Fraunhofer-Gesellschaft

Publica

Hier finden Sie wissenschaftliche Publikationen aus den Fraunhofer-Instituten.
1999Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering
Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M.
Zeitschriftenaufsatz
1999Raman scattering observations and ab initio models of dicarbon complexes in AlAS
Davidson, B.R.; Newman, R.C.; Latham, C.D.; Jones, R.; Wagner, J.; Button, C.C.; Briddon, P.R.
Zeitschriftenaufsatz
1998Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering
Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Bachem, K.H.
Zeitschriftenaufsatz
1997Resonant Raman scattering in GaN/(AlGa)N single quantum wells
Behr, D.; Niebuhr, R.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Zeitschriftenaufsatz
1997Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures
Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U.
Konferenzbeitrag
1995Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering
Wagner, J.; Schmitz, J.; Fuchs, F.; Ralston, J.D.; Koidl, P.; Richards, D.
Zeitschriftenaufsatz
1994Resonance effects in first- and second-order Raman scattering from AlAs
Wagner, J.; Fischer, A.; Braun, W.; Ploog, K.
Zeitschriftenaufsatz
1994Resonance effects in Raman scattering from InAs/AlSb quantum wells.
Wagner, J.; Schmitz, J.; Ralston, J.D.; Koidl, P.
Zeitschriftenaufsatz
1993Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs.
Fischer, A.; Ploog, K.; Wagner, J.
Zeitschriftenaufsatz
1993Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scattering.
Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P.; Wagner, J.
Zeitschriftenaufsatz
1992Excited defect energy states from temperature dependent ESR.
Kisielowski, C.; Maier, K.; Schneider, J.; Oding, V.
Zeitschriftenaufsatz
1991Dopant incorporation and activation in highly Si doped GaAs layers grown by atomic layer molecular beam epitaxy
Silveira, J.P.; Briones, F.; Ramsteiner, M.; Wagner, J.
Konferenzbeitrag
1991Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering.
Addinall, R.; Murray, R.; Newman, R.C.; Parker, S.D.; Williams, R.L.; Droopad, R.; Deoliveira, A.G.; Stradling, R.A.; Wagner, J.
Zeitschriftenaufsatz
1991Raman spectroscopy for impurity characterization in III-V semiconductors.
Wagner, J.
Zeitschriftenaufsatz
1991Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors.
Newman, R.C.; Koidl, P.; Wagner, J.
Zeitschriftenaufsatz
1991Resonance effects in Raman scattering from polycrystalline diamond films.
Koidl, P.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1991Stark localization and resonance-induced delocalization of electrons in GaAs/AlAs superlattices.
Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J.
Zeitschriftenaufsatz
1990Implantation effects on resonant raman scattering in CdTe and Cd0.23Hg0.77Te.
Lusson, A.; Bruder, M.; Koidl, P.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1990Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivity.
Amirtharaj, P.M.; Dhar, N.K.; Baars, J.; Seelewind, H.
Zeitschriftenaufsatz
1989The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and raman scattering.
Murray, R.; Newman, R.C.; Sangster, M.J.L.; Beall, R.B.; Harris, J.J.; Wright, P.J.; Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1989Hall effects, DLTS and optical investigations on the intrinsic 78/203 meV acceptor in GaAs.
Roos, G.; Schöner, A.; Pensil, G.; Krambrock, K.; Meyer, B.; Spaeth, J.M.; Wagner, J.
Zeitschriftenaufsatz
1989Interference effects in the Raman scattering intensity from thin films.
Ramsteiner, M.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1989Optical spectroscopy of impurity levels in GaAs
Wagner, J.
Zeitschriftenaufsatz
1989Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy.
Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1989Raman spectroscopic study of Si local vibrational modes in GaAs.
Ramsteiner, M.; Murray, R.; Newman, R.C.; Wagner, J.
Zeitschriftenaufsatz
1988Composition dependence of longitudinal optical phonon modes in Cd(x)Hg(1-x)Te with 0.5 equal or smaller than x equal or smaller than 1
Lusson, A.; Wagner, J.
Zeitschriftenaufsatz
1988Damage assessment of low-dose Si-implanted GaAs by Raman spectroscopy.
Wagner, J.
Zeitschriftenaufsatz
1988Quantitative optical analysis of residual shallow acceptors in semi-insulating GaAs
Löhnert, K.; Jantz, W.; Ramsteiner, M.; Wagner, J.
Konferenzbeitrag
1988Raman scattering of amorphous carbon/semiconductor interface layers.
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1988Raman scattering of residual acceptors in GaAs and its application to optical topography
Windscheif, J.; Wagner, J.
Konferenzbeitrag
1988Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J.
Zeitschriftenaufsatz
1988Raman study of Si plus -implanted GaAs.
Fritzsche, C.; Wagner, J.
Zeitschriftenaufsatz
1987Characterization of a-C - H films by raman and luminescence spectroscopy
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Konferenzbeitrag
1987Defect induced raman transition in non-stoichiometric Ga-rich GaAs - a pseudolocalized vibrational mode of the GaAs antisite?
Ramsteiner, M.; Newmann, R.C.; Wagner, J.
Zeitschriftenaufsatz
1987Effect of rapid thermal annealing on ion-implanted and neutrontransmutation doped GaAs
Ramsteiner, M.; Haydl, W.H.; Wagner, J.
Zeitschriftenaufsatz
1987Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs
Newmann, R.C.; Maguire, J.; Dischler, B.; Seelewind, H.; Wagner, J.
Konferenzbeitrag
1987Ground-state splitting of the 78-meV double acceptor in GaAs
Ramsteiner, M.; Wagner, J.
Zeitschriftenaufsatz
1987Optical characterization of heavily doped silicon
Wagner, J.
Zeitschriftenaufsatz
1987Raman scattering from extremely thin hard amorphous carbon films
Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C.
Zeitschriftenaufsatz
1987Raman scattering study of implantation damage and annealing in GaAs
Ramsteiner, M.; Wagner, J.
Konferenzbeitrag
1987Raman scattering study of low dose Si+-/implanted GaAs used for metal-semiconductor field-effect transistor fabrication
Jantz, W.; Wagner, J.; Frey, T.
Zeitschriftenaufsatz
1987Raman spectroscopic study of point defects in bulk GaAs.
Ramsteiner, M.; Seelewind, H.; Wagner, J.
Konferenzbeitrag
1987Resonant two-phonon raman scattering in GaAs. A sensitive probe for implantation damage and annealing
Wagner, J.; Hoffmann, C.
Zeitschriftenaufsatz
1986Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs
Kaufmann, U.; Seelewind, H.; Wagner, J.
Zeitschriftenaufsatz
1985Raman scattering studies in phosphorus implanted and laser annealed boron doped Si
Contreras, G.; Cardona, M.; Axmann, A.
Zeitschriftenaufsatz
1984Raman scattering in ultra heavily doped Si and Ge - The dependence on free carrier and substitutional dopant densities
Axmann, A.; Compaan, A.; Contreras, G.; Cardona, M.
Konferenzbeitrag
1983Phonon softening in ultra heavily doped Si and Ge.
Cardona, M.; Axmann, A.; Compaan, A.; Contreras, G.
Zeitschriftenaufsatz
1983Raman studies of the P local mode vibration in P implanted, laser annealed Ge.
Axmann, A.; Contreras, G.; Compaan, A.
Zeitschriftenaufsatz