 1991 | Stark localization and resonance-induced delocalization of electrons in GaAs/AlAs superlattices.
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J. | Zeitschriftenaufsatz |
| 1990 | Implantation effects on resonant raman scattering in CdTe and Cd0.23Hg0.77Te.
Lusson, A.; Bruder, M.; Koidl, P.; Ramsteiner, M.; Wagner, J. | Zeitschriftenaufsatz |
| 1990 | Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivity.
Amirtharaj, P.M.; Dhar, N.K.; Baars, J.; Seelewind, H. | Zeitschriftenaufsatz |
| 1989 | The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and raman scattering.
Murray, R.; Newman, R.C.; Sangster, M.J.L.; Beall, R.B.; Harris, J.J.; Wright, P.J.; Ramsteiner, M.; Wagner, J. | Zeitschriftenaufsatz |
| 1989 | Hall effects, DLTS and optical investigations on the intrinsic 78/203 meV acceptor in GaAs.
Roos, G.; Schöner, A.; Pensil, G.; Krambrock, K.; Meyer, B.; Spaeth, J.M.; Wagner, J. | Zeitschriftenaufsatz |
| 1989 | Interference effects in the Raman scattering intensity from thin films.
Ramsteiner, M.; Wagner, J.; Wild, C. | Zeitschriftenaufsatz |
| 1989 | Optical spectroscopy of impurity levels in GaAs
Wagner, J. | Zeitschriftenaufsatz |
| 1989 | Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy.
Ramsteiner, M.; Wagner, J. | Zeitschriftenaufsatz |
| 1989 | Raman spectroscopic study of Si local vibrational modes in GaAs.
Ramsteiner, M.; Murray, R.; Newman, R.C.; Wagner, J. | Zeitschriftenaufsatz |
| 1988 | Composition dependence of longitudinal optical phonon modes in Cd(x)Hg(1-x)Te with 0.5 equal or smaller than x equal or smaller than 1
Lusson, A.; Wagner, J. | Zeitschriftenaufsatz |
| 1988 | Damage assessment of low-dose Si-implanted GaAs by Raman spectroscopy.
Wagner, J. | Zeitschriftenaufsatz |
| 1988 | Quantitative optical analysis of residual shallow acceptors in semi-insulating GaAs
Löhnert, K.; Jantz, W.; Ramsteiner, M.; Wagner, J. | Konferenzbeitrag |
| 1988 | Raman scattering of amorphous carbon/semiconductor interface layers.
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C. | Zeitschriftenaufsatz |
| 1988 | Raman scattering of residual acceptors in GaAs and its application to optical topography
Windscheif, J.; Wagner, J. | Konferenzbeitrag |
| 1988 | Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J. | Zeitschriftenaufsatz |
| 1988 | Raman study of Si plus -implanted GaAs.
Fritzsche, C.; Wagner, J. | Zeitschriftenaufsatz |
| 1987 | Characterization of a-C - H films by raman and luminescence spectroscopy
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C. | Konferenzbeitrag |
| 1987 | Defect induced raman transition in non-stoichiometric Ga-rich GaAs - a pseudolocalized vibrational mode of the GaAs antisite?
Ramsteiner, M.; Newmann, R.C.; Wagner, J. | Zeitschriftenaufsatz |
| 1987 | Effect of rapid thermal annealing on ion-implanted and neutrontransmutation doped GaAs
Ramsteiner, M.; Haydl, W.H.; Wagner, J. | Zeitschriftenaufsatz |
| 1987 | Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs
Newmann, R.C.; Maguire, J.; Dischler, B.; Seelewind, H.; Wagner, J. | Konferenzbeitrag |
| 1987 | Ground-state splitting of the 78-meV double acceptor in GaAs
Ramsteiner, M.; Wagner, J. | Zeitschriftenaufsatz |
| 1987 | Optical characterization of heavily doped silicon
Wagner, J. | Zeitschriftenaufsatz |
| 1987 | Raman scattering from extremely thin hard amorphous carbon films
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C. | Zeitschriftenaufsatz |
| 1987 | Raman scattering study of implantation damage and annealing in GaAs
Ramsteiner, M.; Wagner, J. | Konferenzbeitrag |
| 1987 | Raman scattering study of low dose Si+-/implanted GaAs used for metal-semiconductor field-effect transistor fabrication
Jantz, W.; Wagner, J.; Frey, T. | Zeitschriftenaufsatz |
| 1987 | Raman spectroscopic study of point defects in bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J. | Konferenzbeitrag |
| 1987 | Resonant two-phonon raman scattering in GaAs. A sensitive probe for implantation damage and annealing
Wagner, J.; Hoffmann, C. | Zeitschriftenaufsatz |
| 1986 | Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs
Kaufmann, U.; Seelewind, H.; Wagner, J. | Zeitschriftenaufsatz |
| 1985 | Raman scattering studies in phosphorus implanted and laser annealed boron doped Si
Contreras, G.; Cardona, M.; Axmann, A. | Zeitschriftenaufsatz |
| 1984 | Raman scattering in ultra heavily doped Si and Ge - The dependence on free carrier and substitutional dopant densities
Axmann, A.; Compaan, A.; Contreras, G.; Cardona, M. | Konferenzbeitrag |
| 1983 | Phonon softening in ultra heavily doped Si and Ge.
Cardona, M.; Axmann, A.; Compaan, A.; Contreras, G. | Zeitschriftenaufsatz |
| 1983 | Raman studies of the P local mode vibration in P implanted, laser annealed Ge.
Axmann, A.; Contreras, G.; Compaan, A. | Zeitschriftenaufsatz |