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1999 | Effect of strain and associated piezoelectric fields in InGaN/GaN quantum wells probed by resonant Raman scattering Wagner, J.; Ramakrishnan, A.; Obloh, H.; Maier, M. | Zeitschriftenaufsatz |
1999 | Raman scattering observations and ab initio models of dicarbon complexes in AlAS Davidson, B.R.; Newman, R.C.; Latham, C.D.; Jones, R.; Wagner, J.; Button, C.C.; Briddon, P.R. | Zeitschriftenaufsatz |
1998 | Evidence for compositional inhomogeneity in low In content (InGa)N obtained by resonant Raman scattering Behr, D.; Wagner, J.; Ramakrishnan, A.; Obloh, H.; Bachem, K.H. | Zeitschriftenaufsatz |
1997 | Resonant Raman scattering in GaN/(AlGa)N single quantum wells Behr, D.; Niebuhr, R.; Wagner, J.; Bachem, K.H.; Kaufmann, U. | Zeitschriftenaufsatz |
1997 | Resonant Raman scattering in GaN/Al(0.15)Ga(0.85)N and In(y)Ga(1-y)N/GaN/Al(x)Ga(1-x) heterostructures Behr, D.; Niebuhr, R.; Obloh, H.; Wagner, J.; Bachem, K.H.; Kaufmann, U. | Konferenzbeitrag |
1995 | Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering Wagner, J.; Schmitz, J.; Fuchs, F.; Ralston, J.D.; Koidl, P.; Richards, D. | Zeitschriftenaufsatz |
1994 | Resonance effects in first- and second-order Raman scattering from AlAs Wagner, J.; Fischer, A.; Braun, W.; Ploog, K. | Zeitschriftenaufsatz |
1994 | Resonance effects in Raman scattering from InAs/AlSb quantum wells. Wagner, J.; Schmitz, J.; Ralston, J.D.; Koidl, P. | Zeitschriftenaufsatz |
1993 | Resonant Raman scattering and photoluminescence at the E0 band gap of carbon-doped AlAs. Fischer, A.; Ploog, K.; Wagner, J. | Zeitschriftenaufsatz |
1993 | Surface Fermi level pinning in epitaxial InSb studied by electric-field-induced Raman scattering. Alvarez, A.-L.; Schmitz, J.; Ralston, J.D.; Koidl, P.; Wagner, J. | Zeitschriftenaufsatz |
1992 | Excited defect energy states from temperature dependent ESR. Kisielowski, C.; Maier, K.; Schneider, J.; Oding, V. | Zeitschriftenaufsatz |
1991 | Dopant incorporation and activation in highly Si doped GaAs layers grown by atomic layer molecular beam epitaxy Silveira, J.P.; Briones, F.; Ramsteiner, M.; Wagner, J. | Konferenzbeitrag |
1991 | Local vibrational mode spectroscopy of Si donors and Be acceptors in MBE InAs and InSb studied by infrared absorption and Raman scattering. Addinall, R.; Murray, R.; Newman, R.C.; Parker, S.D.; Williams, R.L.; Droopad, R.; Deoliveira, A.G.; Stradling, R.A.; Wagner, J. | Zeitschriftenaufsatz |
1991 | Raman spectroscopy for impurity characterization in III-V semiconductors. Wagner, J. | Zeitschriftenaufsatz |
1991 | Resonance effects in Raman scattering by dopant-induced local vibrational modes in III-V semiconductors. Newman, R.C.; Koidl, P.; Wagner, J. | Zeitschriftenaufsatz |
1991 | Resonance effects in Raman scattering from polycrystalline diamond films. Koidl, P.; Wagner, J.; Wild, C. | Zeitschriftenaufsatz |
1991 | Stark localization and resonance-induced delocalization of electrons in GaAs/AlAs superlattices. Fujiwara, K.; Ploog, K.; Schneider, H.; Wagner, J. | Zeitschriftenaufsatz |
1990 | Implantation effects on resonant raman scattering in CdTe and Cd0.23Hg0.77Te. Lusson, A.; Bruder, M.; Koidl, P.; Ramsteiner, M.; Wagner, J. | Zeitschriftenaufsatz |
1990 | Investigation of phonons in HgCdTe using Raman scattering and far-infrared reflectivity. Amirtharaj, P.M.; Dhar, N.K.; Baars, J.; Seelewind, H. | Zeitschriftenaufsatz |
1989 | The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and raman scattering. Murray, R.; Newman, R.C.; Sangster, M.J.L.; Beall, R.B.; Harris, J.J.; Wright, P.J.; Ramsteiner, M.; Wagner, J. | Zeitschriftenaufsatz |
1989 | Hall effects, DLTS and optical investigations on the intrinsic 78/203 meV acceptor in GaAs. Roos, G.; Schöner, A.; Pensil, G.; Krambrock, K.; Meyer, B.; Spaeth, J.M.; Wagner, J. | Zeitschriftenaufsatz |
1989 | Interference effects in the Raman scattering intensity from thin films. Ramsteiner, M.; Wagner, J.; Wild, C. | Zeitschriftenaufsatz |
1989 | Optical spectroscopy of impurity levels in GaAs Wagner, J. | Zeitschriftenaufsatz |
1989 | Raman spectroscopic assessment of Si and Be local vibrational modes in GaAs layers grown by molecular beam epitaxy. Ramsteiner, M.; Wagner, J. | Zeitschriftenaufsatz |
1989 | Raman spectroscopic study of Si local vibrational modes in GaAs. Ramsteiner, M.; Murray, R.; Newman, R.C.; Wagner, J. | Zeitschriftenaufsatz |
1988 | Composition dependence of longitudinal optical phonon modes in Cd(x)Hg(1-x)Te with 0.5 equal or smaller than x equal or smaller than 1 Lusson, A.; Wagner, J. | Zeitschriftenaufsatz |
1988 | Damage assessment of low-dose Si-implanted GaAs by Raman spectroscopy. Wagner, J. | Zeitschriftenaufsatz |
1988 | Quantitative optical analysis of residual shallow acceptors in semi-insulating GaAs Löhnert, K.; Jantz, W.; Ramsteiner, M.; Wagner, J. | Konferenzbeitrag |
1988 | Raman scattering of amorphous carbon/semiconductor interface layers. Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C. | Zeitschriftenaufsatz |
1988 | Raman scattering of residual acceptors in GaAs and its application to optical topography Windscheif, J.; Wagner, J. | Konferenzbeitrag |
1988 | Raman spectroscopic study of residual acceptors in semi-insulating bulk GaAs. Ramsteiner, M.; Seelewind, H.; Wagner, J. | Zeitschriftenaufsatz |
1988 | Raman study of Si plus -implanted GaAs. Fritzsche, C.; Wagner, J. | Zeitschriftenaufsatz |
1987 | Characterization of a-C - H films by raman and luminescence spectroscopy Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C. | Konferenzbeitrag |
1987 | Defect induced raman transition in non-stoichiometric Ga-rich GaAs - a pseudolocalized vibrational mode of the GaAs antisite? Ramsteiner, M.; Newmann, R.C.; Wagner, J. | Zeitschriftenaufsatz |
1987 | Effect of rapid thermal annealing on ion-implanted and neutrontransmutation doped GaAs Ramsteiner, M.; Haydl, W.H.; Wagner, J. | Zeitschriftenaufsatz |
1987 | Electronic raman scattering of the 78 meV/203 meV double acceptor in GaAs Newmann, R.C.; Maguire, J.; Dischler, B.; Seelewind, H.; Wagner, J. | Konferenzbeitrag |
1987 | Ground-state splitting of the 78-meV double acceptor in GaAs Ramsteiner, M.; Wagner, J. | Zeitschriftenaufsatz |
1987 | Optical characterization of heavily doped silicon Wagner, J. | Zeitschriftenaufsatz |
1987 | Raman scattering from extremely thin hard amorphous carbon films Koidl, P.; Ramsteiner, M.; Wagner, J.; Wild, C. | Zeitschriftenaufsatz |
1987 | Raman scattering study of implantation damage and annealing in GaAs Ramsteiner, M.; Wagner, J. | Konferenzbeitrag |
1987 | Raman scattering study of low dose Si+-/implanted GaAs used for metal-semiconductor field-effect transistor fabrication Jantz, W.; Wagner, J.; Frey, T. | Zeitschriftenaufsatz |
1987 | Raman spectroscopic study of point defects in bulk GaAs. Ramsteiner, M.; Seelewind, H.; Wagner, J. | Konferenzbeitrag |
1987 | Resonant two-phonon raman scattering in GaAs. A sensitive probe for implantation damage and annealing Wagner, J.; Hoffmann, C. | Zeitschriftenaufsatz |
1986 | Raman scattering as a quantitative tool for residual acceptor assessment in semi-insulating GaAs Kaufmann, U.; Seelewind, H.; Wagner, J. | Zeitschriftenaufsatz |
1985 | Raman scattering studies in phosphorus implanted and laser annealed boron doped Si Contreras, G.; Cardona, M.; Axmann, A. | Zeitschriftenaufsatz |
1984 | Raman scattering in ultra heavily doped Si and Ge - The dependence on free carrier and substitutional dopant densities Axmann, A.; Compaan, A.; Contreras, G.; Cardona, M. | Konferenzbeitrag |
1983 | Phonon softening in ultra heavily doped Si and Ge. Cardona, M.; Axmann, A.; Compaan, A.; Contreras, G. | Zeitschriftenaufsatz |
1983 | Raman studies of the P local mode vibration in P implanted, laser annealed Ge. Axmann, A.; Contreras, G.; Compaan, A. | Zeitschriftenaufsatz |